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D1411A Abstract: 2SB1018A 2SD1411A Text: D1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)	Original	PDF	2SD1411A 2SB1018A D1411A 2SB1018A 2SD1411A
D1411A Abstract: 552a 2SB1018A 2SD1411A Text: D1411A 東芝トランジスタシリコンNPN三重拡散形 D1411A 通信工業用 ○ 大電流スイッチング用 ○ 電力増幅用単位: mm • 許容コレクタ電流が大きい。 : IC = 7 A • コレクタ飽和電圧が低い。	Original	PDF	2SD1411A 2SB1018A 2-10R1A D1411A 552a 2SB1018A 2SD1411A
D1411A Abstract: 2SD1411A 2SB1018A D1411 Text: D1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Maximum Ratings (Tc = 25°C)	Original	PDF	2SD1411A 2SB1018A 2-10R1A D1411A 2SD1411A 2SB1018A D1411
D1411A Abstract: No abstract text available Text: D1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)	Original	PDF	2SD1411A 2SB1018A 2-10R1A D1411A
D1411A Abstract: 2SB1018A 2SD1411A Text: D1411A 東芝トランジスタシリコンNPN三重拡散形 D1411A 通信工業用 ○ 大電流スイッチング用 ○ 電力増幅用単位: mm • 許容コレクタ電流が大きい。 : IC = 7 A • コレクタ飽和電圧が低い。	Original	PDF	2SD1411A 2SB1018A 2-10R1A 20070701-JA D1411A 2SB1018A 2SD1411A
D1411A Abstract: 2SB1018A 2SD1411A Text: D1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SD1411A 2SB1018A D1411A 2SB1018A 2SD1411A