2SA1579 Search Results

2SA1579

Abstract: smd transistor rr
Contextual Info: Transistors SMD Type High-Voltage Amplifier Transistor 2SA1579 Features High breakdown voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120

Contextual Info: 2SA1579 PNP General Purpose Transistors P b Lead Pb -Free 3 1 2 SOT-323 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4102 TRANSISTOR NPN FEATURES SOT–323  High Breakdown Voltage  Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

TT106

Abstract: 2SC2389S 2SC4102 2SA1038S 2SA1514K 2SA1579 2SC3906K T106 T146 MARKING CODE 21 SOT-346
Contextual Info: 2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor 120V, 50mA 2SC4102 / 2SC3906K / 2SC2389S !External dimensions (Units : mm) !Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 2.0

Contextual Info: 2SA1579FRA / 2SA1514AK 2SA1579 / 2SA1514K Datasheet PNP -50mA -120V High-Voltage Amplifier Transistors AEC-Q101 Qualified lOutline Parameter Value VCEO IC -120V -50mA UMT3 Collector SMT3 Collector Base Base Emitter Emitter 2SA1579FRA 2SA1579 SOT-323 SC-70

3906K

Contextual Info: 2SA1514K/2SA1579 h ~7> V Z $ / T ransistors 2SA1514K 2SA1579 I fc i 7 ^ 1 /7 lx - : H f 2 P N P V ' j 3 > h 7 > y ^ i ' Epitaxial Planar PNP Silicon Transistors ¡gWEEiStiffl/High Voltage Amp. • ÿ i-J f^ Ü H /D im e n s io n s Unit : mm 1) S S4E T 'i.5o VC e o = -1 2 0 V

Contextual Info: 2SA1579 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: ROHm 1/2 Speci t icat ion Products Type U l t r a Mi ni m o Id T r a n s i s t o r 2SA1579 2 SA 15 7 9 1. Type 2. Description Epitaxial planar PNP silicon transistor 3. Application H igh Vo 11 age Amp I 4. Abolute maximum ratings. [ Ta = 25°C ] — 120V Collector to base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SA1579 TRANSISTOR PNP 1. BASE FEATURES z High breakdown voltage. (BVCEO = -120V) z Complements the 2SC4102 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA amplifier

Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K

2SA1514K

Abstract: 2SA1579 2SC3906K 2SC4102
Contextual Info: Transistors 2SA1579 / 2SA1514K 2SC4102 / 2SC3906K 96-92-A41 (96-170-C41) 275

2SC4649

Contextual Info: Bipolar transistors-2SA series EMT3, UMT3, & SMT3 summary General use bipolar transistors Package Application EMT3 2SA1774 Preamplifier 2SC4617 Driver •c V CEO V SMT3 UMT3 'VCES (mA) 2SA1576A 2SA1037AK -50 -150 2SA1579 2SA1514K -120 -50 2SC4081 2SC2412K

C3906K

Abstract: C4102
Contextual Info: 2SA1579 / 2SA1514K 2SC4102 / 2SC3906K Transistors I High-voltage Amplifier Transistor —120V, —50mA 2SA1579 / 2SA1514K + 0 A bsolute m axim um ratings ( 7 8 = 2 5 * 0 ) F e a tu r e s 1 ) High breakdown voltage. ( V c e o = — 120V) 2 ) C om plem ents the 2S C4102/2S C3906K.

Contextual Info: 2SA1579 SOT-323 Transistor PNP SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features — — High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage

2sa1514k

Contextual Info: 2SA1579 / 2SA1514K Datasheet PNP -50mA -120V High-Voltage Amplifier Transistors lOutline Parameter Value VCEO IC -120V -50mA UMT3 SMT3 Collector Collector Base Base Emitter Emitter 2SA1579 SOT-323 SC-70 lFeatures 1) High Breakdown Voltage (BVCEO= -120V)

2SA1579

Abstract: 2SC4102 MARKING 560
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SA1579 TRANSISTOR PNP 1. BASE FEATURES z High breakdown voltage. (BVCEO = -120V) z Complements the 2SC4102 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: Transistors SMD Type Product specification 2SA1579 Features High breakdown voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage

2SC4174

Abstract: 2SA1572 2SAI611 2SA1584 2SA1609 2SA1613 2sc4118 2SA1568 2SA1571 2SA1573
Contextual Info: - 42 - Ta=25‘iO, *EP(àTc=25'1C M 2SA1568 2SA1571 2SA1572 2SA1573 2SA1574 2SA1575 2SA1576 2SA1577 2SA1579 2SA1580 2SA1581 2SA1582 2SA1584 2SA1585S 2SA1586 2SA1587 2SA1588 2SA1589 2SA1590 2SA1591 2SA1592 2SA1593 2SA1597 2SA1602 2SA1603 2SA1604 2SA1605 2SA1606

IMH10

Contextual Info: Index Index 2SA1036K 69 2SA1037AK 73 2SA1514K 77 2SA1576A 73 2SA1577 69 2SA1579 77 2SA1727F5 81 2SA1759 85 2SA1774 73 2SA1797 89 2SA1807F5 92 2SA1834F5 96 2SA1862F5 100 2SA1870 104 2SA1900 106 2SC4617 169 2SC4649 160 2SC4672 201 2SC4713K 204 2SC4774 204 2SC4938 209

2SA1514K

Abstract: 2SA1038S 2SA1579 2SC2389S 2SC3906K 2SC4102 SC-72 T106 2SC3906 2SA1514
Contextual Info: 2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor −120V, −50mA 2SA1579 / 2SA1514K / 2SA1038S zExternal dimensions (Unit : mm) 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 2SA1579 1.25 0~0.1 0.15 0.2 2.1 0.1Min. Each lead has same dimensions

Contextual Info: High-voltage Amplifier Transistor 120V, 50mA 2SC4102 / 2SC3906K Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K Dimensions (Unit : mm) 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 Absolute maximum ratings (Ta=25C)

2SC3906K

Contextual Info: High-voltage Amplifier Transistor 120V, 50mA 2SC4102 / 2SC3906K Dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K 2.0 1.3 0.9 Unit V V V mA W Tj Tstg 150 −55 to +150 °C °C Junction temperature

2SC3906K

Abstract: 2SA1038S 2SA1514K 2SA1579 2SC2389S 2SC4102 SC-72 T106 2SC238
Contextual Info: 2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor 120V, 50mA 2SC4102 / 2SC3906K / 2SC2389S zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. Tj

Contextual Info: 2 S A 1 5 7 9 / 2 S A 1 51 4K Transistors I 2 S C 4 1 02 / 2 S C 39 06K High-voltage Am plifier Transistor —120V, —50mA 2SA1579 / 2SA1514K # Features 1 ) High breakdown voltage. (V ceo= — 120V) 2 ) C om plem ents the 2SC4102/2SC3906K. # A b solute m axim um ratings (T a = 2 5 °C )