2SD2137A Search Results

Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A

2SD2137A

Abstract: 2SB1417 2SB1417A 2SD2137
Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD2137 base voltage 2SD2137A

2sd2137

Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 VCBO 2SD2137A Unit 60 V 2.5±0.1 0.65±0.1 0.35±0.1 1.05±0.1 VEBO V Peak collector current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137A TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z Low Collector to Emitter Saturation Voltage VCE(sat) z Allowing Automatic Insertion with Radial Taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1417A

Abstract: 2SD2137A
Contextual Info: Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 6 V Collector current

2SB1417A

Abstract: 2SD2137A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SB1417

Abstract: 2SB1417A 2SD2137 2SD2137A
Contextual Info: Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SB1417 base voltage 2SB1417A Collector to

2SD2137

Abstract: 2SB1417 2SB1417A 2SD2137A
Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A

2SB1417A

Abstract: 2SD2137A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SB1417A

Abstract: 2SD2137A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)

2SD2137

Abstract: pc 817 2SB1417 2SB1417A 2SD2137A
Contextual Info: 2SD2137, 2SD2137A Power Transistors 2SD2137, 2SD 2137A Silicon NPN Triple-Diffused Planar Type Power Amplifier C om plem entary Pair with 2SB1417, 2SB1417A • Features • H igh DC c u r re n t gain h H -F and good lin earity • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VtEcsao)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO

2SD2137

Abstract: 2SB1417 2SB1417A 2SD2137A
Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A

2SD2137A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1417

Abstract: 2SB1417A 2SD2137 2SD2137A
Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 5.0±0.1 • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 2SD2137A 2SD2137A Emitter to base voltage

2SB1417A

Abstract: 2SD2137A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)

Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 2.5±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE sat

2SD2172

Abstract: 2SD2165 2SD2152 2SD2133 2SD2134 2SD2135 2SD2136 2SD2137 2SD2137A 2SD2138
Contextual Info: - 282 - W c k & fà l a = 2 b V , * m t l c = 2 h aC M 2SD2133 2SD2134 2SD2135 2SD2136 2SD2137 2SD2137A 2SD2138 2SD2138A 2SD2139 2SD2140 2SD2144S 2SD2145 2SD2145M 2SD2148 oc*noi »n 2SD2150 2SD2151 2SD2152 2SD2154 2SD2156 2SD2156A 2SD2157 2SD2157A 2SD2158

2SB1417A

Abstract: 2SD2137A
Contextual Info: Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −80 V Collector-emitter voltage (Base open)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and