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    2SC2873 Price and Stock

    Toshiba America Electronic Components 2SC2873-Y(TE12L,ZC

    PB-F POWER TRANSISTOR PW-MINI MO
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    DigiKey 2SC2873-Y(TE12L,ZC Cut Tape 1,755 1
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    2SC2873-Y(TE12L,ZC Digi-Reel 1,755 1
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    2SC2873-Y(TE12L,ZC Reel 1,000 1,000
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    Mouser Electronics 2SC2873-Y(TE12L,ZC 6,895
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    Verical 2SC2873-Y(TE12L,ZC 6,000 6,000
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    2SC2873-Y(TE12L,ZC 900 79
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    Arrow Electronics 2SC2873-Y(TE12L,ZC 6,000 16 Weeks 6,000
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    Quest Components 2SC2873-Y(TE12L,ZC 892
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    2SC2873-Y(TE12L,ZC 892
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    Chip1Stop 2SC2873-Y(TE12L,ZC Cut Tape 900
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    EBV Elektronik 2SC2873-Y(TE12L,ZC 17 Weeks 1,000
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    Micro Commercial Components 2SC2873-O-TP

    Interface
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    DigiKey 2SC2873-O-TP Bulk 1,000
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    Mouser Electronics 2SC2873-O-TP
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    Micro Commercial Components 2SC2873-Y-TP

    Interface
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    DigiKey 2SC2873-Y-TP Bulk 1,000
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    Mouser Electronics 2SC2873-Y-TP 2,456
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    Toshiba America Electronic Components 2SC2873-Y(TE12LZC

    Trans GP BJT NPN 50V 2A 4-Pin PW-Mini - Tape and Reel (Alt: 2SC2873-Y(TE12L,ZC)
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    Avnet Americas 2SC2873-Y(TE12LZC Reel 4,000 12 Weeks 1,000
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    Avnet Asia 2SC2873-Y(TE12LZC 32 Weeks 1,000
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    Toshiba America Electronic Components 2SC2873-Y(TE12L,F)

    Trans GP BJT NPN 50V 2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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    Verical 2SC2873-Y(TE12L,F) 5,927 100
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    Quest Components 2SC2873-Y(TE12L,F) 4,741
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    2SC2873-Y(TE12L,F) 4,741
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    Find more 2SC2873 price and stock on Findchips.com

    2SC2873 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2873 Kexin Silicon NPN Epitaxial Planar Type Original PDF
    2SC2873 Toshiba NPN Transistor Original PDF
    2SC2873 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC2873 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2873 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2873 Unknown Scan PDF
    2SC2873 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2873 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2873 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2873 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2873 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC2873 Toshiba Silicon NPN transistor for power amplifier and power switching applications Scan PDF
    2SC2873 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SC2873 Toshiba SOT-89 Transistors Scan PDF
    2SC2873 Zetex Semiconductors High Gain Transistors / High Performance Switching Transistors / Darlingtons Scan PDF
    2SC2873O Toshiba 2SC2873 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC2873-O Toshiba 2SC2873 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC2873O Toshiba Silicon NPN Epitaxial Transistor Scan PDF
    2SC2873OTE12L Toshiba 2SC2873 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    2SC2873OTE12R Toshiba 2SC2873 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

    2SC2873 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd marking MY

    Abstract: marking MY 2SC287 2SC2873 MY SMD MARKING
    Text: Transistors SMD Type Silicon PNP Epitaxial Type 2SC2873 Features Low saturation voltage: VCE sat = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 s (typ.). Small flat package. PC = 1.0 to 2.0 W Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		PDF 2SC2873 smd marking MY marking MY 2SC287 2SC2873 MY SMD MARKING

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon NPN Epitaxial Type 2SC2873 Features Low saturation voltage: VCE sat = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 s (typ.). Small flat package. PC = 1.0 to 2.0 W (Mounted on Ceramic Substrate) Absolute Maximum Ratings Ta = 25


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2873 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2873 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) •


    Original     		PDF 2SC2873 2SA1213

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage


    Original     		PDF OT-89-3L OT-89-3L 2SA1213 2SC2873

    Untitled

    Abstract: No abstract text available
    Text: 2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SC2873 2SA1213

    Untitled

    Abstract: No abstract text available
    Text: 2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High speed switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC2873 2SA1213

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC2873 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 2 A Collector-base voltage


    Original     		PDF OT-89 2SC2873 OT-89 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage


    Original     		PDF OT-89-3L OT-89-3L 2SA1213 2SC2873 -10mA -500mA -50mA

    2SC2873

    Abstract: 2SA1213 Transistor 2SC2873
    Text: 2SC2873 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High speed switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC2873 2SA1213 2SC2873 2SA1213 Transistor 2SC2873

    Untitled

    Abstract: No abstract text available
    Text: 2SC2873 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)2 Absolute Max. Power Diss. (W)1 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.70 h(FE) Max. Current gain.240


    Original     		PDF 2SC2873 Freq120MÃ StyleSOT-89 Code3-12

    2SC2873

    Abstract: 2SA1213 IC2030
    Text: 2SC2873 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2873 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) •


    Original     		PDF 2SC2873 2SA1213 SC-62 20070701-JA 2SC2873 2SA1213 IC2030

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT- 89-3L 2SC2873 TRANSISTOR NPN 1. BASE FEATURES  Small Flat Package  High Speed Switching Time  Low Collector-emitter saturation voltage  Complementary to 2SA1213


    Original     		PDF OT-89-3L 89-3L 2SC2873 2SA1213

    2SA1213

    Abstract: 2SC2873
    Text: 2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SC2873 2SA1213 2SA1213 2SC2873

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1213 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1213 2SC2873

    Untitled

    Abstract: No abstract text available
    Text: 2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SC2873 2SA1213 SC-62

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC2873 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 2 A ICM: Collector-base voltage


    Original     		PDF OT-89 2SC2873 OT-89 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT- 89-3L 2SC2873 TRANSISTOR NPN 1. BASE FEATURES  Small Flat Package  High Speed Switching Time  Low Collector-emitter saturation voltage  Complementary to 2SA1213


    Original     		PDF OT-89-3L 89-3L 2SC2873 2SA1213

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC2873 Unit in tmn POWER AMPLIFIER APPLICATIONS. 1.6MAX. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. r a Q4±Û05 - FEATURES: . Low Saturation Voltage : VCE sat =0.5V(Max.) (Ic-IA) + Q08 Q45-Û05 . High Speed Switching Time : tstg=l.Oa s (Typ.)


    OCR Scan     		PDF 2SC2873 2SA1213 4-Q05 50BASE--

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIALTYPE PCT PROCESS 2SC2873 Unit in mm POWER AMPLIFIER APPLICATIONS. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. 1.6 MAX. Q4±a05 FEATURES: . Low Saturation Voltage •• vCE(sat)=0.5V(Max.) u (IC=1A) +aoa a45~ao5 . High Speed Switching Time : tstg=1.0/<s(Typ.)


    OCR Scan     		PDF 2SC2873 2SA1213 250mm2

    2SB600 NEC

    Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
    Text: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .


    OCR Scan     		PDF 2SD879 2SC3266 2SD965 2SD1624 2SC2873 2SD1119 2SD1963 2SD1692 2SD1233 2SC4339 2SB600 NEC 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944

    2SC2873Y

    Abstract: Transistor 2SC2873 2sc2873
    Text: 2SC2873 2SC2873Y SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * LOW SATURATION VOLTAGE. * FAST SW ITCHING. * COMPLEMENTARY TYPE - 2SA1213. PARTMARKING DETAILS - 2SC2873 - M Y 2SC2873Y - M O ABSOLUTE MAXIMUM RATINGS 2SC2873 2SC2873Y SYMBOL PARAMETER


    OCR Scan     		PDF 2SA1213. 2SC2873 2SC2873Y 2SC2873Y 100nA 500mA, Transistor 2SC2873

    sl 1008 transistor

    Abstract: 2SA1213 2SC2873
    Text: TO SH IB A 2SC2873 T O S H IB A T R A N S IS T O R SILICO N NPN E P IT A X IA L T Y P E PCT PRO CESS 2SC2873 PO W ER A M P LIFIE R A P P LIC A T IO N S PO W ER SW ITC H IN G A P P LIC A T IO N S Low Saturation V oltage : V q e (sat) = 0.5V (Max.) (Iq = 1A)


    OCR Scan     		PDF 2SC2873 2SA1213 250mm2x0 sl 1008 transistor 2SA1213 2SC2873

    D1647

    Abstract: sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645
    Text: - 246 - £ m *t % Marmi. T ype No. 2SD 1621 ^ H n e SANYO * M £ T O SHIBA □ P 'Ss m. NEC 2SD1898 2SC4357 2SC4672 2SD2403 2SD1119 2SC3438 2SD1834 ¥ 2SC2873 2SD 1624 / ¥ 2SC4541 2SD 1625 $ ^ 2SD 1631 2SD 1632 2SD 1633 ^ 2SD 1634 2SD 1636 2S0 1637 2SD1368


    OCR Scan     		PDF 2SD1621 2SD1622 2SD1623 2SD1624 2SD1625 2SD1626 2SD1627 2SD1628 2SD1629 2SD1630 D1647 sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645

    2SC2873

    Abstract: 2SA1213
    Text: TOSHIBA 2SC2873 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2873 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. Low Saturation Voltage : V q ^ ( s a t ) “ 0.5V (Max.) (Ic = l A) High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		PDF 2SC2873 2SA1213 250mm2x0 2SC2873 2SA1213