2SA1832 Search Results

2SA1832F

Abstract: 2SC4738F
Contextual Info: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

2SC4738

Abstract: 2SA1832
Contextual Info: 2SA1832 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1832 ○ 低周波増幅用 • 単位: mm : VCEO = −50 V 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) • 電流増幅率が高い。

Plastic-Encapsulate Transistors

Abstract: marking SG transistors 2SA1832
Contextual Info: SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1832 TRANSISTOR（PNP） 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.1 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage V BR CBO : -50 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 2SA1832 Plastic-Encapsulate Transistors SOT-523 TRANSISTOR PNP FEATURES z High voltage and high current z Excellent hFE linearity z Complementary to 2SC4738 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA1832FT

Abstract: 2SC4738FT
Contextual Info: 2SA1832FT シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1832FT ○ 低周波増幅用 • 単位: mm 高耐圧です。 : VCEO = −50 V • コレクタ電流が大きい。 : IC = −150 mA (最大) • 電流増幅率が高い。

2SC4738

Abstract: 2SA1832
Contextual Info: 2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) · Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)

2SA1832

Contextual Info: 2SA1832 SOT-523 2SA1832 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.1 3. COLLECTOR W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

2SA1832F

Abstract: 2SC4738F
Contextual Info: 2SA1832F シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1832F ○ 低周波増幅用 • 単位: mm : VCEO = −50 V 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) • 電流増幅率が高い。

2SA1832

Abstract: 2SC4738 SC-75
Contextual Info: 2SC4738 NPN TRANSISTOR 3 P b Lead Pb -Free 1 2 FEATURES: High voltage and high current Excellent h FE linearity High h FE Complementary to 2SA1832 SOT-523(SC-75) MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Value Units Collector-Base Voltage VCBO

2SA1832FT

Abstract: 2SC4738F
Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity

2SA1832

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1832 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current : -0.15 A ICM Collector-base voltage

Contextual Info: MCC TM Micro Commercial Components 2SA1832-Y 2SA1832-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • PNP Silicon Epitaxial Transistor Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

2SC4738

Abstract: 2SA1832 A1832
Contextual Info: 2SA1832 TO SH IBA 2 S A 1 832 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • 1.6±'0.2 0.8 ± 0.1 HO +I ÖÖ 2 -EH- j 1— ' MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SA1832FT

Abstract: 2SC4738F
Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity

Contextual Info: 2SA1832 PNP TRANSISTOR 3 P b Lead Pb -Free 1 FEATURES: * High voltage and high current * Excellent hFE linearity * Complementary to 2SC4738 2 SOT-523(SC-75) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage

Contextual Info: TOSHIBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS • • • High Voltage and High Current : VCE0 = - 50V, I C = - 150mA(Max.) Excellent hpE Linearity : hpE Oc ~ - 0.1mA) I hFE d c = -2m A) = 0.95 (Typ.)

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1832 U n it in mm A U D IO F R E Q U E N C Y G E N E R A L P U R P O SE A M P L IF IE R A P P L IC A T IO N S . • H igh Voltage and H igh Curren • E xcellent hjPE L inearity • H igh hpE . h j'j; = 70~400 • Com plementary to 2SC4738

Contextual Info: 2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832 Audio Frequency General Purpose Amplifier Applications • • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)

2SA1832F

Abstract: 2SC4738F
Contextual Info: TO SH IBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current : V c e O = -5 0 V, Iq = -1 5 0 mA (max.)

marking IAY

Abstract: 2SA1832F 2SC4738F
Contextual Info: TOSHIBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current : VCEO = —50V, Iq = —150mA (Max.) Excellent hFE Linearity

2SA1832

Contextual Info: Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulated Transistors SOT-523 2SA1832 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -50

2SC4738TT

Abstract: 2SA1832F
Contextual Info: 2SC4738TT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738TT Audio Frequency General Purpose Amplifier Applications 0.22 ± 0.05 Complementary to 2SA1832F • Small package 1 0.45 • 1 0.45 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

Contextual Info: TOSHIBA 2SA1832F TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current ; V q e O = “ 50V, Ic = —150mA (Max.)