2SB1254 Search Results

2SB1254

Abstract: 2SD1894
Contextual Info: Product Specification www.jmnic.com 2SD1894 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SB1254 APPLICATIONS

Contextual Info: Power Transistors 2SB1254 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1894 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE

T0220

Abstract: BDT62C 2SB1647 BC516 BCV26 BD678 BD680 BDX47 BSP61 T0-220
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: BC516 BCV26 MPSA64 BDX47 BSP61 TIP117 BD678 BD680 BD680A BD682 MJF127 TIP125 TIP127 2SB1624 2SB1020 2SB1254

2SB1254

Abstract: 2SD1894
Contextual Info: JMnic Product Specification 2SB1254 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SD1894 APPLICATIONS ・Power amplification

2SB1254

Abstract: 2SD1894
Contextual Info: SavantIC Semiconductor Product Specification 2SB1254 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Optimum for 60W HiFi output ·High foward current transfer ratio ·Low collector saturation voltage ·Complement to type 2SD1894 APPLICATIONS

2SD1894

Abstract: 2SB1254
Contextual Info: Power Transistors 2SD1894 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1254 Unit: mm ● ● 0.7 Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V

2SB1254

Abstract: 2SD1894
Contextual Info: Power Transistors 2SD1894 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1254 Unit: mm ● ● 0.7 Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V

Contextual Info: Power Transistors 2SD1894 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1254 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE

2SB1254

Abstract: 2SD1894
Contextual Info: Inchange Semiconductor Product Specification 2SB1254 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SD1894

Contextual Info: Power Transistors 2SD1894 2SD1894 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1254 Unit .’ mm tO 4 -r • O ptim um fo r 60W hi-fi o u tp u t • H igh D C c u r re n t gain Iife : 5000~30000

2SB1254

Abstract: 2SD1894 RB1000
Contextual Info: Power Transistors 2SD1894 2S D 1894 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1254 U n it .'m m 5 2max. ^3.2 . 15.5m ax. . • Features 6.9mm. *1 • Optimum for 60 W hi-fi output • High DC cu rre n t gain

2SB1254

Abstract: 2SD1894
Contextual Info: Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1894 Unit: mm ● ● 0.7 Optimum for 60W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE sat : < –2.5V

2SB1254

Abstract: 2SD1894
Contextual Info: Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1894 Unit: mm ● ● 0.7 Optimum for 60W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE sat : < –2.5V

Contextual Info: 2SB1254P Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)7 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)160 h(FE) Min. Current gain.8k

Contextual Info: Power T ransistors 2SB1254 2SB1254 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Unit m Power Amplifier Complementary Pair with 2SD 1894 15 .5 max. 5 2max 1- /3 ,2 6.9m m . • Features • • • • Optimum for 60W hi-fi output

2SB1254

Abstract: 2SD1894
Contextual Info: Inchange Semiconductor Product Specification 2SD1894 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1254 APPLICATIONS ・Power amplification ・Optimum for 60W high-fidelity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1894 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1254 5.0±0.2 (0.7) 15.0±0.3 (3.2) 21.0±0.5 16.2±0.5 • Absolute Maximum Ratings TC = 25°C

2SB1254

Abstract: 2SD1894
Contextual Info: Power Transistors 2SB1254 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1894 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 • Absolute Maximum Ratings TC = 25°C 10.9±0.5 Parameter

2SB1254

Abstract: 2SD1894
Contextual Info: Power Transistors 2SD1894 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1254 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 • Absolute Maximum Ratings TC = 25°C 10.9±0.5 Parameter

2SB1254

Abstract: 2SD1894
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1894 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1254 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5)

2SB1254

Abstract: 2SD1894
Contextual Info: Power Transistors 2SB1254 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1894 5.0±0.2 0.7 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

pnp 222A

Abstract: 2SB1154 2SB1254 2SD1705
Contextual Info: Power Transistors 2SB1154 2SB1154 Silicon PNP Epitaxial Planar Type Power Switching Complementary Pair with 2S D 1705 Package Dimensions . - U n it : mm 5.2m ax. . 15.5m ax. • Features s “ ^ 3 .2 6.9m in. I- • Low collector-eim itter saturation voltage VcEtsatj

2SB1254

Abstract: 2SD1894
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD1894 APPLICATIONS