2SC4490 Search Results

A1710

Abstract: c4490 2SC1490 2SA1710 2SC4490 T3G8 AL710
Contextual Info: O rde rin g nu m b e r : EN 3097 2SA1710/2SC4490 No.3097 PNP/NPN Epitaxial Planar Silicon Transistors High-Definiti on CRT Display Video Output Applications I F eatu re s • High breakdown voltage Vce O—300V •Excellent high frequency characteristic

Contextual Info: Ordering number: EN 3097 2SA1710/2SC4490 PNP/NPN Epitaxial Planar Silicon Transistors SAtVO High-Defmition CRT Display Video Output Applications '• iV V y ■' 1 I • Features ■High breakdown voltage V ceo — 300V ■ Excellent high frequency characteristic

2SA1710

Abstract: 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

ITR04363

Abstract: ITR04364 2SA1710 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: 注文コード No. N 3 0 9 7 2SA1710/2SC4490 No. N 3 0 9 7 20400 2SA1710 / 2SC4490 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高精細度 CRT ディスプレイビデオ出力用 ・高耐圧である（VCEO ≧ 300V）

2sc4490

Abstract: 2SA1710 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

2SA1710

Contextual Info: Ordering number:EN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

2SA1710

Abstract: 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

NEC k 3654

Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
Contextual Info: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

2sb892

Abstract: 2sc4645 2sC4389 2SB1406
Contextual Info: SASYO NMP New MPJTransistor Series * Small-sized package containing the same chip that has been so far placed in * Small-sized package making it possible to make application setssmaller and * Can meet tape-used automatic mounting requirements. * Full line-up of products for wide application.

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SC4496

Abstract: 2SC4477 2SC4494 2sc4503 tx 2G 2sc450 2sc4504 2SC4473 2SC4474 2SC4475
Contextual Info: - 204 Ta=25ti(*EP(àîc=25‘ C M 2SC4473 £ ffi S H # CRT Vid e o Out iÉ VcBO Vceo (V) (V) 120 Ì C(D C ) (A) 1 20 0 .4 Pc Pc* (W) (W) S IcBO (max) (//A) 1.8 10 10 1 le 1 (A) 0.05 Ib (A) 0.005 10 0.01 1 1 0.03 0.003 5 0. 0 0 0 1 5 2 0. 0 0 0 2 0. 0 0 0 0 4

KA 3264

Abstract: 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371
Contextual Info: - 158 - s « Type No. tt £ Manuf. 2SC 3259 * S tS t c 2SC 3260 * ífM&TE 2SC 3261 „ « S Æ X SANYO X NEC B ÍL HITACHI ^ 2SC2555 2SC3322 fé T MATSUSHITA ✓ JE 2SC 3266 ✓ S 3£ 2SD1246 2SC 3267 * $ 2SD1246 2SC 3268 3t $ 2SD1295 □- A 2SC2271 □- A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sc5694

Abstract: TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707
Contextual Info: Low-Saturation Voltage Transistors Shortform Table Lead Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages SPA NP NMP MP TP FLP

2SA1829

Abstract: 2SC3790 p7060 2SC5291 T0-126ML 2SA1371 2SC4732 e1aj SANYO CP5 transistor 2sc3788
Contextual Info: Transistors for TV Display Video Output Use F e a t u r e s » E x c e lle n t HF c h a r a c t e r i s t i c . * Small re v e rse t r a n s f e r c ap a c ita n c e . * Complementary PNP and NPN types. ♦ Adoption o f MBIT, FBET p ro c e sse s. * H ighly r e s i s t a n t to d i e l e c t r i c breakdown.

STK412-750

Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Contextual Info: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc

TRANSISTORS SANYO 2sc2621

Abstract: 2SA148 2sc3503 2sc3789 2sc2621
Contextual Info: SAfiYO Transistors for TV D i s p l a y V i d e o O u t p u t Use F e a t u r e s * Excellent HF characteristic. * Small reverse transfer capacitance. * Complementary PNP and NPN types. ♦ Adoption of MBIT, FBET processes. * Highly resistant to dielectric breakdown,

Contextual Info: NMP New MP Transistor Series F e a t u r e s * Small-sized package containing the same chip that has been so far placed in the MP.TO-126 packages. * Small-sized package making.it possible to make application setssmaller and slimmer. * Can meet tape-usea automatic mounting requirements.

2SA1692

Abstract: 2SA1719 2SA1712 2SA1715 2SA1107 2SC4490 MP40 2SA1699 2sa1115 2SA1680
Contextual Info: - 46 - m X Ë fà s ít £ ffl & Vcbo V 2SA1678 Hi# INV/SW/D ' 50 (Ta=25‘ C , * E P ( á T c = 2 5 cC ) VcEO (V} - 50 I c (DC) 0.15 2SA1680 PA/PSW - 60 -50 -2 0. 9 PA/PSW '60 - 50 -2 0.5 HV D -300 -300 -0.05 0. 25 -100 -80 -0.5 0. 3 -40 -20 -0.15 0.15