2SB1237 Search Results

2sb1237

Contextual Info: ROHM 4GE CO L T D D • TflS ûW |Q 9 M S B1RHI1 2SB909M/2SB1237 7 = 2 7 -2 J h 7 > V ^ 5 / T ransistors " 2S! DÜ QS S 0 3 1 77 ^ ^ U“ ^ PNP V U a > K 7 > V 7 ^ /M edium Power Amp. Epitaxial Planar PNP Silicon Transistors ' ÿ f-J f^ ^ H /D im e n s io n s Unit : mm

2SB1237

Abstract: TRansistor 2SB1237 data 2SA1515S 2SD1858 SC-72
Contextual Info: Medium Power Transistor 32V,1A 2SA1515S / 2SB1237 Dimensions (Unit : mm) 2.5 + − 0.2 6.8 + − 0.2 0.9 3Min. 3+ − 0.2 (15Min.) Structure Epitaxial planar type PNP silicon transistor 2SB1237 2+ − 0.2 0.45 +0.15 −0.05 2.5 +0.4 −0.1

2SB1237

Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

transistor Ic 1A datasheet NPN

Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

d1664

Abstract: Transistor 1501 2sb1237
Contextual Info: Transistors Medium Power Transistor -32V, -1A 2SB1132/2SA1515S/2SB1237 •F e a tu re s 1) • E x te rn a l dim ensions (Units: mm) LOW VcE(satl. VcE(sat) = - 0 .2 V (Typ.) 2SA1515S 2SB1132 4 S+0.2 (Ic /le = -5 0 0 m A /- 5 0 m A ) 5 - 0.1 16 2) C om plim ents 2S D 1664/2S D 1858.

2SB1237

Abstract: 2SD1858 Transistor 2SD1858
Contextual Info: Medium Power Transistor 32V, 1A 2SD1858 Dimensions (Unit : mm) Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1237 2.5 + − 0.2 0.9 4.4 + − 0.2 6.8 + − 0.2 0.5 + − 0.1 (1) (2) 14.5 + − 0.5 1.0 Structure

2SB1132

Abstract: 2SB1237 2SA1515S 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SD1664 2SB1132 transistor
Contextual Info: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

rohm 2sd1664

Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

2SD1858

Abstract: 2SB1132 2SB1237 2SD1664
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

2SB1237

Abstract: 5009 BF 146 Datasheet 5009 2Sb1237 model Q2SB1237
Contextual Info: SPICE PARAMETER 2SB1237 by ROHM TR Div. * 2SB1237 PNP BJT model * Date: 2006/11/15 .MODEL 2SB1237 PNP + IS=300.00E-15 + BF=211.92 + VAF=100 + IKF=5.5783 + ISE=300.00E-15 + NE=1.5009 + BR=15.974 + VAR=100 + IKR=17.146 + ISC=1.0298E-12 + NC=1.1959 + NK=.8198

Contextual Info: Transistors Medium Power Transistor {-32 V, -1A 2SB1132/2SA1515S/2SB1237 ►External dimensions Units: mm) •F e a tu re s 1) LOW VcE(sat). VcE(satj = -0 .2 V (Typ.) (Ic/ I b = -5 0 0 m A /-5 0 m A ) 2) Compliments 2S D 1664/2S D 1858. •S tru ctu re

2sB1237 transistor

Abstract: 2SB1237 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100
Contextual Info: 2SB1132 / 2SA1515S / 2SB1237 Transistors Medium Power Transistor −32V,−1A 2SB1132 / 2SA1515S / 2SB1237 zExternal dimensions (Unit : mm) 2SB1132 4+ − 0.2 1.0 + − 0.2 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2

Contextual Info: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

2SD1858

Abstract: Transistor 2SD1858
Contextual Info: 2SD1858 Transistor, NPN Features Dimensions Units : mm • available in ATV TV2 package • • large power in a compact package: Pc = l W low collector saturation voltage, typically V CE(sat) = 0.15 V at Iq/I b = 500 mA/50 mA • complementary pair with 2SB1237

2SB1237

Abstract: 2sB1237 transistor 2sb transistor Transistor 2SD1858
Contextual Info: 2SB1237 Transistor, PNP Features • available in ATV TV2 package • high power: Pq = 1W • low collector saturation voltage, typically VCE sat = -0.2 V at lc/lB = -500 mA/-50 mA • complementary pair with 2SD1858 Applications • medium power amplifier

2sb1237

Abstract: 2sb909m 2SD1225
Contextual Info: 2SB909M/2SB1237 h -7 > V 7 , $ / I ransistors 2SB909M 2SB1237 i b : £ * 7 ' > 7 0U /U - : i- J F 2 P N P '> > ; = ! > h 7 > v ^ ^ /Medium Power Amp. Epitaxial Planar PNP Silicon Transistors • W f i^ ä lS I/D im e n s io n s U nit : mm h -7 > V 1 ) P c = 1 W t * # i'0

ATIC 59 C1

Abstract: e01n
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Low VcE(sat) = 0.15V (typical). (I c / I b = 500m A/50m A) 2) Complements the 2SB 1132/2SB1237. •S tru ctu re Epitaxial planar type

2SB1237

Abstract: 2SB909M 2SD1225M 2SD1225 10X10 2SD1858 P01W l10x10
Contextual Info: ROHM CO LTD h 7 > v' 7 îî 2 9 S B 4GE D . • 7020^ 2SB909M/2SB1237 7= 27-2 J / T ransistors 9 M • Ä w / G 0 0 S S G 3 S ■ RHM /Medium Power Amp. Epitaxial Planar PNP Silicon Transistors • ^ • J f i'^ '^ O / D im e n s io n s U n it : m m h ■7

Contextual Info: 2SB1237 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA MEDIUM POWER TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR Features. * Low VCE,;^, , VCE^ggjj =-0.2V Typ.) (Ic/Ib=-500mA/-50mA) * Complement to 2SD1858 ABSOLUTE M AXIMUM RATINGS at Tinr*=25°C

2SD1225M

Abstract: 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9
Contextual Info: 2SD1225M/2SD1858 £ / J ransistors h 7 > v ROHM CO LTD 4 2S D 1225M 2S D 1858 T> m É S a 3 S a • R H v ' J a > h 7 > v X N ^ 4 , ^JiMlîlffl/M edium Power Amp. 7^27-2 ] Epitaxial Planar NPN Silicon Transistors VhMVlV’J i-r • WM■^■^0/Dimensions Unit : mm

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

cd player circuit diagram

Abstract: HSOP28 vcd player circuit diagram cd player HSOP-28 thermal 2SB1237 HSOP-28 ML1469 block diagram of cd player T16M
Contextual Info: ML1469 ML1469 4-channel BTL driver for CD players ™ Application ™ Features ‹ CD player ‹ VCD player ‹ DVD player z z z z z Built in 3.3V V33 or 5.0V (V50) Voltage regulator Built in general purpose operational amplifier

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

Contextual Info: N ~7 > y 7 $ /Transistors 2SD1225M/2SD1858 '> 7 ^ 7 ° U - : J - B N P N y 'J=]> h 7 > y ^ ^ 2SD1225M 4i f,Bc 02^ 7* iillliffl/M e d iu m Power Amp. 2SD1858 Epitaxial Planar N PN Silicon Transistors SO- >4 VT.\' vjl - 7- • y |- fj\r > S 0 /D |m n s|or>s U n it: mm)