2SA1862 Search Results

2SA1807

Contextual Info: 2SA1807 2SA1862 Transistors High-voltage Switching Transistor Telephone, Power supply 2SA1807 • F ea tu re* ^Absolute m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage (V c e o = —600V) 2 ) L o w V c e i w i ) . (T y p .—0.25V at Ic/I b = —3 0 0 /—60m A)

2SA1862

Abstract: 3335 3335 datasheet 82721
Contextual Info: SPICE PARAMETER 2SA1862 by ROHM TR Div. * 2SA1862 PNP BJT model * Date: 2006/11/24 .MODEL 2SA1862 PNP + IS=700.00E-15 + BF=148.96 + VAF=100 + IKF=1.3335 + ISE=700.00E-15 + NE=1.5139 + BR=5.9640 + VAR=100 + IKR=3.0448 + ISC=254.07E-12 + NC=1.5132 + NK=.70497

TRANSISTOR 3F z

Abstract: pnp transistor 400V 500mA 2SA1862 2SA1862F5
Contextual Info: hÿ 2 > V 7k£ SA /Transistors 1 8 6 2 2SA1862F5 F5 PNP y y □ > by> Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ^ ‘^•jiS/Dimensions (Unit: mm) 1) B VceO =~400V 2) □ VCE (s e t)= -0 .3 V (Typ.)

Contextual Info: 2SA1862 Transistors High-voltage Switching Transistor −400V, −2A 2SA1862 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = −400V) 2) Low saturation voltage. (Max. VCE (sat) = −0.5V at IC / IB = −500mA / −100mA) 3) High switching speed, typically tf = 0.4µs at IC = −1A.

2SA1862

Abstract: 2SA1807 A343
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307

a1862

Abstract: 2SA1862
Contextual Info: 2SA1862 Transistors High-voltage Switching Transistor −400V, −2A 2SA1862 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = −400V) 2) Low saturation voltage. (Max. VCE (sat) = −0.5V at IC / IB = −500mA / −100mA) 3) High switching speed, typically tf = 0.4µs at IC = −1A.

IMH10

Contextual Info: Index Index 2SA1036K 69 2SA1037AK 73 2SA1514K 77 2SA1576A 73 2SA1577 69 2SA1579 77 2SA1727F5 81 2SA1759 85 2SA1774 73 2SA1797 89 2SA1807F5 92 2SA1834F5 96 2SA1862F5 100 2SA1870 104 2SA1900 106 2SC4617 169 2SC4649 160 2SC4672 201 2SC4713K 204 2SC4774 204 2SC4938 209

2SA1862

Contextual Info: 2SA1862 Transistors High-voltage Switching Transistor −400V, −2A 2SA1862 zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO −400 −400 V V Emitter-base voltage VEBO −7 −2 −4 V A (DC)

Contextual Info: 2SA1862 Transistors High-voltage Switching Transistor −400V, −2A 2SA1862 Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO −400 −400 V V Emitter-base voltage VEBO −7 −2 −4 V A (DC) Parameter Collector current IC

Contextual Info: 2SA1862 Transistors High-voltage Switching Transistor 400V, 2A 2SA1862 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage. (Max. VCE (sat) = 0.5V at IC / IB = 500mA / 100mA) 3) High switching speed, typically tf = 0.4Ps at IC = 1A.

2SA1807

Abstract: A343 2SA1862
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SA1862

Contextual Info: 2SA1862 Transistors High-voltage Switching Transistor −400V, −2A 2SA1862 Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO −400 −400 V V Emitter-base voltage VEBO −7 −2 −4 V A (DC) Parameter Collector current IC

Contextual Info: 2SA1862F5 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)4 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2sa 102 transistor

Abstract: A1862 transistor 2SA 101 LA marking code PNP transistor 2sa 102 2SA series a8cc marking code V6 69 2SA1862F5 transistor PNP
Contextual Info: 2SA1862F5 Transistor, PNP Features Dimensions Units : mm • • • available in CPT F5 (SC-63) package package marking: A1862*Q, where ★ is hFE code and □ is lot number 2SA1862F5 (CPT F5) high breakdown voltage, typically 60 B V Ce o = -4 0 0 V •

2SA1662

Abstract: 2sa1807
Contextual Info: 2SA1807 2SA1862 Transistors High-voltage Switching Transistor Telephone, Power supply 2SA1807 • Features •A b s o lu te maximum ratings (Ta—25”C ) 1) H igh breakdow n vo ltag e (V ceo ~ — 6 0 0 V ) 2 ) Lo w 3) F a s t switching, ( t f : T y p .0 .4

2sa 102 transistor

Abstract: power ge transistor pnp transistors 2SA
Contextual Info: 2SA1862F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A 1 8 6 2 *0 , where ★ is hFE code and □ is lot number • high breakdown voltage, typically BVceo = —400 V • low collector saturation voltage

Contextual Info: 2SA1862F5 h 7 > V ^ £ /Transistors 2SA 1862F5 E i s s i y u - t m pnp y u □ > h ? > v * $ Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ^• '\t'3s0/Dimension8 (U nit: mm) 1) s iB ffT ife S o

TRANSISTOR D400

Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)

2SA1807

Abstract: A331 2SA1862 96-109-A343
Contextual Info: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors Packages 45

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

2SD947F

Abstract: 2SC4137 2sa1775 transistor 2SB1516 2SD1379 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A
Contextual Info: Transistors CPT • TO-126 • TO-126FP CPT SC-59 is also available as automated, surface mount type by adding F5 to the part number TO-126FP is a direct mounting type, allowing simple assembly without additional insulator. Package CPT Application TO-126

lnk304pn

Abstract: LNK306PN top247yn LNK304PN equivalent lnk302pn LNK606PG PLC810PG FREE LNK304PN TOP250Y TOP250R
Contextual Info: 2 11 D2 DL4007 FL1 Solid-State Lighting Solutions VR1 1 FL2 1.5KE200A AC-DC LED Driver ICs D8 MBRS4201T3G 3 D3 UF4007 R2 2 MΩ 1% R8 D6 150 Ω DL4936 1% 2 D4 SB3100 D LinkSwitch-PH U1 LNK406EG V D5 SS14 R5 3.01 kΩ 1% CONTROL S FB R4 49.9 kΩ 1% C5 22 µ