2SB1018 Search Results

2SD1411

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1411 INDUSTRIAL APPLICATIONS Unit in n HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .J± Q 2 FEAT U R E S : . Low Saturation Voltage : v CE sat = 0-5V(Max.) at Ic=4A . Complementary to 2SB1018 MAXIMUM RATINGS (Ta=25°C)

Contextual Info: 2SB1018 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. PO W ER AMPLIFIER APPLICATIONS. • • • High Collector Current : I q = —7A Low Collector Saturation Voltage : v CE sat = -0.5V (M ax.) at Ic = -4 A

2SB1018

Abstract: 2SD1411
Contextual Info: JMnic Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications ・High current switching applications

2sb1018

Abstract: 2SD1411 2sB101
Contextual Info: Inchange Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications

D1411A

Abstract: 2SB1018A 2SD1411A
Contextual Info: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)

B1018A

Abstract: B1018 2SD1411A 2SB1018A
Contextual Info: 2SB1018A 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB1018A 通 信 工 業 用 ○ 大電力スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = − 7 A • コレクタ飽和電圧が低い。

2SB1018A

Abstract: 2SD1411A
Contextual Info: SavantIC Semiconductor Product Specification 2SB1018A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High collector current ·Low collector saturation voltage ·Complement to type 2SD1411A APPLICATIONS ·Power amplifier applications ·High current switching applications

pnp 4A switching

Abstract: 2SB1018 2SD1411
Contextual Info: SavantIC Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1411 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING

B1018a

Abstract: b1018 2SB1018A 2SD1411A
Contextual Info: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)

TE2555

Abstract: 20AS 2SB1018A 2SD1411 2SD1411A
Contextual Info: 2SD1411A TOSHIBA TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 411 A HIGH CURRENT SW ITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • Low Saturation Voltage : V q ^ s a t “ 0.5V (Max.) at Iq = 4A Complementary to 2SB1018A M A X IM U M RATINGS (Ta = 25°C)

D1411A

Abstract: 2SD1411A 2SB1018A D1411
Contextual Info: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Maximum Ratings (Tc = 25°C)

2sb1018

Abstract: tag c9 240
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1018 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 1Q.3MAX. 03.g±ag FEATURES: . High Collector Current : Ic =-7A . Low Collector Saturation Voltage : vCE sat =-0-5v(Max-) at IC=-4A

2SB1013

Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
Contextual Info: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018

D1411A

Contextual Info: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)

Contextual Info: TOSHIBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 0 1 8A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS PO W ER AM PLIFIER APPLICATIONS • • • High Collector Current : Iq = —7A Low Collector Saturation Voltage

2SB1018

Contextual Info: V U zi > P N P = S f f i f ^ P C d J ï t 2SB1018 o^ Œ x f i ï X i ' If iI i : mm o 10.3M AX. ; ic = _ 7A =¡ U '/ ? ê â f f i ' S J ±  î i S : V '0 : V CE (sat) = - 0 .5 V ( f t * ) d c = - 4 A ) 2 S D 1 4 1 1 1 3 > 7 ‘ ') X > ? ') h zt¿ni t o

ze 003 ic

Abstract: c 1027 transistor 2SB1018A 2SD1411A PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A TV-2000
Contextual Info: T O S H IB A 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 018A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 • High Collector Current : Ic = —7 A J •

B1018a

Abstract: b1018 2SB1018A 2SD1411A
Contextual Info: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)

Contextual Info: TO SHIBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB1018A HIGH CURRENT SWITCHING APPLICATIONS PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm 10 + 0.3 —I High Collector Current : I q = —7A

ze 003 ic

Abstract: 2SB1018A 2SD1411A cc 1029
Contextual Info: TO SH IBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 018A Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 10 ±0.3 r • • • High Collector Current : Ic = —7 A Low Collector Saturation Voltage

B1018A

Abstract: B1018
Contextual Info: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)

D1411A

Abstract: 2SB1018A 2SD1411A
Contextual Info: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Ta = 25°C)

2SA101S

Abstract: 2SA933LN 2SA970 2sa977 2SB927 2SA562TM 2SA914 2SA1783 2SA1232 Toshiba 2SB754
Contextual Info: - m « Type No. a € Manuf. s -E SANYO TOSHIBA 2SA 1124 fé T 2SA 1125 . të T 2SA 1127- fé T 2SA1783 2SA1015 2SA 1128 K T 2SB698 2SA562TM 2SA 1129 a a 2SB919 2SB1018 2SA 1133 „ fâ T 2SA1208 S ÍL HITACHI # ± ¡I FUJITSU T MATSUSHITA 2SB921L 2SA933LN

2SB1018A

Abstract: 2SD1411A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.