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Toshiba America Electronic Components 2SB905-0-TE16L1,NQ
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Quest Components	2SB905-0-TE16L1,NQ		1,680			1 $13.5 10 $13.5 100 $13.5 1000 $6.75 10000 $6.75	Buy Now

2SB905 Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB905	Toshiba	Silicon PNP Transistor	Original	PDF
2SB905	Toshiba	PNP transistor	Original	PDF
2SB905	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SB905	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SB905	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB905	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB905	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB905	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB905	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB905	Unknown	Cross Reference Datasheet	Scan	PDF
2SB905	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SB905	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SB905	Toshiba	Silicon PNP transistor for power amplifier applications	Scan	PDF
2SB905	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS)	Scan	PDF

2SB905-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB905-R	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB905-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF

2SB905 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sd1220 Abstract: 2SB905 Contextual Info: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO	OCR Scan	2SD1220 2SB905 2sd1220	PDF
2SB905 Abstract: 2SD1220 Contextual Info: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220 2SB905 2SD1220	PDF
D1220 Abstract: 2sd1220 2SB905 Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 D1220 2sd1220 2SB905	PDF
B905 Abstract: SD1220 2SB905 Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage	Original	2SB905 SD1220 B905 SD1220 2SB905	PDF
D1220 Abstract: 2sd1220 2SB905 Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 D1220 2sd1220 2SB905	PDF
Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905	PDF
2SD1220 Contextual Info: 2SD1220- SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. Unit in mm . 6 8 MAX, FEATURES: CL6 MAX . . Complementary to 2SB905 Û8MAX. MAXIMUM RATINGS (Ta=25üC) SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2SD1220- 2SB905 200mA 2SD1220 2SD1220	PDF
B905 Abstract: SD1220 2SB905 Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage	Original	2SB905 SD1220 B905 SD1220 2SB905	PDF
D1220 Abstract: 2SB905 2SD1220 Contextual Info: 2SD1220 東芝トランジスタシリコンNPN三重拡散形 PCT方式 2SD1220 ○ 電力増幅用 • 単位: mm 2SB905 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C) 項目記号定格単位コレクタ • ベース間電圧	Original	2SD1220 2SB905 D1220 2SB905 2SD1220	PDF
2SD1220 Abstract: D1220 2SB905 Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 2SD1220 D1220 2SB905	PDF
Contextual Info: TOSHIBA 2SD1220 2 S D 1 220 T O SH IB A TRA N SISTO R PO W ER AM PLIFIER APPLICATIO NS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage	OCR Scan	2SD1220 2SB905	PDF
Contextual Info: TO SHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Colleetor-Emitter Voltage VCEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220	PDF
2SB905 Abstract: B905 2SD1220 Contextual Info: 2SB905 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SB905 ○ 電力増幅用 • 単位: mm 2SD1220 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C) 項目記号定格単位コレクタ • ベース間電圧	Original	2SB905 2SD1220 20070701-JA 2SB905 B905 2SD1220	PDF
2SB905 Abstract: 2SD1220 Contextual Info: TOSHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220 2SB905	PDF

2sd1220 Abstract: 2SB905 Contextual Info: 2SD1220 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 PO W ER AM PLIFIER APPLICATIONS • Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage	OCR Scan	2SD1220 2SB905 2sd1220	PDF
2SB905 Abstract: 2SD1220 Contextual Info: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage	OCR Scan	2SB905 2SD1220 2SB905	PDF
2sd1220 Abstract: 2SB905 Contextual Info: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO	OCR Scan	2SD1220 2SB905 2sd1220	PDF
2SB905 Contextual Info: SILICON PNP EPITAXIAL TYPE 2SB905 POWER AMPLIFIER APPLICATION. Unit in mm FEATURES : Cl6 MAX. . Complementary to 2SD1220 MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL Collector-Base Voltage RATING UNIT vCBO -150 V Collector-Emitter Voltage VcEO -150 V Emitter-Base Voltage	OCR Scan	2SB905 2SD1220 -10mA, -200mA -500mA, -50mA 2SB905	PDF
SD1220 Abstract: 2SB905 B905 Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage	Original	2SB905 SD1220 SD1220 2SB905 B905	PDF
Contextual Info: 2SD1220 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm 6.8MAX. FEATURES : . Complementary to 2SB905 n asíais MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 150 Collector-Emitter Voltage VCEO 150	OCR Scan	2SD1220 2SB905 200mA	PDF
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB905 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • Complementary to 2SD1220 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage	OCR Scan	-2SB905 2SD1220 2SB905	PDF
Contextual Info: 2SD1220 TOSHIBA 2 S D 1 220 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage	OCR Scan	2SD1220 2SB905	PDF
D1220 Abstract: 2sd1220 2SB905 Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage	Original	2SD1220 2SB905 D1220 2sd1220 2SB905	PDF
Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage	Original	2SB905 SD1220	PDF

2SB905 Search Results

2SB905 Price and Stock

Toshiba America Electronic Components 2SB905-0-TE16L1,NQ

2SB905 Datasheets (17)

2SB905 Datasheets Context Search

2sd1220

2SB905

D1220

B905

D1220

2SD1220

B905

D1220

2SD1220

2SB905

2SB905

2sd1220

2SB905

2sd1220

2SB905

SD1220

D1220