BC516 Search Results

BC516

Abstract: bc517 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1999 Apr 23 2004 Nov 05 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA

BC516

Contextual Info: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V -10 V Collector Current

bc516

Abstract: bc517 BC517 data sheet
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 16 1999 Apr 23 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA

T0220

Abstract: BDT62C 2SB1647 BC516 BCV26 BD678 BD680 BDX47 BSP61 T0-220
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: BC516 BCV26 MPSA64 BDX47 BSP61 TIP117 BD678 BD680 BD680A BD682 MJF127 TIP125 TIP127 2SB1624 2SB1020 2SB1254

BC516

Abstract: BC516 equivalent transistor BC516 bc517 SC-43A bC516 transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC516 PNP Darlington transistor Product data sheet Supersedes data of 1999 Apr 23 2004 Nov 05 NXP Semiconductors Product data sheet PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA

BC516 equivalent

Abstract: str 6707 datasheet str 6707 str 6707 datasheet bc517 StR 40000 BC517 data sheet darlington pnp DATASHEET OF IC 733 PO 903
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification PNP Darlington transistor

Contextual Info: SEMICONDUCTOR BC516 T E C H N I C A L DATA E PITA X IA L PLANAR PNP TRA N SIST O R G E N E R A L PU R PO SE HIGH D A RL IN G T O N TRA N SISTO R. DIM M ILLIM ETER S 4.70 MAX M A X IM U M RATING Ta=25°C 4.80 MAX 3.70 MAX CHARACTERISTIC Collector-Base Voltage

BC516

Contextual Info: BC516 BC516 PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TA=25°C unless otherwise noted

Contextual Info: BC516 J V_ SILICON PLANAR DARLINGTON TRANSISTOR P-N-P s ilic o n p la n a r d a rlin g to n tra n s is to r in a p la s tic T O 9 2 p a cka g e . N -P-N c o m p le m e n t is B C 517. Q U IC K R E F E R E N C E D A T A - v CE0 m a x. 30 V C o lle c to r-b a s e v o lta g e o pen e m itte r

BC516 equivalent

Abstract: transistor BC516 BC516
Contextual Info: BC516 PNP Silicon Darlington Transistor Collector Base Emitter 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage

Contextual Info: N AUER PHILIPS/DISCRETE D bbSBTBl 0DE755b fiOO BC517 l IAPX SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic TO-92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A v CEO max. 30 V Collector-base voltage open emitter

Contextual Info: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.

Contextual Info: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATING Ta=25 2002. 11. 13 Revision No : 0 1/1

BC516

Abstract: BC517 HFE-30
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D • b b5 3T 31 G0E755b Ô00 L '' BC517 SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic T O -92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A

bc516

Abstract: transistor BC516 transistor 257
Contextual Info: Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 emitter • Very high DC current gain (min. 30000). 2 base 3 collector APPLICATIONS • Where very high amplification is required.

Contextual Info: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N E K MAXIMUM RATING Ta=25℃ G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V -10 V Collector Current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC516 TRANSISTOR PNP 1.COLLECTOR FEATURES z High DC Current Gain z High Collector Current 2.BASE 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BC516 equivalent

Abstract: BC516
Contextual Info: BC516 BC516 PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TA=25°C unless otherwise noted

BC516

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC516 PNP Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 16 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES

Contextual Info: BC517 _ SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar d a rlin g to n transistor in a plastic TO 92 package. P-N-P com plem ent is BC516. Q UICK REFERENCE D A T A v CEO max. Collector-base voltage open em itter 30 V v CBO max. 40 V

BC516

Abstract: hFE kec BC516 equivalent
Contextual Info: SEMICONDUCTOR BC516 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 016 1 2 K BC516 2. Marking 3 4 No. 2003. 12. 11 Item Marking Description Device Name BC516 BC516 Lot No. 016 KEC K KEC CORP. hFE Grade - - Revision No : 0 Year 0~9 : 2000~2009

BC517

Abstract: BC516 bc516 micro electronics
Contextual Info: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS J The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.

MN2488

Abstract: T0220 T0126 MJ11033-MOT 2SD2390 mn2488 pnp BCV27 BCV47 BD678 BSP61
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no HanpflweHMro Kofl: BCV27 MPSA64 BC516 BD675A BD678 BSP61 TIP125 BCV47 BD648 BD680 BD680A MJ2501 2N6287 2SB1020 BD682 BD712 BD902 BDV64B BDW84C

tr bc548

Contextual Info: This I Material tn □ tr t-1 fcH UJ □ Copyrighted □ Pro Electron Bipolar Devices V ’ ces * Device No. Case Style xa tn V CBO V Min V tceo V EBO (V) Min (V) Min 20 5 (continued) *CBO w »FE (nA)@ CB Max (V) h„ 50 85 60 5 500 1A 10 1 1 0.5 375 30K