2SC4738 Search Results

Contextual Info: T O SH IB A 2SC4738 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V C E O = 50V, Ic = 150mA (Max.) Excellent hpg Linearity : hpE (I q = 0.1mA) / hpg (I q = 2mA) = 0.95 (Typ.)

Contextual Info: 2SC4738 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)

2SA1832FT

Abstract: 2SC4738FT
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • • • • • Unit: mm High Voltage: VCEO = 50 V High Current: IC = 150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE Linearity

2SA1832FT

Abstract: 2SC4738FT
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 2SA1832 Plastic-Encapsulate Transistors SOT-523 TRANSISTOR PNP FEATURES z High voltage and high current z Excellent hFE linearity z Complementary to 2SC4738 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC4738

Abstract: 2SA1832
Contextual Info: TOSHIBA 2SC4738 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • High Voltage and High Current : V ç;E q = 50V, I q = 150mA (Max.) Excellent hEE Linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (Typ.)

2SC4738

Abstract: 2SA1832
Contextual Info: TO SH IBA 2SC4738 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • • High Voltage and High Current : V0EO-5OV, 10 = 150mA (Max.) Excellent hjpg Linearity

Contextual Info: TOSHIBA 2SC4738 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Unit in mm High Voltage and High Current 1 .6 ±0 .2 0.8 ± 0.1 : VCEO = • 50V, Ic = 150mA (Max.) • ES- Excellent hpg Linearity

2SA1832

Abstract: 2SC4738
Contextual Info: 2SC4738 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)

2SA1832

Abstract: 2SC4738 SC-75
Contextual Info: 2SC4738 NPN TRANSISTOR 3 P b Lead Pb -Free 1 2 FEATURES: High voltage and high current Excellent h FE linearity High h FE Complementary to 2SA1832 SOT-523(SC-75) MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Value Units Collector-Base Voltage VCBO

2SA1832

Abstract: 2SC4738
Contextual Info: 2SC4738 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4738 ○ 低周波増幅用 ○ AM 増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) : VCEO = 50 V • 電流増幅率が高い。

2SC4738F

Abstract: 2SA1832F
Contextual Info: 2SC4738F シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4738F ○ 低周波増幅用 ○ AM 増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) : VCEO = 50 V • 電流増幅率が高い。

2SC4738

Abstract: smd marking ly smd ic marking LY hFE-120 npn MARKING LY marking LGR
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar type 2SC4738 SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 Features +0.05 0.8-0.05 0.55 2 +0.01 0.1-0.01 High voltage and high current:VCE=50V,IC=150mA Max. 0.35 3 Excellent hFE linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)

2SC5585

Abstract: 2SC4738
Contextual Info: 2SC5585 0.5A , 15V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-523 High Current. Low VCE sat . VCE(sat)≦0.25V (@IC=200mA / IB=10mA) Complement of 2SC4738.

transistor ESM 3000

Abstract: 2SA1832F 2SC4738F
Contextual Info: TOSHIBA 2SC4738F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current : V ç;e O = 50V, Ig = 150mA (Max.) Excellent hFE Linearity

2sc4738

Contextual Info: 2SC4738 SOT-523 2SC4738 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 0.1 W (Tamb=25℃) Collector current ICM: 0.15 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

2sc4738ft

Abstract: 2SA1832FT
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

Contextual Info: 2SA1832 PNP TRANSISTOR 3 P b Lead Pb -Free 1 FEATURES: * High voltage and high current * Excellent hFE linearity * Complementary to 2SC4738 2 SOT-523(SC-75) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage

2sc4738ft

Abstract: 2SA1832FT IC5010
Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2SC4618 TRANSISTOR NPN FEATURES  High Voltage and Current  High DC Current Gain  Complementary to 2SC4738  Small Package APPLICATIONS  General Purpose Amplification

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1832 U n it in mm A U D IO F R E Q U E N C Y G E N E R A L P U R P O SE A M P L IF IE R A P P L IC A T IO N S . • H igh Voltage and H igh Curren • E xcellent hjPE L inearity • H igh hpE . h j'j; = 70~400 • Com plementary to 2SC4738

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 2SC4738 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 0.1 W (Tamb=25℃) Collector current 0.15 A ICM: Collector-base voltage

2SC4738TT

Abstract: 2SA1832F
Contextual Info: 2SC4738TT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738TT Audio Frequency General Purpose Amplifier Applications 0.22 ± 0.05 Complementary to 2SA1832F • Small package 1 0.45 • 1 0.45 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)