2SC3975 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 15.0±0.2 21.0±0.5 φ 3.2±0.1 VCE = 10 V, IC = 0.5 A, f = 1 MHz

PANASONIC J40

Abstract: TCS100 TC 30i 2SC3975
Contextual Info: Power Transistors 2SC3975 2SC3975 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features 6.9mm. I* *1 • H ig h s p e e d s w itc h in g • H ig h c o lle c to r - b a s e v o lta g e U n it ! mm

Contextual Info: Power T ransistors 2SC 3975 2SC3975 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it ! mm 5.2m ax. • Features o • High sp ee d sw itching 21.0 + 0.5 , (V cbo • Wide area of sa fety operation (ASO)

2SC3975

Contextual Info: Power Transistors 2SC3975 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 16.2±0.5 (3.5) Solder Dip • High-speed switching • High collector to base voltage VCBO

D4242

Abstract: 2SC3987 2SC4000 2SC4001 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A
Contextual Info: - 182 - m XËtë m 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A 2SC3979 2SC3979A 2SC3980 2SC3980A 2SC3981 2SC3981A 2SC3982 2SC3982A & tt KT KT KT KT KT KT KT KT KT KT KT KT KT KT « a mw Ta=25‘ C, *0][ÍTc=25eC V’ CBO V’ ceo IC(DC) Pc Pc* (V)

2SC3975

Contextual Info: Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: 2SC3975 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)800 I(C) Max. (A)10 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)800 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)6

200V 100MA NPN

Abstract: ic 3A hfe 500 2SC3975
Contextual Info: Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 • Features M Di ain sc te on na tin nc ue e/ d • High-speed switching • High collector-base voltage (Emitter open) VCBO

2SC2495

Abstract: 2SD889 2SC1565 2SC2915 nec 3114 2SD1010 2SC2762 2SC3283 2SC3356 3079
Contextual Info: - tt S £ T y p e No. € Manuf. 2SC 3079 □- - A 2SC 3080 ^ □- - A 2SC 3081 #" □- A 2SC 3082 □- - A = * SANYO £ 2SC3083 2SC 3085 h m 2SC4110 — 3 ^ ÎL _= H ß » H. i¥ 2SC 3092 = 2SC 3093 H 2SC 3094 2SC2612 2SC3365 2SC3975 2SC2658 » 2SC3089 2SC2659

2SC3975

Contextual Info: Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ● ● ● High-speed switching High collector to base voltage VCBO Wide area of safe operation ASO Satisfactory linearity of foward current transfer ratio hFE

2SC3975

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC3258

Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
Contextual Info: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SB600 NEC

Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
Contextual Info: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .

2SC3498

Abstract: 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295
Contextual Info: - tt Type No. E S Manuf. ft SANYO m Ä 3E TOSHIBA NEC B ±L HITACHI Ä ± ü FUJITSU T MATSUSHITA 2SC 3432 B m. 2SC4161 ZSU356Z • ’ SC2739 2SC 3433 a m 2SC4162 2SC3562 2SC3871 2 SC 3434 b m 2SC4423 2SC3306 2SC3210 2SC 3435 / B » 2SC4424 2SC3498 2SC 3436

2SC4751

Abstract: on 4772 2SC4767 2SC4667 2SC3892A 2SC4749 2SC3124 2SC4589 2sd1850 2SD2336
Contextual Info: 198 - £ S « Type No. Manuf. 2SC 4740 H m SANYO 3C 2Ë TOSHIBA NEC S ÍL HITACHI * ± a FUJITSU T MATSUSHITA Ÿà 2SC 4745 a B 4 4 4 4 2SC3894 2SD1432 2SD2372 2SC 4748 J B IL 2SC383G 2SC3889A 2SD2373 2SC 4747 > 0 4 2SC3897 2SC4560 2SC 4748 2SC3277 2SC3306

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC3824

Abstract: 2SC4359
Contextual Info: Transistors Selection Guide bv Applications and Functions • Switching Power Transistors Application Veso VcEO le (V ) (V ) (A ) 150/200/ 250 Switching sp eed switching 5 Packag e (N o.) tf le Ib (V) (A ) (mA) < 1.6 5 1(A) (/¿s) MT3 MT4 (D43) (D46) T0-220(a) TO-220F(a) TO-220E TO-220D

2SC5282

Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) A p p li­ cation VcBO VcEO (V) (V) lr (A) (V) lc (A) High­ speed switch­ ing P ack ag e (No.) VcE(sat) Ib (mA) l/JS) MT3 (D40) MT4 (D41) r 0 -220(a) T0220F(a) TO-220E TO-220D N Type

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sd2396

Abstract: 2SD2005 2SC4614 2SD1547 2SD1554 2SD2004 2SC4290A 2sc4814 2SC4040 2SD1650
Contextual Info: - ü £ T y p e No. / 2SD 2337 fö T te t te t te t s a 2SD 2338 □ — a t 2SD 2333 2SD 2334 ^ 2SD 2335 ^ 2SD 2336 / M anu f. « h m SANYO M TOSHIBA =£ « B HITACHI ÍI 2SD143Î 2SD23D0 2SD1878 2SD1545 2SD2311 2SD2252 2SD1547 2SC4744 2SD2251 2SD1547 2SC2882

2SC4420

Abstract: 2sc5158
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) Package (No.) VcE(sat) Appli­ cation H igh­ sp eed sw itch­ ing VcBO VceO lc (V) (V) (A) ti (V) lc !b (A) (mA) ißs) TO-220F(a) (D55) TO-220E (D59) 450

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030