2SC1359 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1359 TRANSISTOR NPN 1. EMITTER FEATURES z Optimum for RF Amplification of FM/AM Radios. z High Transition Frequency fT. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC1359 C

Abstract: ic CD4081 pin diagram datasheet 2SA733 2SC1359
Contextual Info: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be

2SC1359 C

Abstract: 2SC1359
Contextual Info: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC1359 C

Abstract: 2SA0838 2SC1359
Contextual Info: Transistors 2SC1359 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA0838 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current

Contextual Info: Transistors 2SC1359 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA0838 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 M Di ain sc te on na

2SA838

Abstract: 2SA0838 2SC1359
Contextual Info: Transistors 2SA0838 2SA838 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC1359 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High transfer ratio fT 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

2SC1359

Abstract: 2SC1359 C 2SA838
Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm • Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. ■ Absolute Maximum Ratings Ta=25˚C Parameter

2SA838

Abstract: 2SA838 TRANSISTOR equivalent TRANSISTOR 2sa838 2SC1359 2SC135
Contextual Info: Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 High transition frequency fT. Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

2SA838

Abstract: 2SC1359
Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm 5.0±0.2 4.0±0.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5

Contextual Info: Transistors 2SA0838 2SA838 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC1359 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7±0.2 • High transfer ratio fT 12.9±0.5 0.7±0.1

2SC1359 C

Abstract: 2SA733 2SC1359
Contextual Info: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be

2SA838

Abstract: 2SA0838 2SC1359
Contextual Info: Transistor 2SA0838 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 5.1±0.2 • Features 0.7±0.2 High transition frequency fT. ■ Absolute Maximum Ratings 12.9±0.5 0.7±0.1 (Ta=25˚C)

2sc1424

Abstract: SC-5-1 2SC1457 2SC1507 2SC1324 2SC1336 2SC1345K 2SC1326 2SC1449 2SC1318A
Contextual Info: - 104 - m% * * Æ Î § Ta=25tC, ♦ EP(iTc=25‘C fi -t¡ m toi . *^fSU (V) 2SC1318A 2SC1324 2SC1326 2SC1336 2SC1342 2SC1343H 2SC1344 2SC1345 2SC1345K 2SC1359 2SC1360 2SC1360A 2SC1383 2SC1384 2SC1387 2SC1393 2SC1394 2SC1398 2SC1398A 2SC1413 2SC1413A 2SC1413AH

2SA838

Abstract: 2SA0838 2SC1359
Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA0838 2SA838 Unit: mm 5.0±0.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. • Absolute Maximum Ratings (Ta=25˚C) Parameter

Contextual Info: 2SC1359 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.220 h(FE) Max. Current gain.

2SC1359

Abstract: 2SC1359 C
Contextual Info: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC1359

Abstract: 2SC1359 C
Contextual Info: 2SC1359 0.03 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Optimum for RF Amplification of FM/AM Radios  High Transition Frequency fT TO-92 G

2SC1359 C

Abstract: 2SA0838 2SC1359 2SC135
Contextual Info: Transistors 2SC1359 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA0838 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 • Features 12.9±0.5

2SA838

Abstract: 2SA838 TRANSISTOR equivalent 2SA0838 2SC1359
Contextual Info: Transistor 2SA0838 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 High transition frequency fT. (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC2491

Abstract: 2SC319B 2SC748 2sc2550 2SC306 2SC1740 2sc2061 2SC2926 2SC1398 2SC1687
Contextual Info: 84 - S S! tt T y p e No. 2SC 292 « Manuf. = $ SANYO Ü S TOSHIBA t b B NEC ÍL HITACHI Ä ± iï FUJITSU fâ T MATSUSHITA 'J—— 2SC2497 2SC 293 ' J —— 2SC2497A 2SC 294 S S 2 SC2497A 2SC 295 a a S * h m MITSUBISHI □ — A ROHM 2 SC2497A 2SC 296 |_±iS

2SC3421

Abstract: 2sd526 2SC46C 2SC4614 2SD467 2SC3423 2SC503 2sc2233 2sc2061 2SC2235
Contextual Info: m % Type No. * 2SC 477 * 2SC 478 * 2SC 481 ' * 2SC 483 * 2SC m / * 2SC 485 . * 2SC 4ÖÖ *- 2SC * 2SC * 2SC * 2SC * 2SC * 2SC * 2SC * 2SC 2SC * * 489 490 491 / 492 493 X 494 z 1' 495 *' 436 - 1' 497 # 2SC 2SC * 2SC * 2SC 500 * 502 ^ 503 .r 504 Í * 505 *"•

2sc710

Abstract: 2sc1741 2SC366 2SC380 2sc944 2sC1674 2SC4641 2SC1815 2SC3393 2SC931
Contextual Info: - m € Type No. SANYO 2SC4641 S RH* •$. SIS* B t z i - H i ä drÜ 2SC3393 2SC3393 2SC4455 917 918 920 H 15 2SC2839 2SC 921 * 2SC 922 f 2SC 923 b B B B V m w. m. S «E -— 2SC2999 2SC2999 2SC4641 = H H * ;¥ # = = H ;¥ m n * 2SC 931 • 2SC 932 ^ 2SC 933 f-