2SC4519 Search Results

Contextual Info: Ordering number : EN 3138 SA%YD 2SC4519 No.3138 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatu res . Adoption of FBET process • Low collector-to-emitter saturation voltage • Fast switching speed . Small-sized package unit

Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 ^ 7 0 7 ^ 0007107 T -3 2SC4519 1 5 - I S . # 2018A N P N Epitaxial P la n a r S ilic o n T ran sis to r High-Speed Switching Applications 3133 Features . Adoption of FBET process • Low collector-to-emitter saturation voltage

smd transistor marking TT

Abstract: MARKING SMD NPN TRANSISTOR BR 2SC4519
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4519 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low collector-to-emitter saturation voltage. 1 0.55 Adoption of FBET process. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

2SC4519

Contextual Info: 2SC4519 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 70.00f NF 1 IKF 900.0m NE 2 NR 1 700.0m IKR NC 2 IRB 400.0u RE 175.0m XTB 2 XTI 3 VJE 680.0m TF 300p VTF 5 PTF VJC 550.0m XCJC 1 FC 50p AF 1 Temp = Date : Unit A A A A Ohm

2SC4519

Abstract: ITR07150 ITR07151 ITR07152 marking TT
Contextual Info: Ordering number:ENN3138 NPN Epitaxial Planar Silicon Transistors 2SC4519 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · Low collector-to-emitter saturation voltage. · High-speed switching. · Small-sized package.

Contextual Info: 2SC4519-5 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition)45

2SC4519

Contextual Info: Ordering number:EN3138 NPN Epitaxial Planar Silicon Transistors 2SC4519 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package.

20IB2

Abstract: ITR07151 ITR07152 ITR07153 ITR07154 ITR07155 2SC4519 ITR07150 IC 3160
Contextual Info: 注文コード No. N 3 1 3 8 2SC4519 No. N 3 1 3 8 30100 開発ニューズ No. ※ 3160 とさしかえてください。 2SC4519 特長 NPN エピタキシァルプレーナ形シリコントランジスタ 高速度スイッチング用 ・FBET プロセス採用。

Contextual Info: 2SC4519 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition)45

kw2j

Abstract: MARKING 2J0 2sc2960 a-y
Contextual Info: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller

Contextual Info: O rdering n u m b er:E N 47 7 8 F P 206 No.4778 PN P/N PN E p itax ial P la n a r Silicon T ran sisto rs S A W O Push-Pull Circuit Applications F e a tu r e s •Com posite type w ith a P N P tra n sisto r and an N PN tra n sisto r in one package, facilitatin g high-density

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SA1047

Contextual Info: SA%VO CP Chip Pack Transistors We have a full lineup of Chip Pack (package: CP) transistors that are very small-sized, can be applied to various uses, and excel in reliability, quality stability. They are the same except collector dissipation (PC max), as those placed in the

2SC4515

Abstract: 2SC4536 2SC4561 2SC4550 c455 2SC4516 2SC4519 2SC4520 2SC4521 2SC4523
Contextual Info: - 206 - m X Ë f à <Ta=25,C 1*EPÍ¿Tc=25'C 2SC4515 föT HF LN A n VcBO Vc e o IcCDO Pc Pc* V) (V) (A) (W) (W) 15 10 0.05 "(max) (/¿A) 0.2 VcB (V) 1 10 % (min) ft 4# (max) iê (Ta=25<C ) (max) (V) ic/ÏE (A) Vc e (V) [*EP(atypffi] 50 300 8 0.01 (max) (V)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC3953-SPICE

Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f

2097a

Abstract: 2SA1728 2SC4519 FP206 marking 206
Contextual Info: Ordering number:EN4778 FP206 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP206 is composed of 2 chips, one being

2097a

Contextual Info: Ordering number:EN 4778 _FP206 No.4778 i PN P/N PN E pitaxial P lan ar Silicon Transistors Push-Pull Circuit Applications F e a tu r e s • Composite type w ith a PN P tra n sisto r and an NPN tra n sisto r in one package, facilitating high-density

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

Contextual Info: SA\YO CP Chip Pack Transistors We have a full lineup of Chip Pack (package: CP) transistors that are very small-sized, can be applied to various uses, and excel in reliability, quality stability. They are the same except collector dissipation (PC max), as those placed in the

2SC4519

Abstract: 200YA
Contextual Info: Ordering num ber:E N 3138 2 S C4 5 19 No.3138 NPN Epitaxial P lanar Silicon Transistor SANYO i High-Speed Switching Applications F e a tu re s . Adoption of FBET process •Low collector-to-emitter saturation voltage • Fast switching speed . Small-sized package

2SA1392

Abstract: 2SA1450 2SA1683 2SB631 2SB632 2SB632K 2SC3383 2SC3708 2SC4414 2SD600
Contextual Info: General-application Transistors Absolut« maximum ratings Type No. Package typ Applications VCBO 00 Veto Electrical characteristics Ta = 25 t ICBOmax @VCB te PC (V) VEDO 00 (A) (W ) leso max (? ) UA) tra ve t 1C hFE® VCE- 1C VCB CO hFE VCE 00 VCE (V)

2SC5188

Abstract: 2SA1935 2sc5187 2sa193 2SA1936 2SC4453 2SA1607 2SA1728 2SA1764 2SC4168
Contextual Info: SAf/YO H IG H - S P E E D S W IT C H IN G A P P L IC A T IO N S {Saal! Signal Transistors SANYO:SMCF F e a t u r e s Case Outlines unit:mm) SANYO: MCP * H i g h switching speed * H i g h breakdown voltage 1 ♦ Low collector saturation voltage ♦ Very small-sized package permitting a set to be made smaller -

vr 320l

Abstract: 2SA1763 2SB815 2SC4453 MARKING FY 2SA1745 2SA1753 2SA1838 2SA1839 2SA1881
Contextual Info: CP Chip Pack Transistors We have a full lineup of Chip Pack (package: CP) transistors that are very small-sized, can be applied to various uses, and excel in reliability, quality stability. They are the same except collector dissipation (PC max), as those placed in the