2SB1417A Search Results

2SD2137A

Abstract: 2SB1417 2SB1417A 2SD2137
Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD2137 base voltage 2SD2137A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1417

Abstract: 2SB1417A 2SD2137 2SD2137A
Contextual Info: Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector to base voltage 2SB1417 Collector to emitter voltage 2SB1417 Rating −60 VCBO Unit −60 VCEO 2.5±0.1 1.05±0.1

2SB1417

Abstract: 2SB1417A 2SD2137 2SD2137A
Contextual Info: Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SB1417 base voltage 2SB1417A Collector to

2SB1417A

Abstract: 2SD2137A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)

2SB1417

Abstract: 2SB1417A 2SD2137
Contextual Info: Power T ransistors 2 S B 1 4 1 7 , 2SB1417, 2SB1417A 2 S B 1 4 1 7 A Silicon PNP Epitaxial Planar Type • P ackage Dim ensions Pow er Am plifier C om plem entary Pair with 2 S D 2 1 3 7 ■ Features • H igh DC c u r re n t gain I if e an d good lin earity

2SD2137

Abstract: pc 817 2SB1417 2SB1417A 2SD2137A
Contextual Info: 2SD2137, 2SD2137A Power Transistors 2SD2137, 2SD 2137A Silicon NPN Triple-Diffused Planar Type Power Amplifier C om plem entary Pair with 2SB1417, 2SB1417A • Features • H igh DC c u r re n t gain h H -F and good lin earity • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VtEcsao)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO

2SD2137A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1417A

Abstract: 2SD2137A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)

2SB1417

Abstract: 2SB1417A 2SD2137 2SD2137A
Contextual Info: Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector to base voltage 2SB1417 Collector to emitter voltage 2SB1417 Rating −60 VCBO Unit −60 VCEO 2.5±0.1 1.05±0.1

Contextual Info: Power T ransistors 2SB1417, 2SB14Í7A 2SB1417, 2SB1417A Silicon PNP Epitaxial Planar Type • Package Dimensions Power Amplifier Complementary Pair with 2SD2137 ■Features • High D C current gain Iife and good linearity • Low collector-em itter saturation voltage (VCE<sat>)

2SB1417A

Abstract: 2SD2137A
Contextual Info: Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −80 V Collector-emitter voltage (Base open)

2SB1417

Abstract: 2SB1417A 2SD2137 2SD2137A
Contextual Info: Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type Unit: mm 5.0±0.1 1.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector to base voltage 2SB1417 Collector to emitter voltage 2SB1417 Rating −60 VCBO Unit −60 VCEO

2sd2137

Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 VCBO 2SD2137A Unit 60 V 2.5±0.1 0.65±0.1 0.35±0.1 1.05±0.1 VEBO V Peak collector current

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)

2SB1417A

Abstract: 2SD2137A
Contextual Info: Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 6 V Collector current

2SB1417A

Abstract: 2SD2137A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SD2137

Abstract: 2SB1417 2SB1417A 2SD2137A
Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and