2SC387 Search Results
2SC387 Price and Stock
New Jersey Semiconductor Products Inc 2SC3870TRANSISTOR |
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2SC3870 | 96 |
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NEC Electronics Group 2SC387ARF SMALL SIGNAL BIPOLAR TRANSISTOR |
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2SC387A | 56 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SC387 | 29 |
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2SC387 Datasheets (79)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC387 | Fuji-SVEA | Japanese 2S Transistor Cross Reference Datasheet | Scan | 71.89KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC387 | Unknown | The Japanese Transistor Manual 1981 | Scan | 104.71KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC387 | Unknown | Discontinued Transistor Data Book 1975 | Scan | 204.42KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC387 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 41.76KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC387 | Unknown | Basic Transistor and Cross Reference Specification | Scan | 53.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC387 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 89.49KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC387 | Unknown | Japanese Transistor Cross References (2S) | Scan | 40KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC387 | Unknown | Cross Reference Datasheet | Scan | 36.74KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC387 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 160.12KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC387 | Unknown | The Transistor Manual (Japanese) 1993 | Scan | 101.9KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC387 | Unknown | Transistor Substitution Data Book 1993 | Scan | 50.3KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC387 | Unknown | Shortform Transistor Datasheet Guide | Short Form | 98.74KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC387 | Unknown | Vintage Transistor Datasheets | Scan | 51.55KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3870 |
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Silicon NPN triple diffusion type | Original | 59.07KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC3870 | Unknown | The Transistor Manual (Japanese) 1993 | Scan | 101.9KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3870 | Unknown | Transistor Substitution Data Book 1993 | Scan | 36.53KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3870 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 47.16KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3870 | Unknown | Japanese Transistor Cross References (2S) | Scan | 36.88KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3871 |
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Silicon NPN triple diffusion planar type Power Transistor | Original | 59.34KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3871 | Unknown | The Transistor Manual (Japanese) 1993 | Scan | 101.9KB | 2 |
2SC387 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SC3875
Abstract: ALY TRANSISTOR 2SC3875-GR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr 2SC3875-Y Elite Enterprises
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2SC3875 OT-23 150mW 100mA, 100MHz 2SC3875-G 2SC3875-Y 2SC3875-GR 2SC3875 ALY TRANSISTOR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr Elite Enterprises | |
2SC3871Contextual Info: Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage |
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2SC3871 2SC3871 | |
2SC3875Contextual Info: ST 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. |
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2SC3875 100mA, 2SC3875 | |
2SC3876Contextual Info: ST 2SC3876 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y and according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. |
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2SC3876 100mA 400mA 100mA, 2SC3876 | |
2SC3875Contextual Info: ST 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. |
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2SC3875 100mA, 2SC3875 | |
2SC3876Contextual Info: ST 2SC3876 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y and according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. |
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2SC3876 100mA 400mA 100mA, 2SC3876 | |
2SC387Contextual Info: Power Transistors 2SC3871 2SC3871 Silicon P N P Trip le-D iffu sed Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching U n it I : • Features 4 .4 m a x . • High speed switching • High collector-base voltage 2.9max, V cbo |
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2SC3871 sc387 T32fiS2 2SC387 | |
Contextual Info: Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.7±0.1 10.0±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage |
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2SC3871 | |
2SC288a
Abstract: MMBR2857 TP390 TP393 S763T 40518 BF378 2N5652 s763 72 sot 23
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2SC3874Contextual Info: JMnic Product Specification 2SC3874 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・High speed switching ・High VCBO ・Wide area of safe operation APPLICATIONS ・For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 |
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2SC3874 2SC3874 | |
2SC3872
Abstract: 001695
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OCR Scan |
2SC3872 bT32flSB 2SC3872 001695 | |
Contextual Info: Power Transistors 2SC3873 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0±0.3 11.0±0.2 ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 |
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2SC3873 | |
Contextual Info: Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage |
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2SC3874 | |
2SC1815
Abstract: 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458
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2SC944 2SC945 2SC947 2SC948 2SC1815 2SC387A 2SC1959 2SC1626 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458 | |
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2SC3873
Abstract: b326s
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OCR Scan |
2SC3873 2SC3873 b326s | |
2SC3874Contextual Info: Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm φ 3.3±0.2 5.0±0.3 3.0 TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO |
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2SC3874 2SC3874 | |
2SC3871Contextual Info: Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage |
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2SC3871 2SC3871 | |
2SC3872Contextual Info: Power Transistors 2SC3872 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● ● High-speed switching High collector to base voltage VCBO Wide area of safe operation ASO Full-pack package which can be installed to the heat sink with |
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2SC3872 2SC3872 | |
2SC3870Contextual Info: Power Transistors 2SC3870 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage |
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2SC3870 2SC3870 | |
2SC3763
Abstract: 2SD1267A 2SC3536 RT1N140C 2SC3691 2SC3855 3845 3844 3841 3843
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OCR Scan |
2SC4085 2SC4415 2SC3356 2SC3513 2SC3087 2SC2335 2SC3870 2SC3090 2SC3536 2SC3872 2SC3763 2SD1267A 2SC3536 RT1N140C 2SC3691 2SC3855 3845 3844 3841 3843 | |
2SC3873Contextual Info: SavantIC Semiconductor Product Specification 2SC3873 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High VCBO ·High speed switching ·Good linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high speed switching applications |
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2SC3873 2SC3873 | |
2SC3874Contextual Info: Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V |
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2SC3874 2SC3874 | |
2SC3874
Abstract: 2SC387
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2SC3874 2SC3874 2SC387 | |
106m1
Abstract: 2SC3871 J300C
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OCR Scan |
2SC3871 106m1 2SC3871 J300C |