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NEC Electronics Group 2SC2351-T1B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SC2351-T1B		3,716		7	1 - 10 $0.825 100 $0.3094 1000 $0.231 10000 $0.2145	Buy Now
Quest Components ()	2SC2351-T1B		1,394			1 $1.1 10 $1.1 100 $1.1 1000 $0.286 10000 $0.286	Buy Now
	2SC2351-T1B		654			1 $1.75 10 $1.75 100 $0.525 1000 $0.455 10000 $0.455	Buy Now
NEC Electronics Group 2SC2351T1B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SC2351T1B		818			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NEC Electronics Group 2SC2351-LF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SC2351-LF		65			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NEC Electronics Group 2SC2351-T1B(Q)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC2351-T1B(Q)		16,741			1 $0.74 10 $0.74 100 $0.74 1000 $0.74 10000 $0.222	Buy Now
NEC Electronics Group 2SC2351-T1B (R2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC2351-T1B (R2)		806			1 $2.205 10 $2.205 100 $0.6615 1000 $0.5733 10000 $0.5733	Buy Now

2SC235 Datasheets (82)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC235	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	62.43KB	1
2SC235	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	83.77KB	1
2SC235	Unknown	Cross Reference Datasheet	Scan	PDF	38.41KB	1
2SC235	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	104.88KB	2
2SC235	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	91.26KB	1
2SC235	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	118.36KB	1
2SC235	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	36.57KB	1
2SC2350	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	34.88KB	1
2SC2350	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	122.7KB	1
2SC2350	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	45.84KB	1
2SC2350	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	138.99KB	1
2SC2351	NEC	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD	Original	PDF	30.41KB	4
2SC2351	NEC	Semiconductor Selection Guide 1995	Original	PDF	3.25MB	226
2SC2351	NEC	Semiconductor Selection Guide	Original	PDF	3MB	399

2SC2351	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	34.88KB	1
2SC2351	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	122.7KB	1
2SC2351	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	95.75KB	2
2SC2351	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	45.74KB	1
2SC2351	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	45.84KB	1
2SC2351	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	138.99KB	1

2SC235 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC2351 Abstract: marking R2 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. @ f = 1.0 GHz • MAG 14 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS Units: mm +0.1 0.4 −0.05 2.8±0.2 +0.1 1.5	Original	2SC2351 2SC2351 marking R2	PDF
2SC2353 Abstract: VCB10 Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION The 2SC2353 is specially designed for use as VH F and UHF mixer in a tuner of T V receiver. The influence of mirror PACKAGE DIMENSIONS effect is little by balanced base. FEATURES in millimeters inches	OCR Scan	2SC2353 f-900 VcE-10 VCB10	PDF
2sc2358 Contextual Info: SavantIC Semiconductor Product Specification 2SC2358 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage,high speed APPLICATIONS ·Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications	Original	2SC2358 2sc2358	PDF
Contextual Info: SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • NF 1.5 dB TY P. ' f = 1 .0 G H z M AG 14 dB TV P. • f = 1.0 GHz in millimeters ABSOLUTE M AXIM UM RATINGS { T ,« 2 5 ° C	OCR Scan	2SC2351	PDF
transistor eb 2030 Abstract: 2SC2350 Contextual Info: 2SC2350 High Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor PACK A G E D IM E N S IO N S in m illim eters inches • Low Noise Figure: N F = 2 .3 d B T Y P . (f=500M H z) • High Maximum Available Gain: M AG = 17dB TY P . (f= 500M H z) z.5 ’ § ?	OCR Scan	2SC2350 transistor eb 2030 2SC2350	PDF
Contextual Info: 2SC2357 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)700 V(BR)CBO (V)1.0k I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SC2357	PDF
Contextual Info: 2SC2351 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12è V(BR)CBO (V)25 I(C) Max. (A)70m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)15	Original	2SC2351	PDF
Contextual Info: 2SC2352L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	2SC2352L	PDF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f= 1.0 GHz * MAG 14 dB TYP. f= 1.0 GHz PACKAGE DIMENSIONS Units: mm ABSOLUTE MAXIMUM RATINGS T a = 25 °C Collector to Base Voltage	OCR Scan	2SC2351	PDF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF • MAG 1.5 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS 14 dB TYP. @ f = 1.0 GHz U nits: m m 2 .8 ± 0.2 1.5 "3- Ò ABSOLUTE MAXIMUM RATINGS (T a = 25 °C)	OCR Scan	2SC2351	PDF
PR240 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f = 1.0 G H z * M AG 14 dB TYP. f = 1.0 G H z PACKAGE DIMENSIONS Units: mm 2 .8± 0.2 1.5 .0.65-0-5 ABSOLUTE MAXIMUM RATINGS (T a = 25 °C)	OCR Scan	2SC2351 PR240	PDF
2SC2352 Abstract: SC-43A transistor GC Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION \ 2SC2352 The 2SC2352 is an NPN silicon epitaxial transistor intended PACKAGE DIMENSIONS for use as a VHF mixer in a tuner of a TV receiver. The in millimeters inches device features are high conversion gain and low distortion.	OCR Scan	2SC2352 2SC2352 sc-43a to-92 SC-43A transistor GC	PDF
Contextual Info: 2SC235 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)100 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.8 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.20Ž	Original	2SC235 Freq120M	PDF
Contextual Info: 2SC2359 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SC2359 time300nÃ	PDF

Contextual Info: 2SC2353 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	2SC2353	PDF
2SA1424 Abstract: NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT _0.2 2.8+ Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424. _0.2 2.9+ Symbol Rating Unit Collector to Base Voltage	Original	2SA1978 2SC2351. 2SA1424. 2SA1424 NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent	PDF
2SC2351 Abstract: RF TRANSISTOR 10GHZ low noise 10GHz mixer 10GHz RF mixer marking r2 RF TRANSISTOR 10GHZ RF POWER TRANSISTOR NPN UHF transistor GHz rf ghz transistor marking r3 RF TRANSISTOR Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION •Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz ·High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS ·Designed for use as UHF oscillators and a UHF mixer in a	Original	2SC2351 S21e2 2SC2351 RF TRANSISTOR 10GHZ low noise 10GHz mixer 10GHz RF mixer marking r2 RF TRANSISTOR 10GHZ RF POWER TRANSISTOR NPN UHF transistor GHz rf ghz transistor marking r3 RF TRANSISTOR	PDF
jb transistor Abstract: 2SC2356 374C Contextual Info: h'UdlTSU niC R O ELEC T R O N IC S "37 DE \| 3 7 4 ‘ì 7 t . E □□□1751 FMICROELECTRONICS U JIT S U 2SC2356 SILICON HIGH SPEED TRIPLE DIFFUSED ^ NPN POWER TRANSISTOR 10 AMP, 400 VOLT r- J3-/J 3 7 4 9 7 1>2 FUJITSU MICROELECTRONICS 37C 01751 ABSOLUTE MAXIMUM RATINGS	OCR Scan	374T7bE 2SC2356 O-220 jb transistor 2SC2356 374C	PDF
2SC2351 Contextual Info: 2SC2351 High Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS in m illim eters inches • Low Noise Figure: NF=1.5 dB TYP. (f= 1.0 GHz) • High Maximum Available Gain: MAG=14dB TYP. (f—1.0 GHz) 2.5 *8 ! {0 098) 0 5 l 8f\|	OCR Scan	2SC2351 2SC2351	PDF
Contextual Info: 2SC2358 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.0k I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SC2358	PDF
Contextual Info: 2SC2354 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SC2354 Freq10M	PDF
Contextual Info: 2SC2356 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SC2356	PDF
Contextual Info: 2SC2350 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	2SC2350	PDF
2sc2358 Contextual Info: Inchange Semiconductor Product Specification 2SC2358 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications	Original	2SC2358 2sc2358	PDF

2SC235 Search Results

2SC235 Price and Stock

NEC Electronics Group 2SC2351-T1B

NEC Electronics Group 2SC2351T1B

NEC Electronics Group 2SC2351-LF

NEC Electronics Group 2SC2351-T1B(Q)

NEC Electronics Group 2SC2351-T1B (R2)

2SC235 Datasheets (82)

2SC235 Datasheets Context Search

2SC2351

2SC2353

2sc2358

transistor eb 2030

PR240

2SC2352

2SA1424

2SC2351

jb transistor

2SC2351

2sc2358