VCB10 Search Results

MPSA63

Abstract: MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62 mpsa64
Contextual Info: TOSHIBA TRANSISTOR MPSA62, 63, 64 SILICON PNP EPITAXIAL TYPE PCT PROCESS DESIGNED FOR PRE-AMPLIFIER INPUT APPLICATIONS REQUIRING HIGH INPUT IMPEDANCE. FEATURES : • High DC Current Gain I I C-10«A : hFE- 5000(Min.) MPSA63 10000(Min.) MPSA64 20000(Min.) MPSA62

2SC1553

Abstract: 2SC1553A 2sc15 scjti SC1553 nf1sd S211
Contextual Info: TOSHIBA BT OISCRETE/OPTOJ D E ~ | ‘iD Î T E S 0 D 0 G 0 4 B 1 9 0 9 7 2 5 0 T O S H I B A D I S C R E T E /O P T O 39C 00431 _ •_ T - O U H F Band L o v N o i a e A m p l i f i e r A p p l i c a t i o n s

2SA1015

Abstract: 2SA10150 2SA1015 0
Contextual Info: 4 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS ''" M i t t - ZSClölO AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES : • High Voltage and High Current. VCEO=50V (Min.), Ic=150mA (Max.)

Contextual Info: TPC6701 TOSHIBA TPC6701 TOSHIBA Taransistor Silicon N P N Epitaxial Type Unit: mm O High-Speed Switching Applications Olnverter ^0 3:0.1 Lighting Applications I n c lu d in g 2 u n i t s in a sm all s u r f a c e mounted package High DC c u r r e n t g a i n : h F E ~ 4 0 0 ~ 1 0 0 0 lc=0. 1A

MM4048

Abstract: BC406 L17D D29A10 D29A12 D29A7 D29A8 D29A9 MA7809 SA2255
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

TA-2946

Abstract: transistor TE 2162
Contextual Info: Ordering number : ENN6793 | NPN Epitaxial Planar Silicon Transistor CPH5504 High-Current Switching Applications Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions u n it: mm 2162 Features • Composite type with 2 NPN transistors in one

Contextual Info: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.

Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * FZT855 - Very low saturation voltage Excellent hFEspecified up to 10 Amps

PN3563

Abstract: PN5130 BOX69477 PN5132
Contextual Info: PN 3563 PN 5130 PN 5132 NPN SILICON RF SMALL SIGNAL TRANSISTORS CASE TO-92A THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS. PN3565 PN5130 PN5132 «V SBC PN3563 PN5130 ' PN5132 ABSOLUTE MAXIMUM RATINGS Collector-Base ^oltage

2N5550 EBC

Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
Contextual Info: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

bc727

Abstract: bc728
Contextual Info: THE BC727, BC728 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR IJNIYERSAL APPLICATIONS. THE BC727,BC728 ARE COMCOMPLEMENTARY TO THE NPN TYPE BC737, BC738 RESPECTIVELY. CASE TO-92A "EBC ABSOLUTE MAXIMUM RATINGS

185AJJ006

Abstract: solitron devices SOLITRON Solitron Transistor
Contextual Info: SOLITRON DEVICES 561 863 5946 11/21/02 18:18 0 :02/08 N0:092 SOLITRON DEVICES, INC. PRODUCT SPECIFICATION SOLITRON P/N: 183AJJ006 SDT7AQ6 CUSTOMER P/N: REV. ORIGINATOR : GENERAL PURPOSE REFERENCE SPEC: REV: PKG; PARTS DWG: EDS NO: DESIGN LIMITS: REFERENCE DEVICE:

2SB996

Abstract: 2SD1356 300X300X8
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA '• DE J T □=!7 S S 0 □ □ □ 7 ci54 S | ~ 5òC '0 7 9 Z* <D I S CR ET E/O PT O SILICON NPN T R IP LE 'D IFFU SE D TVPË; r t.u -r-> ? 1 ; POWER AMPL-IFIER .APPLICATIONS. Unit in Iran m g FEATURES i V •»„

Contextual Info: i TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE " « n - M 'M l ZSB14Z9 POWER AMPLIFIER APPLICATIONS. Unit in mm 20.5MAX . Complementary to 2SD2155 f m . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta-25°C

Contextual Info: TOSHIBA {DI S CR ET E/ OPT O} 3T Dlf| TCHVESD □□□□431 9 0 9 7 2 5 0 T O S H I B A D I S C R E T E / O P T O 39C 0 0 4 3 1 r - o 3 / uhf# ««««« o r a O UHF Band Low N o i s e A m p l i f i e r A p p l i c a t i o n s O High Speed S w i t c h i n g A p p l i c a t ions

MP5001

Contextual Info: SILICON NPN/PNP EPITAXIAL TYPE POWER TRANSISTOR 5 IN 1 MP5001 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS. • Package with Heat Sink Isolated to Lead. . High Collector Power Dissipation. : P t =10W • High Collector Current

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR SS9015 LOW FREQUENCY, LOW NOISE AMPLIFIER TO -92 • Complement to SS9014 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5086 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collsctor-Emltter Voltage: Vao =50V • Collector Dissipation: Pe (max)=625mW

MA7809

Abstract: 2S711 SA2713 L17D STL51 BC412 KIS434 NS435 NS436 NS437
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

QM30DY-2H

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE i QM30DY-2H * Ic * V cex * hFE Collector current. 30A Collector-emltter voltage. 1000V DC current gain.75 * Insulated Type

Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENTj HIGH PERFORMANCE TRANSISTORS ISSUE 2 - NOVEMBER 1995_;_ ' FEATURES * Extremely lo w equivalent on-resistance; RCHsat) * 6 Am ps continuous current * * * Up to 20 A m ps peak current Very lo w saturation voltage

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *

ztx658

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ISSU E 1 - APRIL 94_ FEATURES * 400 Volt V CE0 * 0.5 A m p continuous current * Ptot=1W att A P P L IC A T IO N S * Telephone dialler circuits E-Lina T 092 Compatible