2SC399 Search Results

2SC3990

Contextual Info: Ordering n u m b e r:EN2234C No.2234C 2SC3990 NPN Triple Diffused Planar Silicon Transistor SA V V O i Switching Regulator Applications Features • High breakdown voltage, high reliability. •Fast switching speed. • Wide ASO. • Adoption of MBIT process.

BO160

Abstract: 2SC3993 transistor IC 12A 400v 80266
Contextual Info: Ordering num ber: E N 2236D _ 2SC3993 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed. • WideASO. • Adoption of MBIT process. Absolute Maximum Ratings at Ta = 25°C

2SC3996

Abstract: 25091
Contextual Info: Ordering number:EN2509C 2SC3996 N P N T riple Diffused P la n a r Silicon T ran sisto r U ltrahigh-D efinition Display H orizontal Deflection O utput Applications F eatu res •High speed tf= 100ns typ . • H igh reliability (Adoption of H V P process).

2SC3998

Abstract: 2sc3998 transistor transistor 2SC3998 IC 2732 pdf datasheet 2sC3998 horizontal output transistor PANASONIC 2SC3998 NPN Transistor 1500V 20a EN2732
Contextual Info: Ordering number:EN2732 NPN Triple Diffused Planar Silicon Transistor 2SC3998 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process).

2SC4290A

Abstract: 2SC4333 j 4310 nec 4312 2SC3586 2SC3153 2SC3997 4303A 2SC3536 2SC3535
Contextual Info: - m tt % Type No. 2SC 4290 y H £ 2SC 4291 X h n 2SC 4292 , = # 2SC 4293 > = & 2SC 4294 H # 2SC 4295 n —A 2SC 4296 « Manuf. ^ yy*ry = * SANYO 2SC3997 Jï TOSHIBA B R NEC B ÎL HITACHI * ± FU JIT S U a fó T MATSUSHITA 2SC4290A 2SD1730 2SD1731 2SC4291 2SM73D

2SC3992

Abstract: ITR06169 ITR06170 ITR06171 ITR06172
Contextual Info: Ordering number:ENN2235D NPN Triple Diffused Planar Silicon Transistor 2SC3992 800V/12A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

2sc3998 transistor

Abstract: 2SC3998 XB5-A IO102 2sC3998 horizontal output transistor IC 2732 S3 24A NPN Transistor 1500V 20a
Contextual Info: Ordering number: EN 2732 r No.2732 I 2SC3998 NPN Triple Diffused Planar Silicon Transistor Very High-Definition Color Display Horizontal Deflection Output Applications Features . High speed t^=100ns typ . High breakdown voltage ( V C b q = 1 5 0 0 V ) . High reliability (adoption of HVP process)

2SC3991

Abstract: ITR06157 ITR06158 ITR06159 ITR06160 ic26a
Contextual Info: Ordering number:ENN2836 NPN Triple Diffused Planar Silicon Transistor 2SC3991 500V/50A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf=0.1µs typ . · Wide ASO. · Adoption of MBIT process.

BC238BP

Abstract: BF494C BC238CP BSX77 2N295 BF194 2N2954 2SC398 bf494 motorola BF332
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N4435 2SC2776 2SC2778 2N3293 2N3294 2N2476 2SC398 2SC398 2SC398 2SC399 ~~g~~~ 15 20 25 30 35 40 2N2477 2N2847 2N2848 2N2958 2N3115 2N3982 2N3982 2N3982 2SC2295 2SC33 2SC204 BSX76 BSX77 2SC323

2SC3998

Abstract: transistor 2SC3998
Contextual Info: Ordering number:ENN2732 NPN Triple Diffused Planar Silicon Transistor 2SC3998 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process).

Contextual Info: Ordering number:ENN2508B NPN Triple Diffused Planar Silicon Transistor 2SC3995 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (adoption of HVP process).

2sc3997

Contextual Info: Ordering number:ENN2771 NPN Triple Diffused Planar Silicon Transistor 2SC3997 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process).

2SC3998

Abstract: NPN Transistor 1500V 20a
Contextual Info: 2SC3998 Ordering number : EN2732A SANYO Semiconductors DATA SHEET 2SC3998 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed tf=100ns typ . High breakdown voltage (VCBO=1500V).

Contextual Info: 2SC3994 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.1k I(C) Max. (A)25 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3990

Abstract: ITR06147 ITR06148 ITR06149 ITR06150 ER57
Contextual Info: Ordering number:ENN2234C NPN Triple Diffused Planar Silicon Transistor 2SC3990 500V/35A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

2SC3996

Abstract: ITR06208 ITR06209 ITR06210 ITR06211
Contextual Info: Ordering number:ENN2509C NPN Triple Diffused Planar Silicon Transistor 2SC3996 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (adoption of HVP process).

2SC3994

Abstract: ITR06191 ITR06192 ITR06189 ITR06190
Contextual Info: Ordering number:ENN2828 NPN Triple Diffused Planar Silicon Transistor 2SC3994 800V/25A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf=0.1µs typ . · Wide ASO. · Adoption of MBIT process.

2SC3991

Abstract: ITR06157 ITR06158 ITR06159 ITR06160 ic24a
Contextual Info: Ordering number:ENN2836 NPN Triple Diffused Planar Silicon Transistor 2SC3991 500V/50A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf=0.1 s typ . · Wide ASO. · Adoption of MBIT process.

2SC3994

Abstract: ITR06189 ITR06190 ITR06191 ITR06192
Contextual Info: Ordering number:ENN2828 NPN Triple Diffused Planar Silicon Transistor 2SC3994 800V/25A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf=0.1 s typ . · Wide ASO. · Adoption of MBIT process.

2SC3990

Contextual Info: Ordering number:EN2234C NPN Triple Diffused Planar Silicon Transistor 2SC3990 500V/35A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

2SC3993

Contextual Info: Ordering number:EN2236D NPN Triple Diffused Planar Silicon Transistor 2SC3993 800V/16A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

Contextual Info: 2SC3991M Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)800 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3997 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.5k I(C) Max. (A)20 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3992 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.1k I(C) Max. (A)12 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)