2SB647 Search Results

2Sb647a

Abstract: 2sb647
Contextual Info: 2SB647 / 2SB647A PNP General Purpose Transistors P b Lead Pb -Free 2 1 3 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 120 V Emitter-Base Voltage VEBO

2SD667

Abstract: 2SD667A Hitachi DSA00108
Contextual Info: 2SD667, 2SD667A Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings Ta = 25°C Item Symbol 2SD667 2SD667A

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Low Frequency Power Amplifier Complementary Pair with 2SB647/A Epoxy meets UL 94 V-0 flammability rating

2sb647

Contextual Info: MCC TM Micro Commercial Components 2SB647 A -B 2SB647(A)-C 2SB647-D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Epoxy meets UL 94 V-0 flammability rating

2SB647C

Abstract: 2SB647 2SB647AC 2SB647A
Contextual Info: 2SB647, 2SB647A Silicon PNP Epitaxial REJ03G0648-0200 Previous ADE-208-1025 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter

2SB647AC

Abstract: 2SB647C 2SB647DTZ-E 2SB647 2SB647A 2SB647A equivalent 2SB647CTZ-E PRSS0003DC-A
Contextual Info: 2SB647, 2SB647A Silicon PNP Epitaxial REJ03G0648-0200 Previous ADE-208-1025 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter

2SD667A

Abstract: 2SD667AC
Contextual Info: 2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES   Low Frequency Power Amplifier Complementary Pair with 2SB647A A D B K E CLASSIFICATION OF hFE 1

2sd667

Abstract: Hitachi DSA002756 2sd667 2sb647
Contextual Info: 2SD667, 2SD667A Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline 2SD667, 2SD667A Absolute Maximum Ratings Ta = 25°C Item Symbol 2SD667 2SD667A Unit Collector to base voltage VCBO 120 120 V

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92L TRANSISTOR NPN FEATURES z Low frequency power amplifier z Complementary pair with 2SB647/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sd667 2sb647

Abstract: 2SD667 2SD667 equivalent Hitachi DSA0076 2SD667A
Contextual Info: 2SD667, 2SD667A Silicon NPN Epitaxial ADE-208-1137 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings (Ta = 25°C)

2SD667

Abstract: 2sd667 2sb647 transistor 2SD667 2sb647 2sd667 2SD667A 2SB647
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92L TRANSISTOR NPN FEATURES z Low frequency power amplifier z Complementary pair with 2SB647/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB647

Abstract: 2SB647A 2SB647A equivalent
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB647/2SB647A TO-92MOD TRANSISTOR PNP FEATURE Power dissipation PCM: 1. EMITTER 2. COLLECTOR 0.9 W (Tamb=25℃) Collector current -1 A ICM: Collector-base voltage

SB647

Abstract: 647A
Contextual Info: H ITACH I 2SB647, 2SB647A SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD667/A JL I 710 1 Hmmcr 2 C o i k c io r y Dinotasi «* io mm> (JEDEC TO-92 MOD. I ABSOLUTE MAXIMUM RATINGS <Ta=25*C) Item 2SB 647 S y m b o l^ MAXIMUM COLLECTOR DISSIPATION

2sd667

Abstract: 2sd667 2sb647 transistor 2sd667 2sb647 2sd667 2Sd667a 2SD667 TRANSISTOR TO-92L TO 92L NPN Transistor
Contextual Info: 2SD667/2SD667A TO-92L Transistor NPN TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 7.800 8.200 3. BASE 1 Features — — 2 3 0.600 0.800 Low frequency power amplifier Complementary pair with 2SB647/A 0.350 0.550 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sb647

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB647/2SB647A ＴＯ－９２ＭＯＤ TRANSISTOR（ PNP ） FEATURE Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM: -1 A Collector-base voltage

2sd667

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92MOD TRANSISTOR NPN FEATURES z Low frequency power amplifier z Complementary pair with 2SB647/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • x 2SD667L NPN Plastic-Encapsulate Transistor Low Frequency Power Amplifier Complementary Pair with 2SB647/A

HF 331 transistor

Contextual Info: MCC TM Micro Commercial Components 2SB647 A -B 2SB647(A)-C 2SB647-D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Epoxy meets UL 94 V-0 flammability rating

Contextual Info: UTC 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL APPLICATION * Low frequency power amplifier 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL  DESCRIPTION The UTC 2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier.  APPLICATION * Low frequency power amplifier

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB647/2SB647A TO-92MOD TRANSISTOR PNP FEATURE Power dissipation PCM: 1. EMITTER 2. COLLECTOR 0.9 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage

2sd667

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92MOD TRANSISTOR NPN FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SB647/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB647/2SB647A TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SD667/A

2SB647

Abstract: 2SB647A equivalent transistor 2sd667 2SB647A To-92mod Hitachi DSA00335 2SD667A
Contextual Info: 2SB647, 2SB647A Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings Ta = 25°C Item Symbol 2SB647 2SB647A