2SA1242 Search Results

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Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1242 STROBO FLASH APPLICATIONS. Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 6.8 MAX. FEATURES: . hFE=100~ 320 VCe =-2V, Ic =-0.5A . hFE=70(Min.) (Vc e =-2V, Ic=-4A) . Low Collector Saturation Voltage : VcE(sat)=~l-OV(Max.) (Ic=-4A, Ib =-0.1A)

2SA1242

Abstract: A1242
Contextual Info: 2SA1242 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1242 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE の直線性が良好です。 : hFE (1) = 100~320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (最小) (VCE = −2 V, IC = −4 A)

A1242

Abstract: 2SA1242 transistor A1242
Contextual Info: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)

Contextual Info: 2SA1242 TOSHIBA 2 S A 1 242 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS MEDIUM POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vc e = -2 V , IQ = -0 .5 A) hFE = 70 (Min.) (VCE = -2 V , IC = -4 A ) Low Collector Saturation Voltage

transistor A1242

Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type Ft
Contextual Info: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)

Contextual Info: 2SA1242 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. 0.6 ±0.15 0,95MAX q t q 0.6 M AX 5.210.2, J hFE = 100-320 (VCe = - 2 V , IC = -0 .5 A ) hjrE = 70 (Min.) (VCE= - 2 V , 1 = - 4 A)

Contextual Info: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR PNP TO-252 FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE Linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)

SA1242

Abstract: 2SA1242
Contextual Info: 2SA1242 TOSHIBA 2 S A 1 242 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • • hFE = 100-320 (Vce = —2 V, IC = -0 .5 A) hFE = 70 (Min.) (VCE = —2 V, IC = - 4 A) Low Collector Saturation Voltage

2SA1242

Abstract: A1242
Contextual Info: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)

transistor A1242

Abstract: 2SA1242 A1242
Contextual Info: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)

Contextual Info: 2SA1242 TO SHIBA 2 S A 1 242 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS M E D IU M POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vce = -2 V , Ic = -0.5A ) hFE = 70 (Min.) (VCE = _2V , IC = -4 A ) Low Collector Saturation Voltage

S1854

Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686

2SA1242

Contextual Info: 2SA1242 TO SH IBA 2 S A 1 242 T O S H IB A TRA N SIST O R STR O BE FLASH A PPLIC A TIO N S SILICON PN P E P IT A X IA L T Y PE PCT PRO CESS M E D IU M P O W E R A M P L IF IE R A PPLIC A T IO N S hFE = 100-320 (V c e = - 2 V , IQ = -0 .5 A) hFE = 70 (Min.) (VCE = - 2 V , IC = - 4 A )

2SA1242

Abstract: A1242 transistor A1242
Contextual Info: 2SA1242 TO SH IBA 2 S A 1 242 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vc e = —2 V, IC = -0 .5 A) hFE = 70 (Min.) (VCE = —2 V, IC = - 4 A) Low Collector Saturation Voltage

Contextual Info: 2SA1242 PNP TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)

A1242

Abstract: 2SA1242
Contextual Info: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Unit: mm Strobe Flash Applications Medium Power Amplifier Applications • Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)

A1242

Abstract: 2SA1242
Contextual Info: 2SA1242 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1242 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE の直線性が良好です。 : hFE (1) = 100~320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (最小) (VCE = −2 V, IC = −4 A)

2SA1242

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/252 Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR PNP TO-251 TO-252-2L FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE linearity 123 1 123 1. BASE : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)

Contextual Info: 2SA1242 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm STROBE FLASH APPLICATIO N S. MEDIUM POW ER AM PLIFIER APPLICATIO N S. • • • • hFE = 100~320(V cE :=-2 V , I q = —0.5A) hpE = 70(M in.)(VcE = -2 V , I c = -4 A ) Low Collector Saturation Voltage

2SA1242

Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2 S A 1 242 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1242) Unit in mm STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. . • • hFE = 100-320 (Vce = —2V, IC= - 0.5A) hFE = 70 (Min.) (V ce = - 2V, 1q = - 4A)

2SA1242

Abstract: A1242
Contextual Info: 2SA1242 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1242 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE の直線性が良好です。 : hFE (1) = 100~320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (最小) (VCE = −2 V, IC = −4 A)

transistor A1242

Abstract: 2SA1242 A1242
Contextual Info: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)

transistor A1242

Abstract: 2SA1242 A1242
Contextual Info: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)