2SB905 Search Results

2SB905 Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB905	Toshiba	Silicon PNP Transistor	Original	PDF	118.78KB	5
2SB905	Toshiba	PNP transistor	Original	PDF	213.23KB	5
2SB905	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	42.9KB	1
2SB905	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	106.03KB	2
2SB905	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	38.45KB	1
2SB905	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	112.57KB	1
2SB905	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	43.35KB	1
2SB905	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	76.75KB	1
2SB905	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	38.1KB	1
2SB905	Unknown	Cross Reference Datasheet	Scan	PDF	38.95KB	1
2SB905	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	33.9KB	1
2SB905	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	49.05KB	1
2SB905	Toshiba	Silicon PNP transistor for power amplifier applications	Scan	PDF	209.6KB	4
2SB905	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS)	Scan	PDF	210.4KB	4

2SB905-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	76.75KB	1
2SB905-R	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	76.75KB	1
2SB905-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	76.75KB	1

2SB905 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sd1220 Abstract: 2SB905 Contextual Info: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO	OCR Scan	2SD1220 2SB905 2sd1220	PDF
2SB905 Abstract: 2SD1220 Contextual Info: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220 2SB905 2SD1220	PDF
D1220 Abstract: 2sd1220 2SB905 Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 D1220 2sd1220 2SB905	PDF
B905 Abstract: SD1220 2SB905 Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage	Original	2SB905 SD1220 B905 SD1220 2SB905	PDF
D1220 Abstract: 2sd1220 2SB905 Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 D1220 2sd1220 2SB905	PDF
Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905	PDF
2SD1220 Contextual Info: 2SD1220- SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. Unit in mm . 6 8 MAX, FEATURES: CL6 MAX . . Complementary to 2SB905 Û8MAX. MAXIMUM RATINGS (Ta=25üC) SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2SD1220- 2SB905 200mA 2SD1220 2SD1220	PDF
B905 Abstract: SD1220 2SB905 Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage	Original	2SB905 SD1220 B905 SD1220 2SB905	PDF
D1220 Abstract: 2SB905 2SD1220 Contextual Info: 2SD1220 東芝トランジスタシリコンNPN三重拡散形 PCT方式 2SD1220 ○ 電力増幅用 • 単位: mm 2SB905 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C) 項目記号定格単位コレクタ • ベース間電圧	Original	2SD1220 2SB905 D1220 2SB905 2SD1220	PDF
2SD1220 Abstract: D1220 2SB905 Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 2SD1220 D1220 2SB905	PDF
Contextual Info: TOSHIBA 2SD1220 2 S D 1 220 T O SH IB A TRA N SISTO R PO W ER AM PLIFIER APPLICATIO NS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage	OCR Scan	2SD1220 2SB905	PDF
Contextual Info: TO SHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Colleetor-Emitter Voltage VCEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220	PDF
2SB905 Abstract: B905 2SD1220 Contextual Info: 2SB905 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SB905 ○ 電力増幅用 • 単位: mm 2SD1220 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C) 項目記号定格単位コレクタ • ベース間電圧	Original	2SB905 2SD1220 20070701-JA 2SB905 B905 2SD1220	PDF
2SB905 Abstract: 2SD1220 Contextual Info: TOSHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220 2SB905	PDF

2sd1220 Abstract: 2SB905 Contextual Info: 2SD1220 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 PO W ER AM PLIFIER APPLICATIONS • Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage	OCR Scan	2SD1220 2SB905 2sd1220	PDF
2SB905 Abstract: 2SD1220 Contextual Info: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220 2SB905	PDF
2sd1220 Abstract: 2SB905 Contextual Info: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO	OCR Scan	2SD1220 2SB905 2sd1220	PDF
2SB905 Contextual Info: SILICON PNP EPITAXIAL TYPE 2SB905 POWER AMPLIFIER APPLICATION. Unit in mm FEATURES : Cl6 MAX. . Complementary to 2SD1220 MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL Collector-Base Voltage RATING UNIT vCBO -150 V Collector-Emitter Voltage VcEO -150 V Emitter-Base Voltage	OCR Scan	2SB905 2SD1220 -10mA, -200mA -500mA, -50mA 2SB905	PDF
SD1220 Abstract: 2SB905 B905 Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage	Original	2SB905 SD1220 SD1220 2SB905 B905	PDF
Contextual Info: 2SD1220 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm 6.8MAX. FEATURES : . Complementary to 2SB905 n asíais MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 150 Collector-Emitter Voltage VCEO 150	OCR Scan	2SD1220 2SB905 200mA	PDF
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB905 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • Complementary to 2SD1220 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage	OCR Scan	-2SB905 2SD1220 2SB905	PDF
Contextual Info: 2SD1220 TOSHIBA 2 S D 1 220 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage	OCR Scan	2SD1220 2SB905	PDF
D1220 Abstract: 2sd1220 2SB905 Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 D1220 2sd1220 2SB905	PDF
Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage	Original	2SB905 SD1220	PDF

2SB905 Search Results

2SB905 Datasheets (17)

2SB905 Datasheets Context Search

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B905

D1220

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2SB905

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2SB905

2sd1220

2SB905

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D1220