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    Toshiba America Electronic Components 2SC3421-O(Q)

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    2SC3421 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3421 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: driver; Part Number: 2SA1358 Original PDF
    2SC3421 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC3421 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3421 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3421 Unknown Cross Reference Datasheet Scan PDF
    2SC3421 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3421 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3421 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3421 Unknown Scan PDF
    2SC3421 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3421 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3421 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3421 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3421 Toshiba Silicon NPN transistor for audio frequency power amplifier applications Scan PDF
    2SC3421 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SC3421 Toshiba TO-126 Package Transistor Scan PDF
    2SC3421-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3421O Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC3421-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3421Y Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF

    2SC3421 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors TO- 126C 2SC3421 TRANSISTOR NPN 1. BASE FEATURES z Complementary to 2SA1358 z Suitable for Driver of 60 to 80 Watts Audio Amplifier z High Breakdown Voltage 2. COLLECTOR


    Original     		PDF O-126C 2SC3421 2SA1358 100mA 500mA

    2sa1358

    Abstract: TRANSISTOR A1358 A1358
    Text: 2SA1358 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1358 Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage Unit: mm Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SA1358 2SC3421 2sa1358 TRANSISTOR A1358 A1358

    c3421 transistor

    Abstract: C3421 TOSHIBA c3421 transistor c3421 2SA1358 2SC3421
    Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SC3421 2SA1358 c3421 transistor C3421 TOSHIBA c3421 transistor c3421 2SA1358 2SC3421

    TRANSISTOR A1358

    Abstract: 2SA1358 a1358 transistor A1358 2SC3421
    Text: 2SA1358 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1358 Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SA1358 2SC3421 TRANSISTOR A1358 2SA1358 a1358 transistor A1358 2SC3421

    2sa1358

    Abstract: 2SC3421
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1358 DESCRIPTION •High Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min) ·Complement to Type 2SC3421 APPLICATIONS ·Designed for audio frequency power amplifier applications.


    Original     		PDF 2SA1358 -120V 2SC3421 -500mA; -50mA -500mA -120V; 2sa1358 2SC3421

    2SA1358

    Abstract: 2sa135 Audio Output Transistor Amplifier 2SC3421 2SC342
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1358 DESCRIPTION •High Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min) ·Complement to Type 2SC3421 APPLICATIONS ·Designed for audio frequency power amplifier applications.


    Original     		PDF 2SA1358 -120V 2SC3421 -500mA; -50mA -500mA -120V; 2SA1358 2sa135 Audio Output Transistor Amplifier 2SC3421 2SC342

    2SC3421

    Abstract: Audio Output Transistor Amplifier audio NPN 2SA1358
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3421 DESCRIPTION •High Collector-Emitter Breakdown Voltage : V BR CEO= 120V(Min) ·Complement to Type 2SA1358 APPLICATIONS ·Designed for audio frequency power amplifier applications.


    Original     		PDF 2SC3421 2SA1358 500mA; 500mA 2SC3421 Audio Output Transistor Amplifier audio NPN 2SA1358

    c3421 transistor

    Abstract: c3421 2SC3421 transistor c3421 2SA1358 C3421 TOSHIBA
    Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SC3421 2SA1358 c3421 transistor c3421 2SC3421 transistor c3421 2SA1358 C3421 TOSHIBA

    2SA1358

    Abstract: A1358 2SC3421
    Text: 2SA1358 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1358 ○ 電力増幅用励振段増幅用 単位: mm • 2SC3421 とコンプリメンタリになります。 • PO = 60~80 W メインアンプドライバー段に最適です。


    Original     		PDF 2SA1358 2SC3421 20070701-JA 2SA1358 A1358 2SC3421

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1358 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)cEo=-120V(Min) • Complement to Type 2SC3421


    Original     		PDF 2SA1358 -120V 2SC3421 O-126 -10mA; -500mA; -50mA -500mA -120V;

    2sa1358

    Abstract: TRANSISTOR A1358 a1358 transistor
    Text: 2SA1358 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1358 Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SA1358 2SC3421 2sa1358 TRANSISTOR A1358 a1358 transistor

    c3421 transistor

    Abstract: c3421
    Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SC3421 2SA1358 c3421 transistor c3421

    c3421 transistor

    Abstract: c3421 2SA1358 2SC3421
    Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3421 2SA1358 c3421 transistor c3421 2SA1358 2SC3421

    c3421

    Abstract: 2SC3421 2SA1358 6080w
    Text: 2SC3421 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3421 ○ 電力増幅用励振段増幅用 単位: mm • 2SA1358 とコンプリメンタリになります。 • PO = 60~80 W メインアンプドライバ段に最適です。


    Original     		PDF 2SC3421 2SA1358 c3421 2SC3421 2SA1358 6080w

    2SA1358

    Abstract: 2SC3421 A1358 TRANSISTOR A1358
    Text: 2SA1358 TO SH IBA 2 S A 1 358 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 8.3 MAX. • • • 0 £ i± cn Complementary to 2SC3421 Suitable for Driver of 60 to 80 Watts. High Breakdown Voltage.


    OCR Scan     		PDF 2SA1358 2SC3421 2SA1358 A1358 TRANSISTOR A1358

    2SA1358

    Abstract: 2SC3421
    Text: 2SC3421 T O S H IB A 2SC3421 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO FREQUENCY PO W ER A M PLIFIER APPLICATIONS 8.3 MAX. • • • 5.8 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage


    OCR Scan     		PDF 2SC3421 2SA1358 2SA1358 2SC3421

    2sa1358

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1358 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 03.1 ¿Oil . Complementary to 2SC3421 . Suitable for Driver of 60 to 80 Watts. 3- . High Breakdown Voltage. 1.0MAX. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		PDF 2SA1358 2SC3421 -10mA, -100mA -500mA, -50mA -500mA -100mA 30LLEGT0R-EMITTER 2sa1358

    2SC3421

    Abstract: 2SA1358 B1030 AX1030
    Text: 2SC3421 TO SHIBA 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • • 53.1 ±0.1 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage


    OCR Scan     		PDF 2SC3421 2SA1358 2SC3421 2SA1358 B1030 AX1030

    2SA1358

    Abstract: 2SC3421
    Text: 2SC3421 TO SH IBA 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • • 43.1 ±0.1 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage


    OCR Scan     		PDF 2SC3421 2SA1358 2SA1358 2SC3421

    2sc3421

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3421 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . Complementary to 2SA1358 . Suitable for Driver of 60 to 80 Watts Audio Amplifier . High Breakdown Voltage MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC3421 2SA1358 100mA 500mA, 500mA 2sc3421

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 1 mm M T • U nit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 8.3 M AX. 53.1 ± 0 . 1 S.8 Complementary to 2SA1358 Suitable for Driver of 60 to 80 W atts Audio Amplifier High Breakdown Voltage


    OCR Scan     		PDF 2SC3421 2SA1358

    2SC1815

    Abstract: 2SC5400 2sc5290 2sc458 nec 2SC923 2SC1675 2SC945 2SC3421 2SC520A 2SC519A
    Text: - 90 - a s s T y p e No. M « Manuf. SANYO 3E TOSHIBA m b NEC B HITACHI ÍL * ± FUJITSU ffl fó T MATSUSHITA * 2SC 5 1 5A M 2 2SC2242 * 2S0 516 M $ 2SC3421 2SC2497 * * * 2SC 516A * 2: 2SC3421 2 SC2497A M ~S. 2SC2075 2SC 518 % 2 2SD718 2SD1270 * 2SC 518A %


    OCR Scan     		PDF 2SC2242 2SC3421 2SC2497 2SC2497A 2SC2075 2SD718 2SD1270 2SC1815 2SC5400 2sc5290 2sc458 nec 2SC923 2SC1675 2SC945 2SC3421 2SC520A 2SC519A

    Untitled

    Abstract: No abstract text available
    Text: 2SA1358 SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. U n it in min 6.3 M A X . • • • Complementary to 2SC3421 Suitable for Driver of 60 to 80 Watts. High Breakdown Voltage. MAXIMUM RATINGS (Ta = 25°C) SYMBOL • RATING


    OCR Scan     		PDF 2SA1358 2SC3421 --100mA --500mA, --50mA -500m -100m --10V,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3421 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATIONS. • • • m RATING 120 120 5 1 100 1.5 10 150 -5 5 - 1 5 0 UNIT V V V A mA 0.75 ± 0.15 2.3 ±0.1 2.3 ± 0.1 _•


    OCR Scan     		PDF 2SC3421 2SA1358