2SB766 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB766A PNP SILICON TRANSISTOR LOW FREQUENCY OUTPUT AMPLIFICATION „ FEATURES * Large collector power dissipation Pc. * Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB766 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z Large collector power dissipation PC z Complementary to 2SD874 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD874A SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A

Contextual Info: Transistor 2SD0874, 2SD0874A 2SD874, 2SD874A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) Unit: mm • Features Symbol Collector to 2SD0874 base voltage 2SD0874A Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0766, 2SB0766A (2SB766, 2SB766A) Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD0874 (2SD874), 2SD0874A (2SD874A) 4.5±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0766, 2SB0766A (2SB766, 2SB766A) Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD0874 (2SD874), 2SD0874A (2SD874A) 4.5±0.1

Contextual Info: Transistor 2SB0766, 2SB0766A 2SB766, 2SB766A Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD0874 (2SD874) and 2SD0874A (2SD874A) Unit: mm • Features (Ta=25˚C) 3 2 0.5±0.08 1 0.4±0.08 Collector to 2SB0766

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB766A PNP SILICON TRANSISTOR LOW FREQUENCY OUTPUT AMPLIFICATION  FEATURES * Large collector power dissipation Pc. * Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

2SB0766

Abstract: 2SB0766A 2SB766 2SB766A 2SD0874 2SD0874A 2SD874 2SD874A
Contextual Info: Transistor 2SB0766, 2SB0766A 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0874 (2SD874) and 2SD0874A (2SD874A) Unit: mm • Features Parameter Symbol Collector to 2SB0766 base voltage 2SB0766A

2SB766

Abstract: 2SB766A
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB766,2SB766A Features Large collector power dissipation PC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Absolute Maximum Ratings Ta = 25

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0874, 2SD0874A (2SD874, 2SD874A) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) Unit: mm • Features

Contextual Info: 2SB766A PNP EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 2 3 SOT-89 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter 1 Symbol Value Units Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage

2SB766A

Abstract: 2SD874A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD874A SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A z

2SB766A

Contextual Info: UTC 2SB766A PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY OUTPUT AMPLIFICATION FEATURES 1 *Large collector power dissipation Pc. *Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

2SB766A

Contextual Info: UTC 2SB766A PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY OUTPUT AMPLIFICATION FEATURES 1 *Large collector power dissipation Pc. *Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
Contextual Info: - « Type No. tt « Mamif. 2SB 1114 -• 2SB 1115 „ Hi TOSHIBA Z £ MITSUBISHI ZSA1213 2SB10Q1 2SB956 2SB1188 2SB1122 2SA12Q1 2SB1002 2SB766A 2SB1260 2SA1213 2SB1Q02 2SB766A 2SA1315 2SB1059 2SB621A 2SA1283 2SB1459 2SB621A 2SA1283 S S « 2SB 1117 ^ S « 2SB 1118

2SB0766

Abstract: 2SB0766A 2SB766 2SB766A 2SD0874 2SD0874A 2SD874 2SD874A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0766, 2SB0766A (2SB766, 2SB766A) Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD0874 (2SD874), 2SD0874A (2SD874A) 4.5±0.1

2SB766A

Abstract: sot-89 BQ 2SD874A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB766A SOT-89 TRANSISTOR PNP 1. BASE FEATURES z Large collector power dissipation PC z Complementary to 2SD874A 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: SMD Type Product specification 2SB766,2SB766A Features Large collector power dissipation PC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Absolute Maximum Ratings Ta = 25 Parameter

sot-89 Marking code BQ

Contextual Info: WILLAS FM120-M+ 2SB766A THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0766, 2SB0766A (2SB766, 2SB766A) Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD0874 (2SD874), 2SD0874A (2SD874A) 4.5±0.1

2SB766

Abstract: 2SB766A 2SD874 2SD874A
Contextual Info: Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A Unit: mm • Features Parameter Symbol Collector to 2SB766 base voltage 2SB766A Ratings VCBO Emitter to base voltage VEBO

2SB0766

Abstract: 2SB0766A 2SB766 2SB766A 2SD0874 2SD0874A 2SD874 2SD874A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0766, 2SB0766A (2SB766, 2SB766A) Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD0874 (2SD874), 2SD0874A (2SD874A) 4.5±0.1

2SD874A

Abstract: 2SD874 marking YQ 2SB766 2SB766A
Contextual Info: Transistor 2SD874, 2SD874A Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB766 and 2SB766A Unit: mm • Features Parameter 2SD874 base voltage 2SD874A Collector to 2SD874 Ratings Emitter to base voltage VEBO Peak collector current