2SD1624 Search Results

dg transistor smd

Abstract: 2SD1624 SMD MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR 2SD1624
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1624 Features Low collector-to-emitter saturation voltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage

2SD1624

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHIG APPLICATION „ DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. „ FEATURES * Adoption of FBET, MBIT processes

2SB124

Abstract: D1624 SB1124 2SB1124 2SD162H B112 B1124 marking b112
Contextual Info: Ordering num ber:E N 2019A 2SB1124/2SD1624 No.2019A PNP/NPN Epitaxial Planar Silicon Transistors SA\YO High-Current Switching Applications 1 Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features . Adoption of FBIT, MBIT processes.

Contextual Info: Transistors SMD Type Product specification 2SD1624 Features Low collector-to-emitter saturation voltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50

2SD1624

Abstract: u 5601 2SB1124
Contextual Info: Ordering num ber: EN 2019A 2SB1124/2SD1624 NO.2019A SA VYÖ PN P/N PN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features . Adoption of FBIT, MBIT processes.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION „ DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. „ FEATURES * Adoption of FBET, MBIT processes

2SD1624

Abstract: 2SD1624T 2SB1124T-TD-E EN2019B
Contextual Info: 2SB1124/2SD1624 Ordering number : EN2019B SANYO Semiconductors DATA SHEET 2SB1124/2SD1624 PNP/NPN Epitaxial Planar Silicon Transistors High Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment •

2SB1124

Contextual Info: Ordering number:2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions • Voltage regulators, relay drivers, lamp drivers, electrical equipment. unit:mm 2038 [2SB1124/2SD1624]

2SB1124

Abstract: 2SD1624 ITR08907 ITR08908
Contextual Info: Ordering number:ENN2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions • Voltage regulators, relay drivers, lamp drivers, electrical equipment. unit:mm 2038A [2SB1124/2SD1624]

2SD1651

Abstract: 2SD1624 2SD1629 2sd1652 2SD1621 2SD1622 2SD1623 2SD1625 2SD1626 2SD1627
Contextual Info: - 258 - « Ta=25'C.*EPÍáTc=25‘C M 2SD1621 2SD1622 2SD1623 2SD1624 2SD1625 2SD1626 2SD1627 2SD1628 2SD1629 2SD1630 2SD1631 2SD1632 2SD1633 2SD1634 ¿ÓU1DÍ0 2SD1637 2SD1638 2SD1640 2SD1641 2SD1643 2SD1643A 2SD1645 2SD1646 2SD1647 2SD1649 2SD1650 2SD1651

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION  DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.  FEATURES * Adoption of FBET, MBIT processes

transistor 1548

Abstract: 2F TRANSISTOR gummel TRANSISTOR 2f 2SD1624
Contextual Info: SPICE PARAMETER 2SD1624 LARGE-SIGNAL TRANSISTOR model : Gummel-Poon Parameter Value IS 505.2f 213.0 BF NF 998.4m VAF 75.00 IKF 15.48 ISE 271.9f NE 1.474 BR 80.00 NR 1.000 VAR 100.0 IKR 30.00m Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value

2SD1624

Abstract: transistor marking 2a transistor marking DG
Contextual Info: UTC 2SD1624 NPN EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT SWITCHIG APPLICATION DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. 1 FEATURES *Adoption of FBET, MBIT processes *Low collector-to-emitter saturation voltage

C1959

Abstract: nec 2405 NEC 2403 2sc4560 nec 2410 2SD2409 2sd2427 nec 2412 2SD1509 NEC 2415
Contextual Info: - sa s T y p e Ho. tt £ Manu f. = X SANYO S TOSHIBA n B NEC B ÍL HITACH I s ± a F U JIT S U fé T MATSUSHITA Z * M ITSUBISHI □ 267 — A ROHM 2SD 2403 B S 2SD1624 2SC4541 2SO 2404 fé T 2SD2426 2SD1509 2SD 2405 fé T 2SD2251 2SD1433 2SO 2406 ^ Si 2SD2202

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD1624 Features • • • • NPN Epitaxial Planar Silicon Transistors Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

2sd1878

Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
Contextual Info: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö

2SC4542

Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
Contextual Info: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313

Ta 7210 p

Abstract: S-8324H55MC-F7J-T2 S-8328H30MC-FYK-T2 S-8324 S-8324A25MA-EOF-T2 S-8324A27MC-EOH-T2 8328H50MC S-8328 S-8324C25MA-EQF-T2 S-8324A50MA-EPE-T2
Contextual Info: Rev. 7.2_10 超小型 PWM/PFM 制御 昇圧スイッチングレギュレータ S-8324/8328 シリーズ S-8324/8328 シリーズは基準電圧源, 発振回路, パワーMOS FET S-8324 シリーズ , 誤差増幅器等で構成された PWM/PFM 制御 CMOS

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SB1205

Abstract: 2SD1801
Contextual Info: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.

2sc4983

Contextual Info: SAHYO LOW-SATURATl ON VOLTAGE TR SERI ES Small-Signal Transistors.NO.l The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power ampl ifiers, electrical equipment.

transistor b985

Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
Contextual Info: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.