2SC1568
Abstract: 2SA900
Text: Inchange Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING
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2SC1568
O-126
2SA900
500mA
-50mA
200MHz
2SC1568
2SA900
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2SA900
Abstract: 2SC1568
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS
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2SA900
2SC1568
-50mA
-50mA;
2SA900
2SC1568
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2SA0900
Abstract: 2SA900 2SC1868
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink
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2SA0900
2SA900)
2SC1868
O-126B
2SA0900
2SA900
2SC1868
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2SC1568
Abstract: 2sc* pnp 2SA0900 2SA900
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification Complementary to 2SC1568 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector to emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink
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2SA0900
2SA900)
2SC1568
O-126B
2SC1568
2sc* pnp
2SA0900
2SA900
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2SA900
Abstract: 2SC1568
Text: JMnic Product Specification 2SA900 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1568 ・Low collector saturation voltage APPLICATIONS ・For audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter
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2SA900
O-126
2SC1568
-500mA
-50mA
2SA900
2SC1568
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2SA0900
Abstract: 2SA900 2SC1868
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 16.0±1.0 M Di ain sc te on na tin nc ue e/ d • Low collector-emitter saturation voltage VCE(sat)
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2SA0900
2SA900)
2SC1868
O-126B
2SA0900
2SA900
2SC1868
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2SA900
Abstract: 2SC1568
Text: SavantIC Semiconductor Product Specification 2SA900 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1568 ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier PINNING PIN DESCRIPTION 1
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2SA900
O-126
2SC1568
-500mA
-50mA
2SA900
2SC1568
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Untitled
Abstract: No abstract text available
Text: , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA900 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO=-18V(Min) • Good Linearity of I>E • Low Collector Saturation Voltage
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2SA900
2SC1568
O-126
-50mA
-50mA;
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2SA0900
Abstract: 2SA900 2SC1868
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 11.0±0.5 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink
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2SA0900
2SA900)
2SC1868
O-126B
2SA0900
2SA900
2SC1868
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2SC1568
Abstract: 2SA900
Text: SavantIC Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING
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PDF
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2SC1568
O-126
2SA900
500mA
-50mA
200MHz
2SC1568
2SA900
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Audio Output Transistor Amplifier
Abstract: 2SA900 2SC1568
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS
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PDF
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2SA900
2SC1568
-50mA
-50mA;
Audio Output Transistor Amplifier
2SA900
2SC1568
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink
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2SA0900
2SA900)
2SC1868
O-126B
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow
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2SA0900
2SA900)
2SC1868
O-126B
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2sc1589
Abstract: 2SC1502 2SC1583 2SC1575 2SC1508 2sc1589 equivalent 2SC1598 2SC1528 2SC1588 2SC1591
Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) 2SC1501 (V) Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE fab/ft* VCE Ic (ºC) (MHz) (V) (mA) (mA) (mW) 300 5 100 2SC1503 50 3A 2SC1504 400 6 2SC1505 300 7 200 2SC1506 300 7 200
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2SC1501
2SC1503
2SC1504
2SC1505
2SC1506
2SC1507
2SC1508
2SC1509
2SC1510
2SC1511
2sc1589
2SC1502
2SC1583
2SC1575
2SC1508
2sc1589 equivalent
2SC1598
2SC1528
2SC1588
2SC1591
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2N5655
2N5656
2N5657
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2N5657 equivalent
2SA1046
BU326
BU108
BU100
2SC2331 Y
tip47 419
2N3792 application notes
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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BD157
BD158
BD159
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJE494
2SC1419
BD 804
2SD675
MJE104
BD581
BD135 CURVES
MJ1000
DTS-4041
2N5037
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2N6609
2N3773)
2N6667
2N6668
220AB
2N6387,
2N6388
2SD669 equivalent
BD801
BDY29 equivalent
BU108
2SC2080
2SD436
2N6021
BD345
tip122 D-PAK package
2SD544
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204S60
Abstract: 2SC1568 2SA900 2SC15
Text: Power T ransistors 2SC15Ó8 2SC1568 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Am plifier for Low Voltage Supply Com plem entary Pair with 2SA900 • Features • Low collector-emitter saturation voltage VcEcsa» • High performance at low supply voltage
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2SC15Ã
2SC1568
2SA900
O-126
bR32flS2
lb351
bT32fl52
001b352
204S60
2SC1568
2SA900
2SC15
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BC132A
Abstract: 2SA900 2SC1568
Text: PANASONIC INDL/ELEKiSENI} 7SC D J t^32flS4 ÜODfl?! 1 "|T •_T- ys.-i7 S 2 A 9 '> U 2SA900 P N P x hf $ 4- '> t \/ ~f \s — i~ f l2 /S i P N P Epitaxial Planar Power Amplifier > ~fl) S > $ U/ Complementary Pair with 2SC1568 • 4# ^ / F e a t u r r e s
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bc132AS4
2SA900
2SC1568
2SC1568
O-126
O-126
BC132A
2SA900
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2SA900
Abstract: 2SC1568
Text: Power Transistors 2SA900 2SA900 Silicon PNP Epitaxial Planar Type P ackage Dim ensions A F Pow er A m plifier C om plem entary Pair with 2 S C 1 568 Unit ! mm • Features • Low co llector-em itter saturation voltage V c e i s » i i • TO-126 package, no insulator needed w hen fixing to a heat sink
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2SA900
2SC1568
O-126
200MHz
2SA900
2SC1568
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2SA900
Abstract: 2SC1568
Text: AOK AOK Semiconductor Product Specification 2SA900 S ilicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SC1568 • Low collector saturation voltage APPLICATIONS • For audio frequency power amplifier PINNING PIN DESCRIPTION
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OCR Scan
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PDF
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2SA900
O-126
2SC1568
-50mA
-500mA
2SC1568
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2SA900
Abstract: 2SC15 2SC1568
Text: Power T ransistors 2SC15Ó8 2SC1568 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Am plifier for Low Voltage Supply Com plem entary Pair with 2SA900 • Features • Low collector-em itter saturation voltage V cE (.t> • High perform ance a t low supply voltage
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PDF
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2SC15Ã
2SC1568
2SA900
O-126
bR320S2
2SA900
2SC15
2SC1568
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la 7610
Abstract: 2SA900 2SC1568
Text: Power T ransistors 2SA900 2SA900 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC1568 •Features • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e V Unit ! mm 3.2 ±0.2 c e i s» i i mt • T O -1 2 6 p ack ag e , no in s u la to r n e e d e d w h e n fixing to a h e a t sink
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2SA900
2SC1568
O-126
la 7610
2SA900
2SC1568
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2sa899
Abstract: 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
Text: - 16 - Ta=25£C, *EP(âTc=25t M 2SA847A 2SA854 2SA854S 2SA872 2SA872A 2SA874 2SA874M 2SA879 2SA881 2SA885 2SA8S6 2SA887 2SA893 2SA893A 2SA898 2SA899 2SA900 2SA904A 2SA913 2SA913A 2SA914 2SA915 2SA916 2SA921 2SA929 2SA930 2SA933 2SA933LN 2SA 933S 2SA933SU
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Ta-25t)
2SA847A
ZSA854
2SA854S
2SA872
2SA872A
2SC1980
2SA921
2SA929
2SA930
2sa899
2SC1904
2SA904A
2SA933LN
2sc2673
2SA898
2SA887
2SA881
2SA93
2sc1846
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