2SC496 Search Results

2sc4963

Abstract: Horizontal Deflection Switching Transistors
Contextual Info: Inchange Semiconductor Product Specification 2SC4963 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High breakdown voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・Color TV horizontal deflection output ・Color display horizontal deflection output

Contextual Info: 2SC4963 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • Built-in damper diode type • Isolated package TO-3PFM Outline 2SC4963 Absolute Maximum Ratings Ta = 25 °C

2SC495

Abstract: 2SC496 toshiba l40 2SA496 2SC495-2SC496 2SA505 AC46C 2sc4952 2sa49 2SC496 Y
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- ~5b D~”§ SOTTESO □□07MD7 7 .J '2SC495' 2SC496, 9097250 TOSHIBA SILICON NPN EPITAXIAL TYPE PCT PROCESS (DI S CRE TE / O P T O ) 5òC 07 407 Ö 7"- 3 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 0 3 . 1 ± O .1 5 FEATURES :

2SC4960

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4960 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)

2SC4960

Contextual Info: Power Transistors 2SC4960 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0±0.2 0.7 15.0±0.3 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 900 V Collector-emitter voltage (E-B short)

2SC496-0

Abstract: 2SC4960 2SC4960A
Contextual Info: Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm • Features ● ● ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SC4960 base voltage 2SC4960A Collector to emitter voltage Collector to

2SK2752

Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
Contextual Info: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867

Contextual Info: 2SC4964 Silicon NPN Epitaxial REJ03G0736-0300 Previous ADE-208-005A Rev.3.00 Aug.10.2005 Application VHF / UHF RF switch Features • Low Ron and high performance for RF switch. • Capable of high density mounting. Outline RENESAS Package code: PLSP0003ZB-A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4960 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: 2SC4962 Silicon NPN Triple Diffused HITACHI A pplication TV /character display horizontal deflection output Features • High breakdown voltage V CES = 1500 V • Built-in dam per diode type • Isolated package TO-3PFM O utline 2SC4962 A bsolute M axim um R atings Ta = 25°C

if amplifire

Abstract: 2SC4964 transistor application Amplifire
Contextual Info: 2SC4964 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features 3 • Low Ron and high performance for RF switch. • Capable of high density mounting. 1 2 1. Emitter 2. Base 3. Collector Table 1 Absolute Maximum Ratings Ta = 25°C

Contextual Info: HITACHI 2SC4965 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CM PAK Features t • Low Ron and high performance for RF switch. • Capable of high density mounting. ^ . 2 Table 1 A bsolu te M a x im u m R atings Ta = 25°C

2SC4968

Contextual Info: Transistor 2SC4968 Silicon NPN epitaxial planer type For UHF band low-noise amplification M Di ain sc te on na tin nc ue e/ d Unit: mm • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit 15 V 10 V Collector to base voltage VCBO Collector to emitter voltage

2SC4966

Abstract: power amplifire Amplifire
Contextual Info: 2SC4966 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features 3 • Low Ron and high performance for RF switch. • Capable of high density mounting. 1 2 1. Emitter 2. Base 3. Collector Table 1 Absolute Maximum Ratings Ta = 25°C

2SC4963

Contextual Info: 2SC4963 Silicon NPN Triple Diffused Application TO–3PFM TV / character display holizontal diflection output Features • High breakdown voltage VCES = 1700 V • Built–in damper diode type • Isolated package TO–3PFM 1. Base 2. Collector 3. Emitter

Contextual Info: 2SC4963 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • Built-in damper diode type • Isolated package TO-3PFM Outline 2SC4963 Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SC4963 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • Built-in damper diode type • Isolated package TO-3PFM Outline 2SC4963 Absolute Maximum Ratings Ta = 25 °C

Contextual Info: 2SC4965 Silicon NPN Epitaxial REJ03G0737-0300 Previous ADE-208-006A Rev.3.00 Aug.10.2005 Application VHF / UHF RF switch Features • Low Ron and high performance for RF switch. • Capable of high density mounting. Outline RENESAS Package code: PTSP0003ZA-A

2SC4963

Contextual Info: JMnic Product Specification 2SC4963 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFM package ・High breakdown voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・Color TV horizontal deflection output ・Color display horizontal deflection output

Contextual Info: Transistor 2SC4968 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features ● Low noise figure NF. High gain. High transition frequency fT. Ta=25˚C ea s

Contextual Info: Power Transistors 2SC4961 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features ● ■ Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage

2SC496-0

Abstract: 2SC4960 2SC4960A
Contextual Info: Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm • Features ● ● ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SC4960 base voltage 2SC4960A Collector to emitter voltage Collector to

Contextual Info: HITACHI 2SC4963-Silicon NPN Tripie Diffuseci Application T O -3 P F M TV / character display holizontal diflection output Features • High breakdown voltage VC E S = 1700 V • Built-in damper diode type • Isolated package TO-3PFM 1. Base 2. Collector

Contextual Info: 2SC4965 Silicon N PN Epitaxial HITACHI ADE-208-006 1st. Edition Application VHF / UHF RF switch Features • Low Ron and high performance for RF switch. • Capable o f high density mounting. Outline C M PA K ^ ^2 ^ 1 • Emitter 2. Base 3. Collector 745 2SC4965