TRL20 Search Results

Contextual Info: TRL201~TRL207 一般整流二極管 General Rectifier Diodes •特徵 IF（AV） ● VRRM ● 高可靠性 ● ■外形尺寸和印記 Features 單位 Unit：mm 2.0A 50V~1000V High reliability 負極標誌 Cathode Mark 型號 Type ■用途 Applications

Contextual Info: TRL2005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200ã V(BR)CBO (V)200 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

kw2j

Abstract: MARKING 2J0 2sc2960 a-y
Contextual Info: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller

Contextual Info: Thick Film Chip Resistors Low Resistance for 2010 TA-I No TRL-200S005C page 1/9 1. Scope : This specification applies for the RL20(2010) of thick film chip resistors made by TA-I. Conductor : 2. Construction: (Lead-free or with lead ) Over Coat Sn Plating

TRS-4405S

Abstract: MD14 TRS-3605S TRS-4015S TRS-4805S TRS-5205S TRS-5405S IMD14 480 to-5
Contextual Info: 386972a GENERAL DIODE CDRP_ 07C 00252 D T-33-o GENERAL DIODE CORP ~ 0? D E | 3 f i b T ? S D 0 D Q 0 E S a 4 | SILICON NPN-Power Transistors TYPE NO. MAX. THERMAL RES. Junction to C u e * * re/ *) TRS-3M5S 17.5 MAX. ABSOLUTE MAX. RATINGS £ 2 5 ' C.

2SC118

Abstract: MD14 package ST7200 81T2 A249 A298 MT1070 2SC100 2n6135 usaf522es067m
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

MD14

Abstract: TRM6014 TRM6505 TRL2005 TRM5014S TRM5504 TRM6504 TRM7014 TRM8014 TRW201
Contextual Info: 3869720 GENERAL DIODE CORP '_ 07C 0 0 2 5 3_ D GENERAL DIODE CORP 07 DE |3ÛL.ci720 0000E53 b SILICON N P N -P o w e r Transistors TYPE NO. MAX. THERMAL RES. Junction lo Case 9,« MAX. COLL. DISS. in Fiee All 0 2 5 'C Pe ABSOLUTE MAX. RATINGS $ 2 5 'C.

2SC114

Abstract: 2SA647 2SC114 transistor usaf516es047m TRM7015 2N2180 MD14 package 81T2 A249 A298
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

MD14

Abstract: usaf521es071m MD14 package 81T2 A249 A298 MT1070 usaf520es070 usaf521es071
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t - 40°c k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

TIP310

Abstract: B0939 B0941 D510 B0581
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 2N6417 2SC3567L 2S036 2SC3567K BUW64B BUW64B BUW64B B02410 2Nl648 BOT290F 40912 2N6263 2N2984 BOT31DF TIP310 2N1650 B0941 B0941 50 tsU~41 ~emel~D PhilipsElec AmperexElec See Index Fujitsu Ltd

20R0

Abstract: R5 Series T85 0R25 RESISTOR K045 MRVL 90 MRVL ICR0805 R020 R0603 R0805
Contextual Info: S u r fo c e M o u n t C o m p o n e n l s stRttsRtf. IYPE WCR 'o \6'" \O t@j POWTR WATTS (MM) RTS.RANGT IOI.tRAN(T DlMtNSr0l{ + (0HMS) L H W w(R0402 0.063 4Ri-2M2 w(R0603 0.0625 w(R0805 d f.JtAx v0r.T5 I(R (ppm/'() AMBIINT rtMP"( NOITS purpose Generol lhirkfilmrhips.

NKT 275 transistor

Abstract: 2N6135 MD14 package
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

TRM401

Abstract: BC140C ST6512 181T2 mt102 MD14 7G13 ST7200 81T2 A298
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SC5188

Abstract: 2SA1935 2sc5187 2sa193 2SA1936 2SC4453 2SA1607 2SA1728 2SA1764 2SC4168
Contextual Info: SAf/YO H IG H - S P E E D S W IT C H IN G A P P L IC A T IO N S {Saal! Signal Transistors SANYO:SMCF F e a t u r e s Case Outlines unit:mm) SANYO: MCP * H i g h switching speed * H i g h breakdown voltage 1 ♦ Low collector saturation voltage ♦ Very small-sized package permitting a set to be made smaller -

1401-1407

Abstract: 2N1424 GT123 TIP04 2N5577 2N5579 MD38 2sc179 data
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t - 40°c k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT