2SD1220 Search Results

2SD1220 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SD1220	Kexin	Silicon NPN Epitaxial Transistor	Original	PDF	36.5KB	1
2SD1220	Toshiba	NPN Transistor	Original	PDF	190.98KB	5
2SD1220	TY Semiconductor	Silicon NPN Epitaxial Transistor - TO-252	Original	PDF	132.05KB	1
2SD1220	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	88.43KB	2
2SD1220	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	30.68KB	1
2SD1220	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	44.36KB	1
2SD1220	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	33.22KB	1
2SD1220	Unknown	Cross Reference Datasheet	Scan	PDF	41.78KB	1
2SD1220	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	33.9KB	1
2SD1220	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	49.05KB	1
2SD1220	Toshiba	Silicon NPN transistor for power amplifier applications	Scan	PDF	210.96KB	4

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Samtec Inc


Samtec Inc TW-20-02-S-D-122-026 - Bulk (Alt: TW-20-02-S-D-122-026) Free Sample
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2SD1220 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Transistors IC SMD Type Product specification 2SD1220 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15	Original	2SD1220 O-252 D1220	PDF
2sd1220 Abstract: 2SB905 Contextual Info: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO	OCR Scan	2SD1220 2SB905 2sd1220	PDF
2SB905 Abstract: 2SD1220 Contextual Info: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220 2SB905 2SD1220	PDF
D1220 Abstract: 2sd1220 2SB905 Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 D1220 2sd1220 2SB905	PDF
D1220 Abstract: 2sd1220 2SB905 Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 D1220 2sd1220 2SB905	PDF
Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905	PDF
2SD1220 Contextual Info: 2SD1220- SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. Unit in mm . 6 8 MAX, FEATURES: CL6 MAX . . Complementary to 2SB905 Û8MAX. MAXIMUM RATINGS (Ta=25üC) SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2SD1220- 2SB905 200mA 2SD1220 2SD1220	PDF
D1220 Abstract: 2SB905 2SD1220 Contextual Info: 2SD1220 東芝トランジスタシリコンNPN三重拡散形 PCT方式 2SD1220 ○ 電力増幅用 • 単位: mm 2SB905 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C) 項目記号定格単位コレクタ • ベース間電圧	Original	2SD1220 2SB905 D1220 2SB905 2SD1220	PDF
2SD1220 Abstract: D1220 2SB905 Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 2SD1220 D1220 2SB905	PDF
Contextual Info: TOSHIBA 2SD1220 2 S D 1 220 T O SH IB A TRA N SISTO R PO W ER AM PLIFIER APPLICATIO NS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage	OCR Scan	2SD1220 2SB905	PDF
Contextual Info: TO SHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Colleetor-Emitter Voltage VCEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220	PDF
2SB905 Abstract: B905 2SD1220 Contextual Info: 2SB905 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SB905 ○ 電力増幅用 • 単位: mm 2SD1220 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C) 項目記号定格単位コレクタ • ベース間電圧	Original	2SB905 2SD1220 20070701-JA 2SB905 B905 2SD1220	PDF
2SB905 Abstract: 2SD1220 Contextual Info: TOSHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220 2SB905	PDF
2sd1220 Abstract: 2SB905 Contextual Info: 2SD1220 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 PO W ER AM PLIFIER APPLICATIONS • Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage	OCR Scan	2SD1220 2SB905 2sd1220	PDF

2sd1220 Abstract: 2SB905 Contextual Info: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO	OCR Scan	2SD1220 2SB905 2sd1220	PDF
U2550 Abstract: 2sd122 Contextual Info: TOSHIBA 2SD1220 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 SD12 2 0 POWER AMPLIFIER APPLICATIONS. U nit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current !CBO E m itter Cut-off Current ÏEBO Collector-Emitter Breakdown	OCR Scan	2SD1220 200mA 500mA, U2550 2sd122	PDF
2SB905 Contextual Info: SILICON PNP EPITAXIAL TYPE 2SB905 POWER AMPLIFIER APPLICATION. Unit in mm FEATURES : Cl6 MAX. . Complementary to 2SD1220 MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL Collector-Base Voltage RATING UNIT vCBO -150 V Collector-Emitter Voltage VcEO -150 V Emitter-Base Voltage	OCR Scan	2SB905 2SD1220 -10mA, -200mA -500mA, -50mA 2SB905	PDF
D1220 Abstract: D122 2sd1220 Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Transistor 2SD1220 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1	Original	2SD1220 O-252 D1220 D1220 D122 2sd1220	PDF
Contextual Info: 2SD1220 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm 6.8MAX. FEATURES : . Complementary to 2SB905 n asíais MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 150 Collector-Emitter Voltage VCEO 150	OCR Scan	2SD1220 2SB905 200mA	PDF
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB905 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • Complementary to 2SD1220 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage	OCR Scan	-2SB905 2SD1220 2SB905	PDF
Contextual Info: 2SD1220 TOSHIBA 2 S D 1 220 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage	OCR Scan	2SD1220 2SB905	PDF
D1220 Abstract: 2sd1220 2SB905 Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 D1220 2sd1220 2SB905	PDF
Contextual Info: TOSHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220	PDF
D1220 Abstract: 2SD1220 2SB905 Contextual Info: 2SD1220 東芝トランジスタシリコンNPN三重拡散形 PCT方式 2SD1220 ○ 電力増幅用 • 単位: mm 2SB905 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C) 項目記号定格単位コレクタ • ベース間電圧	Original	2SD1220 2SB905 20070701-JA D1220 2SD1220 2SB905	PDF

2SD1220 Search Results

2SD1220 Datasheets (11)

2SD1220 Price and Stock

Samtec Inc TW-20-02-S-D-122-026

2SD1220 Datasheets Context Search

2sd1220

2SB905

D1220

D1220

2SD1220

D1220

2SD1220

2SB905

2SB905

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U2550

2SB905

D1220

D1220

D1220