2SC33 Search Results

2sc3310

Contextual Info: 2SC3310 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm SW ITCH IN G REGULATOR A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. HIGH SPEED D C-DC CONVERTER APPLICATIONS. • • Excellent Switching Times : tr =1.0//s (Max.), tf=1.0/us (Max.) at Iç = 4A

2SC3307

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3307 INDUSTRIAL APPLICATIONS HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm SWITCHING REGULATOR APPLICATIONS. 20.5MAX. HIGH SPEED DC-DC CONVERTER APPLICATIONS. y 03.Z±aZ , ~ FEATURES: . Excellent Switching Times

2SC3322

Contextual Info: Inchange Semiconductor Product Specification 2SC3322 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・High voltage ・High speed APPLICATIONS ・High power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

npn ic 400ma

Abstract: 2SC3325
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3325 Unit in mm A U DIO FREQUENCY LOW POWER A MPLIFIER APPLICATIONS. + Q5 2.5 —U 3 DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. FEATURES: . Excellent hpE Linearity : h p g 2 = 2 5 ( M i n .) at . High Voltage

SC3383

Abstract: 1943a 2SC3383 2SA1392
Contextual Info: Ordering number: EN 1 9 4 3 A i i SAXYO I 2SA1392/2SC3383 N0.1943A PNP/ NPN Epitaxial Planar Silicon Transistors AF Amp Applications Features . Adoption of FBET process . AF amp : 2SA1392 Absolute M a x i m a Ratings at Ta=25°C Collector to Base Voltage

M338

Abstract: J300j nj037 2SA1338 2SC3392 marking al WA1 marking M338 NPN
Contextual Info: Ordering num ber:EN 1 4 2 1 A 2SA1338/2SC3392 No.1421A SANYO PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications I Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fT

2SC3352

Abstract: 2SC335
Contextual Info: Inchange Semiconductor Product Specification 2SC3352 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High voltage ・High speed switching APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector

2sc336

Abstract: 2SC3365
Contextual Info: Inchange Semiconductor Product Specification 2SC3365 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed APPLICATIONS ・For high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

NPN VCEO 800V

Abstract: NPN 800V 2SC3307 tr10s
Contextual Info: Inchange Semiconductor Product Specification 2SC3307 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・Excellent switching times : tr=1.0 s Max . ,tf=1.0μs(Max .)(IC=5A) ・High collector breakdown voltage : VCEO=800V APPLICATIONS ・High speed,high voltage switching applications

2SC3353A

Abstract: 25C33 hig voltage high speed NPN transistors 2SC3353
Contextual Info: Power Transistors ^32052 0 0 1 b4 2 4 . 2SC3353, 2SC3353A 335 2S C 3353, 2S C 3353A Silicon NPN Triple-Diffused Junction M esa Type P ackage Dim ensions High B reakdown Voltage, High Sp eed Switching • F eatures • • • • Unit I mm 4.4 max. . High speed switching

2SC3324

Abstract: 2SA1312
Contextual Info: 2SC3324 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3324 ○ 低周波増幅用 ○ 低周波低雑音用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です。 • 電流増幅率が高い。 : hFE = 200~700

2SC3325

Abstract: 2SA1313
Contextual Info: 2SC3325 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3325 ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 • 単位: mm 直流電流増幅率の電流依存性が優れています。 : hFE (2) = 25 (最小) (VCE = 6 V, IC = 400 mA)

2SC3326

Contextual Info: 2SC3326 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3326 ○ ミューティング用 ○ スイッチング用 単位: mm • エミッタ･ベース間電圧が大きい。 : VEBO = 25 V (最大) • Reverse hFE が大きい。

u560100

Abstract: 2SA1318 2sc3331 transistor 2SC3331 2sa131
Contextual Info: Ordering number: EN 16 00A 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors A F Am p Applications M, ,ár%& Use . Capable of being used in the low frequenoy to high frequency range. Features ♦ Large current oapaeity and wide ASO. : 2SA1318

2SC3322

Contextual Info: SavantIC Semiconductor Product Specification 2SC3322 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·High voltage ·High speed APPLICATIONS ·High power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC3300

Contextual Info: SavantIC Semiconductor Product Specification 2SC3300 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Low saturation voltage ·Wide area of safe operation APPLICATIONS ·Power and general purpose application PINNING PIN DESCRIPTION 1 Base

2SC3383

Abstract: 2SA1392 ITR03393 ITR03394 ITR03395
Contextual Info: Ordering number:ENN1943B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions • Adoption of FBET process. · AF amp. unit:mm 2003B [2SA1392/2SC3383] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1

2SC3312

Abstract: 2SA1310 IC1006
Contextual Info: Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SC3336

Abstract: DSA003644
Contextual Info: 2SC3336 Silicon NPN Triple Diffused ADE-208-891 Z 1st. Edition Sep. 2000 Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

2SA1328

Abstract: 2SC3345
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1328 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -6A ·High Switching Speed ·Complement to Type 2SC3345 APPLICATIONS ·Designed for high current switching applications.

Contextual Info: TO SHIBA TOSHIBA TRANSISTOR 2SC3381 SILICON NPN EPITAXIAL TYPE MONOLITHIC DUAL TYPE 2SC3381 Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS RECOM M ENDED FOR CASCODE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AM PLIFIERS 9-5 ±0.3

Contextual Info: T O SH IB A 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 1çC 337Q Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS 5.1 M AX. • Very Low Noise in the Region of Low Signal Source Impedance

Contextual Info: TOSHIBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 Unit in mm OR MUTING AND SWITCHING APPLICATIONS • • • • High Emitter-Base Voltage : V e b q = 25V Min. High Reverse hpE : hp^ = 150(Typ.) (V q e = —2V, I q = —4mA) Low On Resistance : R q n = 1H (Typ.) (Iß = 5mA)

Contextual Info: 2SC3336 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline 1. B a s e 2. C o lle c to r F la n g e 3. E m itte r 2SC3336 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage