2SC495 Search Results

IC nec 555

Abstract: ic 7490 marking 691 ic 7490 data sheet nec 7604 4440 audio amplifier Datasheet of 7490 IC ic 7490 description 2SC4955 2SC4955-T1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2.8±0.2 +0.1 0.4 –0.05

IC nec 555

Abstract: nec b 536 transistor transistor marking T83 ghz
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2 . 8 ± 0.2

NEC D 553 C

Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.

ma 8920

Abstract: ZO 607 transistor ic 7490 data sheet 2SC4956 2SC4956-T1 2SC4956-T2 51160
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0.20 pF TYP.

2SC495

Abstract: 2SC496 toshiba l40 2SA496 2SC495-2SC496 2SA505 AC46C 2sc4952 2sa49 2SC496 Y
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- ~5b D~”§ SOTTESO □□07MD7 7 .J '2SC495' 2SC496, 9097250 TOSHIBA SILICON NPN EPITAXIAL TYPE PCT PROCESS (DI S CRE TE / O P T O ) 5òC 07 407 Ö 7"- 3 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 0 3 . 1 ± O .1 5 FEATURES :

NEC 2581

Abstract: nec 2405 2405 nec 09640
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance PACKAGE DIMENSIONS in millimeters 2 . 8 ± 0.2 Cre = 0 .3 p F T Y P .

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating

LA 5530

Abstract: c 4977 transistor em 223 IC AT 6884 TRANSISTOR NPN 16085
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4959 THIN -TYPE SMALL MINI MOLD P A C K A G E D R A W IN G S (Unit: m m ) FEA TU R E S • Low noise and high gain

nec 2410

Abstract: transistor NEC D 587 2410 nec
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIM ENSIONS in m illim eters 2.1

transistor NEC D 986

Abstract: transistor NEC D 587 NEC D 986 150GHz
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0.20 pF TYP.

2SC4953

Contextual Info: Power Transistors 2SC4953 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 3.0±0.5 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip • High-speed switching • High collector to base voltage VCBO • Wide area of safe operation ASO

2SC2320

Abstract: 2SC2719 2SC984A 2SC1010 2sc372 2SD300 2SC1000 2sd1111 Toshiba 2SC995 2SC4641
Contextual Info: - s « tt T y p e No. 2SC 978 h m 2 S C 979 M M S 2 S C 9 8 0 G M M 2SC 9 8 0 A 2 S C 982 2SC 983 € Manuf. TOSHIBA s m NEC $L 2SC1280 2SC4218 2SC2229 2SC2274 2SC495 2SC 991»'' M zÊ. 2SC998 2SC2329 2 S C 9 92 M S 2SC998 2SC2329 2SC 996 2SC372(G) & 2SC3620

nec b 536 transistor

Abstract: NEC B 536
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in m illim e te rs 2.1

transistor NEC D 587

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.20 pF TYP.

IC nec 555

Abstract: 4440 audio amplifier 7120 ic 7490 data sheet 2SC4955 2SC4955-T1 2SC4955-T2 07630
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2.8±0.2 +0.1 0.4 –0.05

2SC4953

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2

2SC4953

Contextual Info: Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 500 V Collector-emitter voltage (E-B short)

nec 2571

Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .

pulse 01940

Abstract: NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low V oltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in millimeters 2 .8 ± 0.2

IC 811 0400 01

Abstract: TRANSISTOR 2SC 950
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIM ENSIONS in m illim eters , 1.25 ±0.1

NEC IC D 553 C

Abstract: CB 548 transistor NEC D 553 C
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2 .8 ± 0.2 Cre = 0.4 pF TYP.

NEC 2581

Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05

nec 2410

Abstract: transistor marking T83 ghz 2SC4959 63950 2SC4959-T1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 ± 0.1 Low Feedback Capacitance 1.25 ± 0.1

nec 2410

Abstract: pulse 01940
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in m illim eters •