2SA1357 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1357 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current ICM : -5 A Collector-base voltage V(BR)CBO : -35 V

A1357 transistor

Abstract: a1357 2SA1357
Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)

2SA1357

Contextual Info: 2SA1357 TO SH IBA 2 S A 1 357 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO POWER AMPLIFIER APPLICATIONS MIN hFE of 70 at -2 V , -4A . —5A Rated Collector Current. MAX VcE(sat)of -1.0V at -4 A Iq . 10W at 25°C Case Temperature.

AC188

Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A

2SA1357

Contextual Info: Transys Electronics L I M I T E D TO-126C Plastic-Encapsulated Transistors 2SA1357 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current : -5 A ICM Collector-base voltage V V(BR)CBO : -35 Operating and storage junction temperature range

2sa1357

Abstract: IC 2sa1357 70Vce
Contextual Info: 2SA1357 2SA1357 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current ICM : -5 A Collector-base voltage V V(BR)CBO : -35 Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃

2SA1357

Abstract: A1357
Contextual Info: 2SA1357 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1357 ○ ストロボフラッシュ ○ 中電力増幅用 単位: mm • hFE = 100~320 (VCE = −2 V, IC = −0.5 A) • hFE = 70 (最小) (VCE = −2 V, IC = −4 A)

LED display module

Abstract: pj496 j496
Contextual Info: MULTI CHIP BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62M8601F 8CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M 8601F is Multi Chip IC incorporates 8 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED display module applications.

Contextual Info: T O SH IB A TD62M4601F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4601 F 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M4601F is Multi Chip IC incorporates 4 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED

A1357 transistor

Abstract: a1357 Toshiba A1357 2SA1357
Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications • Unit: mm hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)

Contextual Info: TD62M8601F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8601F 8CH LOW SATURATION VOLTAGE SOURSE DRIVER TD62M8601F is Multi Chip IC incorporates 8 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED display

Contextual Info: TD62M8601FG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8601FG 8CH LOW SATURATION VOLTAGE SOURSE DRIVER TD62M8601FG is Multi Chip IC incorporates 8 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED display

Contextual Info: TD62M4601FG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4601FG 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M4601FG is Multi Chip IC incorporates 4 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED display

A1357 transistor

Abstract: A1357
Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)

Contextual Info: TD62M4601F TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4601 F 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M4601F is Multi Chip IC incorporates 4 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED

2SA1357

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1357 DESCRIPTION •High Collector Current-IC= -5.0A ·DC Current Gain: hFE= 70 Min @IC= -4A ·Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A APPLICATIONS ·Strobe flash applications.

2SA1357

Abstract: SSOP16 TD62M4601F
Contextual Info: TOSHIBA TD62M4601F TO SH IBA BIPOLAR D IG ITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4601F 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M 4601F is Multi Chip IC incorporates 4 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use m otor drive and LED

TD62M8601

Contextual Info: TOSHIBA TD62M8601F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8601 F 8CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M8601F is Multi Chip IC incorporates 8 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LEE

A1357 transistor

Abstract: a1357 2SA1357 PF0100
Contextual Info: TOSHIBA 2SA1357 2 S A 1 357 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. AUDIO PO W ER AM PLIFIER APPLICATIONS. B.3MAX. MIN hFE of 70 at -2V , -4A . —5A Rated Collector Current. MAX V0E(sat)°f —1«0V at —4A Ig.

2SA1357

Abstract: SSOP16 TD62M4601F LED display module
Contextual Info: TD62M4601F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4601F 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M4601F is Multi Chip IC incorporates 4 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED display

Contextual Info: 2SA1357 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. A U D IO PO W ER AM PLIFIER APPLICATIONS. • • • • MIN hpE of 70 at —2V, —4A. —5A Rated Collector Current. MAX V cE (sat)of -1-0V at -4 A I q . 10W at 25°C Case Temperature.

2SA1357

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1357 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 1. EMITTER Collector current : -5 A ICM Collector-base voltage V V(BR)CBO : -35

b0944

Abstract: b0946 SM2177 RCA1C13 rca1c04 to-53 2n3191 2SA1120 Motorola 2N6297 2N3183
Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 - >= 20 2S81095M MJE253 2S8860 RCA1C04 2S81095L 2S81168 2S81216 2S81095K ~~~~~ 25 30 RCA1C13 SK3626 2N6468 2N6476 SM2177 NA62U NA62W 80S18 BDS19 I(C) 35 40 50 2SA1357Y 80944 B0944 B0944F MJD210 MJD21 0-1

2SA1357

Abstract: SSOP16 TD62M4601F
Contextual Info: TD62M4601F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4601F 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M4601F is Multi Chip IC incorporates 4 low saturation discrete 2SA1357 transistors. This IC is suitable for a battery use motor drive and LED display