2SA1680 Search Results

LED display module

Contextual Info: MULTI CHIP BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is M ulti Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED

A1680

Abstract: 2SA1680 2SC4408
Contextual Info: 2SA1680 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)

Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)

transistor A1680

Abstract: A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR
Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)

transistor A1680

Abstract: 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680
Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)

Contextual Info: TOSHIBA TRANSISTOR 2 S A 1 680 SEMICONDUCTOR TOSHIBA TECHNICAL SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (2SA1680) Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • • 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )

A1680

Abstract: 2SC4408 2SA1680
Contextual Info: 2SA1680 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)

Contextual Info: T O SH IB A 2SA1680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm 5.1 M AX • Low Collector Saturation Voltage : V cE (sat) = - 0 .5 V (Max.) (IC = - 1A) •

A1680

Abstract: transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680
Contextual Info: TOSHIBA 2SA1680 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. Unit in mm 5.1 MAX • Low Collector Saturation Voltage : v CE(sat)= - 0 .5 V (Max.) (1^ = -1 A ) • High Collector Power Dissipation : Pg = 900mW (Ta = 25°C)

Contextual Info: TOSHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT • v ■ V ■ ■ MULTI CHIP * m ■ 8ch LO W SATURATION VOLTAGE SOURCE DRIVER The TD62M 8604AF is M u lti C hip 1C in co rp o ra tes 8 lo w sa tu ra tio n discrete PNP : 2SA1680 transistors.

TD62M8604AF

Abstract: 2SA1680 HSOP16
Contextual Info: TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display

Contextual Info: TO SHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED

Contextual Info: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display

transistor A1680

Abstract: 2sa1680 TRANSISTOR A1680
Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)

transistor A1680

Abstract: 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680
Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)

2sa1680

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1680 U nit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. » • • • Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A) High Collector Power Dissipation : P ç = 900mW (Ta = 25°C)

transistor 2SA1680

Abstract: 2SA1680 2SC4408 A1680 SA1680 TRANSISTOR A1680 2sa1680 TRANSISTOR
Contextual Info: 2SA1680 TO SH IBA 2 S A 1 680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )

2sc4793

Abstract: 2SC2482 2SA1145 2SC2705 2sa1680 2SA1837 2sc2655 npn general purpose transistors application 2sd201
Contextual Info: contents www search print index quit Power Devices ➔ ➔ • Standard Bipolar Transistors Medium Power Unit in mm LSTM TO-92 MOD VCEO PNP (V) 2SA1020 2SA1680 2SA1145 49.1 49.1 49.2 IC P hfE@ VCE (V) NPN 2SC2655 2SC2482 2SC4408 2SC2705 50 300 50 150 (A)

2SA1692

Abstract: 2SA1719 2SA1712 2SA1715 2SA1107 2SC4490 MP40 2SA1699 2sa1115 2SA1680
Contextual Info: - 46 - m X Ë fà s ít £ ffl & Vcbo V 2SA1678 Hi# INV/SW/D ' 50 (Ta=25‘ C , * E P ( á T c = 2 5 cC ) VcEO (V} - 50 I c (DC) 0.15 2SA1680 PA/PSW - 60 -50 -2 0. 9 PA/PSW '60 - 50 -2 0.5 HV D -300 -300 -0.05 0. 25 -100 -80 -0.5 0. 3 -40 -20 -0.15 0.15

Contextual Info: 2SA1680 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • 5.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)

Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)

Contextual Info: TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display

Contextual Info: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display

Contextual Info: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display