2SA1241 Search Results

2SA1241

Abstract: a1241 A 1241 transistor 2sa1241 1241 transistor
Contextual Info: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 241 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1241) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (Iç;= -1A )

transistor a1241

Abstract: a1241 transistor 2sa1241 2SA1241 2SC3076 IC 1029
Contextual Info: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)

transistor a1241

Abstract: a1241 a1241 semiconductor 2SA1241 2SC3076
Contextual Info: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)

2SA1241

Abstract: 2SC3076
Contextual Info: 2SA1241 TOSHIBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VGE(sat) = -0 .5 V (Max.) (IC = -1 A ) Excellent Switching Time : tgtg = 1.0 /is (Typ.)

transistor a1241

Abstract: a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor
Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

transistor a1241

Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076
Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

2N640S

Abstract: B0636 B081S 2SA1241Y 2SA1241-Y B0378 B0526-5
Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SK3267 2SB1201 2SA1241Y SMl3550 SMl3553 SMl3576 SMl3579 SMl69502 SMl69510 ~UI 25 30 35 40 RQRr,'} SMl69610 SMl3502 SMl3506 SMl3510 SMl3514 2N2881 2N320S SOT3553 SOT3553 SOT3553 B0378 B0378 B0378 B0636

Contextual Info: T O SH IB A 2SA1241 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : V cE (sat) = -0 .5 V (Max.) (IC = - 1 A ) Excellent Switching Time : tstg = 1.0 jl/.s (Typ.)

S1854

Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686

transistor a1241

Abstract: a1241 transistor a1241 datasheet 2SA1241 2SC3076 a1241 semiconductor a124* transistor A12-41
Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · Excellent switching time: tstg = 1.0 µs (typ.)

C3076

Abstract: 2SC3076 2SA1241
Contextual Info: 2SC3076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。

transistor a1241

Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41
Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)

2sa1229

Abstract: 2SA1215 2SA1227 SA1244 2SA1224 2SC3115 2sC3L 2SA1216 2SA1220 2SA1220A
Contextual Info: - 26 - Ta=25<C. *EPfäTc=25‘0 m 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 % it if > * r y -vyà-y sn. H M H M B U 2SA1223 2SA1224 2SA1225 2SA1226 0CA 1oon to m 66 r B M B M 2SA1227A 2SA1229 2SA1232 2SA1235 2SA1237 2SA1238 2SA1239 2SA1240 2SA1241 2SA1242

Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)

Contextual Info: T O SH IB A 2SA1241 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS K A 1 Jd 1 POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in mm & 8 MAX. . 5 3 4 0 .8 • 0.6 MAX. Low Collector S atu ratio n V oltage • V cE (sat) = -0 .5 V (Max.) (IC = - 1A)

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1241 POWER AMPLIFIER APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. S8M AX. o FEATURES : * . Low Collector Saturation Voltage : VcE sat =-0.5V (Max.) (Ic=-1A) 1 . Excellent Switching Time : tstg=1.0/is (Typ.) . Complementary to 2SC3076

Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

Contextual Info: 2SA1241 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SW ITCHIN G APPLICATIONS. • • • Low Collector Saturation Voltage : VCE(sat)= —0.5V (Max.) (IC = —1A) Excellent Switching Time : tgt,g= 1.0//S (Typ.)

A1241

Abstract: 2SA1241 a1241 pnp 2SC3076
Contextual Info: 2SA1241 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1241 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)

a1241

Abstract: a1241 pnp 2SA1241 A12-41 2SC3076
Contextual Info: 2SA1241 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1241 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)

a1241

Abstract: 2SA1241 a1241 pnp
Contextual Info: 2SA1241 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1241 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)

Contextual Info: 2SC3076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。

2sc3076

Abstract: V7040
Contextual Info: 2SC3076 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. F EATURES : . L o w Collector Saturation Voltage : v C E s a t = 0 - 5V (Max.) (Ic=lA) . Excellent Switching Time : ts tg= l-0,us (Typ.) . C omplementary to 2SA1241

transistor a1241

Abstract: A1241 2SA1241 2SC3076 2SA124
Contextual Info: 2SA1241 TOSHIBA 2 S A 1 241 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SW ITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 /us (Typ.)