2SA1586 Search Results

Contextual Info: 2SA1586 SILICON PN P EPITAXIAL T Y P E TRANSISTO R Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High current : Vc e o = —50V, IC = —150mA Max. Excellent hpE Linearity : hjTE d c = —0.1mA)/hjrj; (Iq = —2mA) = 0.95 (Typ.)

Contextual Info: TOSHIBA 2SA1586 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 586 AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • U nit in mm High Voltage and High current : V C E 0 = —50V, I C = - 1 5 0 m A (Max.) 2.1 ±0.1 1.2 5 ± 0.1

2SA1586

Abstract: 2SA1586GR 2SA1586-Y 2SC4116 2SA1586O 2SA1586-GR
Contextual Info: 2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES     High DC Current Gain High Voltage and High Current Complementary to 2SC4116

2SA1586

Abstract: 2SC4116
Contextual Info: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1586 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)

TRANSISTOR BL 100

Abstract: transistor marking LG sot-323 Marking LG 2SC4116W transistor marking code lg LY SOT323 SOT 23 LY transistor marking c rank Y 2SA1586 ly transistor
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4116W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1586. z Small package. Pb Lead-free APPLICATIONS z SOT-323 NPN Silicon Epitaxial Planar Transistor.

2SA1586

Abstract: 2SC4116
Contextual Info: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)

2S897

Abstract: 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283
Contextual Info: 66 - m % tt T y p e No. 2 SB 1216 ^ ^ 2SB 1218 ^ 2SB 1218A a * 85 T fö T tö T 2SB 1219A fö 2SB 1220 ta 2SB 1219 V- 2SB 1222 2S8 1223 f 2SB 1224 2SB 1225 J 2SB 1226 ^ ±L 2SA1622 2SA1586 m ± m FU JITSU iß T MATSUS H I T A 2SB1218A 2 S A1576 2 S A 16 0 3

Contextual Info: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)

sot323 transistor marking

Abstract: 2SA1586W 2SC4116 BL MARKING CODE SY SOT323 Marking sy sot
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z High voltage and high current. z Excellent HFE Linearity. z High hFE linearity. z Complementary to 2SC4116. 2SA1586W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.

2SA1586

Abstract: 2SC4116
Contextual Info: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1586 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) · Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)

2SA1586

Abstract: 2SC4116
Contextual Info: 2SA1586 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1586 ○ 低周波増幅用 ○ 低周波低雑音増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) : VCEO = −50 V

2SA1586

Abstract: 2SC4116
Contextual Info: 2SA1586 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1586 ○ 低周波増幅用 ○ 低周波低雑音増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) : VCEO = −50 V

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4116 TRANSISTOR NPN FEATURES z High voltage and high current z Excellent hFE linearity z High hFE z Low noise z Complementary to 2SA1586 1. BASE 2. EMITTER

2SC4174

Abstract: 2SA1572 2SAI611 2SA1584 2SA1609 2SA1613 2sc4118 2SA1568 2SA1571 2SA1573
Contextual Info: - 42 - Ta=25‘iO, *EP(àTc=25'1C M 2SA1568 2SA1571 2SA1572 2SA1573 2SA1574 2SA1575 2SA1576 2SA1577 2SA1579 2SA1580 2SA1581 2SA1582 2SA1584 2SA1585S 2SA1586 2SA1587 2SA1588 2SA1589 2SA1590 2SA1591 2SA1592 2SA1593 2SA1597 2SA1602 2SA1603 2SA1604 2SA1605 2SA1606

marking IAY

Abstract: 2SA1586 2SC4116 A1586 2SA158
Contextual Info: TOSHIBA 2SA1586 2 S A 1 586 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High current : V c e O = - 50V, IC =-150m A (M ax.) Excellent hpE Linearity

Contextual Info: Transistors SMD Type Product specification 2SA1586 Features High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

Contextual Info: 2SC4116 General Purpose Transistor NPN Silicon COLLECTOR 3 3 P b Lead Pb -Free 1 1 BASE 2 2 EMITTER FEATURES * High voltage and high current * Excellent h FE linearity * High h FE * Low noise * Complementary to 2SA1586 SOT-323(SC-70) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

3SK275

Abstract: 2sk882 transistor TT fet C439-4 FR90
Contextual Info: Surface Mount Device 2 Ultra Super-Mini Transistors (USM) - F5/F6 Electrical Characteristics (Ta=25°C) Type No. Application VcEO (V) Ic (mA) Pc (mW) Tj (°C) Mark Comple­ mentary Similar TO-92 Remarks (Super-Mini) 2SA1586 Low-frequency amplification

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SA1586 TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  High Voltage and High Current.  Complementary to 2SC4116  Small Package APPLICATIONS  General Purpose Amplification.

2SA1586

Abstract: marking IAY 2SC4116 A1586 transistor marking bh ra
Contextual Info: TOSHIBA 2SA1586 2 S A 1 586 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High current : v CE0 = _ 50V, IC = - 150mA (Max.) Excellent hEE Linearity : hpE dC = -0.1mA) / hFE (Ic = -2m A) = 0.95 (Typ.)

Contextual Info: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)

Contextual Info: TOSHIBA 2SA1586 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 586 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • U nit in mm High Voltage and High current 2.1 ± 0.1 : Vc e o = —50V, I C = —150mA(Max.) • Excellent hpE Linearity

pnp hfe 120-240

Abstract: smd marking SG MARKING SO smd marking sy 2SA1586
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1586 Features High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

JE 1692

Abstract: 2SB811 2SB1443 2SB1242 2SA1586 2SB1376 2SB1434 2SA1323 2SA1227 2SA1431
Contextual Info: - 38 - S! tt « Typ e No. 2SA 1681 « Manuf. % H ft SANYO n s TOSHIBA N EC tL HITACHI s d r iS F UJ ITSU «5 T MAT S U S H I T A 2 SA 1304 2SB1096 2SB928 2SA 1685 - = & 2SA1586 2SA1613 2SB1218A 2SA 1686 □ — A 2SA1015 2SAU75 2SA 1687 h 2SA 1688 = ft 2SA 1689