2SB825 Search Results

2SD1061

Abstract: 2SB825 ICP12
Contextual Info: Ordering number:ENN687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications Package Dimensions • Universal high current switching as solenoid driving, high speed inverter and converter. unit:mm 2010C [2SB825/2SD1061]

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

2SB825

Abstract: 687G 2SD1061
Contextual Info: Ordering number:687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications Package Dimensions • Universal high current switching as solenoid driving, high speed inverter and converter. unit:mm 2010C [2SB825/2SD1061]

2SB825

Contextual Info: 2SB825 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

Contextual Info: O rdering num ber: E N 687G W 2SB825/2SD1061 N0.687G PNP/NPN Epitaxial Planar Silicon Transistors SANYO- i 50V/7A Switching Applications Use : Universal high current switching as solenoid driving, high speed inverter and converter. F eatu res • Low saturation voltage : VcE sat = (—)0.4Vmax.

2SB825

Abstract: 2SD1061
Contextual Info: JMnic Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SD1061 APPLICATIONS ・Universal high current switching as solenoid driving;high speed inverter and converter applications

2SB82

Abstract: 2SB825 2SD1061 687G
Contextual Info: Ordering n u m b e r :EN 687G 2SB825/2SD1061 PNP/NPN Epitaxial Planar Silicon Transistors 50V/7A Switching Applications Use : Universal high current switching as solenoid driving, high speed inverter and converter. F eatures • Low saturation voltage : VcE sat = (—)0.4Vmax.

2SD1061

Abstract: 2SB825
Contextual Info: SavantIC Semiconductor Product Specification 2SD1061 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Wide ASO safe operating area ·Complement to type 2SB825 APPLICATIONS ·Universal high current switching as

2SB825

Abstract: 2SD1061
Contextual Info: SavantIC Semiconductor Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter

2SB825

Abstract: 2SD1061
Contextual Info: Inchange Semiconductor Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SD1061 APPLICATIONS ・Universal high current switching as solenoid driving;high speed inverter

Inverter high voltage power transistor

Abstract: 2SB825 2SD1061
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB825 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1061

2SB833

Abstract: 2SB821 2SB817 2sb852k-a 2SB805 2SB806 2SB807 2SB808 2SB810 2SB811
Contextual Info: - 62 - Ta=25BC, *EnííTc=25?0 M 2SB805 2SB806 2SB807 2SB808 2SB810 2SB811 2SB814 2SB815 2SB816 2SB81T ¿¿DOIS 2SB821 2SB822 2SB824 2SB825 2SB826 2SB827 2SB828 2SB829 2SB831 2SB833 2SB834 2SB835 2SB837L 2SB837S 2SB841L 2SB841S 2SB849 2SB849A 2SB850 2SB850A

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

BE502

Contextual Info: n iT S U n i % E L E C T R IC CO LTD 4ÔE D b55G27S G0D157S TS4 • H£CJ_ MITSUMI MONOLITHIC IC V5<í-\{43 igHŒftJiîPffl/For Low Voltage Control Monolithic IC LVC531 L V C 5 3 1 tttB A \ ? K> A Ü J * E M c ? v h S ^ I E J ! - > y ? I C t L V C 531 is a type of m onolithic IC for constant voltage control

2SB553Y

Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SD313

Abstract: transistor 2sC3781 2SD1159 2sa128
Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used

SB145

Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used

toshiba 2SB755

Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Contextual Info: 50 - m. € £ Type No. 2SB 698 - Manuf. n = SANYO M. 2SA950 2SA952 2SA1232 * B ÍL 2SB817 2SB 700 - B ÍI 2SB817 2SB755 2SB 700A B AL 2SB817 2SB755 B ÍL 2SB755 B ÍL 2SB756 2SB 703 , 2SB 703A 2SB 705 2SB 710 tö T MATSUSHITA 2SA719 & — MITSUBISHI 2SA1398

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

80244C

Abstract: RCA1C11 2S8754 mj04 2S8999 BOT42C 2S8553
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 55 60 65 70 75 80 85 90 95 Max 15 15 15 15 15 15 15 20 25 25 75 75 75 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 100 100 100 120 120 120 120 120 120 40 55 120 15 15 20 20 40 40 200 160 240 6.0 6.0 6.0 6.0 6.0 6.0

2sa128

Contextual Info: í?/píVO Low-Saturat ion Vol tage Seri es T0“220, MF, ML Pack g > A p p l i c a t i o n s ♦ Relay drivers. * High-speed inverters. * Conve r te r s . * H igh-cu r ren t switchinf! F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * Fast switching

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf