92MOD Search Results

2sc2655

Abstract: 1345 NPN
Contextual Info: 2SC2655 NPN General Purpose Transistors P b Lead Pb -Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS（Tamb=25℃ Symbol Parameter Test unless otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO

2SD756

Abstract: 2sd756a 2SB716 Hitachi DSA0097 2SD756 equivalent 2SB715 2SB716A 2SD755
Contextual Info: 2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SB715, 2SB716 and 2SB716A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD755, 2SD756, 2SD756A Absolute Maximum Ratings Ta = 25°C

2SC3243

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC3243 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage

2Sb647a

Abstract: 2sb647
Contextual Info: 2SB647 / 2SB647A PNP General Purpose Transistors P b Lead Pb -Free 2 1 3 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 120 V Emitter-Base Voltage VEBO

TO-92MOD

Abstract: 2SD2213
Contextual Info: 2SD2213 Silicon NPN Epitaxial Low Frequency Power Amplifier Features TO-92MOD • Large hFE at low current operation. 2000, at IC = 0.15A Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————–

2SD974

Abstract: DSA003638
Contextual Info: 2SD974 Silicon NPN Epitaxial ADE-208-1141 Z 1st. Edition Mar. 2001 Application • Power switching • TV horizontal deflection output Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD974 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SD667

Abstract: 2SD667A Hitachi DSA00108
Contextual Info: 2SD667, 2SD667A Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings Ta = 25°C Item Symbol 2SD667 2SD667A

2sd1978

Abstract: 2SB1387 DSA003638
Contextual Info: 2SD1978 Silicon NPN Epitaxial, Darlington ADE-208-1162 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1387 Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 3 2 1 ID 2 kΩ (Typ) 0.5 kΩ (Typ) 1

2sc2230

Abstract: 2SC2230A 2SC2230 GR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC2230/2230A TRANSISTOR NPN 1. EMITTER FEATURE z High voltage: VCEO=180V(2SC2230A) z High DC Current Gain 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sc2655

Abstract: equivalent 2SC2655 2SA1020
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020

2SC2703

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2703 TO-92MOD TRANSISTOR NPN FEATURES High DC Current Gain: hFE=100-320 1. EMITTER 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

2SC1383

Abstract: 2SA0683 2SA0684 2SC1384 2SC1383 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER

2SC2235

Abstract: transistor 2sC2235 2SA965
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2235 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Complementary to 2SA965 2. COLLECTER 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) B Symbol VCBO B

3DG2482

Contextual Info: 3DG2482 i 3DG2482fèNPNM^ 3'hljj$IMm %Sfr&ÿnT; TO-92MOD 2 2.1 Pä#^W Äl7E- Tamb= 25°C fr fv PH # W£ M T O 3OO v Ä ^ f ö - S fö ^ H VCBO 3OO v Ä fe fö -£ Ä fe H VCEO y v Ä M fö-S fö * H VEBO 1OO mA Ic f€iftïtl$ Ta=25 °C O.9 W Ptot 15O °c

2SB562

Abstract: 2SD468 ADE-208-1024 Hitachi DSA0076
Contextual Info: 2SB562 Silicon PNP Epitaxial ADE-208-1024 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD468 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB562 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

2SA1160

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD KSA931 TRANSISTOR PNP 1.EMITTER FEATURE y Low Frequency Amplifier y Medium Speed Switching 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA965 TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Complementary to 2SC2235 z Power Amplifier Applications 2. COLLECTOR 3. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSC2328A ＴＯ－９２ＭＯＤ TRANSISTOR（ NPN ） 1.EMITTER FEATURE Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : 2 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSC2328A TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors BD034 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2.5 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSA910 TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z General Purpose Amplifier Transistor 2. COLLECTOR 3. EMITTER 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2229 TO – 92M TO – 92MOD TRANSISTOR NPN 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z High Breakdown Voltage z High Transition Frequency 2. COLLECTOR 3. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1020 TO-92MOD TRANSISTOR PNP FEATURES Power Amplifier Applications 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol 3. BASE Parameter