2SC520 Search Results

2sa1943 toshiba transistor

Contextual Info: 2SA1943 T O S H IB A 2 S A 1 943 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. • • ^3.3 ±0.2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

tr 2sc5200

Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943
Contextual Info: T O SH IB A 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 20.5MAX. • • Unit in mm ^3.3 ±0.2 Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C

SMD TRANSISTOR MARKING BR

Abstract: 2SC5209 marking RH
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage VEBO

Contextual Info: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sC5200, 2SA1943

Abstract: 2sa1943 amplifier 2SC5200 2sc5200 amplifier circuit
Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SA1943 Features • • • PNP Silicon Power Transistors Silicon PNP triple diffused type Complementary to 2SC5200 Recommended for 100W high fidelity audio frequency amplifier

Hitachi DSA00164

Contextual Info: 2SC5207A Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features • High speed switching tf = 0.2 µsec typ • Wide drive current capability Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5207A

C5208

Abstract: 2SC5208
Contextual Info: 2SC5208 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5208 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications DC-AC Inverter Applications • High-speed switching: tr = 1.0 µs max ,tf = 1.5 µs (max)

C5201 transistor

Abstract: C5201 2SC5201
Contextual Info: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)

power amplifier 2sc5200 2sa1943 TRANSISTOR

Abstract: TOSHIBA 2SA1943 transistor 2sc5200 y 2sa1943 Scans-005879 2sa1943 amplifier 2SA1943 toshiba 2sc5200 toshiba 2SC5200 2sC5200, 2SA1943 2-21F1A
Contextual Info: 2SA1943 TO SH IBA 2 S A 1 943 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5 M AX. • • ¿ 3.3 ± 0.2 Complementary to 2SC5200 Recommended for 100 W High Fidelity Audio Frequency A rrm lifip r O n f n n f Sfacrp

2SC5201

Contextual Info: 2SC5201 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5201 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 MAX. • • High Voltage : V c e O - 600 V Low Saturation Voltage •• V/~ITI ' v ^ .c j iA = 1 nV ÍM a y ì Tri = 9.0 m A

toshiba 2SC5200

Abstract: 2sc5200
Contextual Info: 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V min • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage

2sc5200 toshiba

Abstract: toshiba 2SC5200 toshiba 2sc5200 audio power amplifier 2SC5200
Contextual Info: 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V min • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage

C5201 transistor

Contextual Info: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)

2SC5206

Contextual Info: 2SC5206 Silicon NPN Triple Diffused Application TO–220FM High power switching Features • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit

power transistor audio amplifier 100w

Abstract: 2sC5200, 2SA1943 2SA1943L 2sc5200 transistor 2SA1943 2SC5200 2SA194
Contextual Info: UTC 2SA1943 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. TO-3PL 1:BASE 2:COLLECTOR 3:EMITTER *Pb-free plating product number:2SA1943L

2sc5200

Abstract: 2sc5200 amplifier circuit 2sc5200 amplifier circuit diagram 2sc5200 power amplifiers diagram 2sc5200 amplifiers circuit diagram TRANSISTOR 2SC5200 2sc5200 transistor use audio amplifiers amplifier 2sc5200 amplifiers circuits diagram 2Sc5200 TRANSISTOR schematic diagram power amplifier 2sc5200 transistor
Contextual Info: 2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz Application ■ Audio power amplifier Description 1 2 3 TO-264 This device is a NPN transistor manufactured

120w audio power amplifier

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 POWER AMPLIFIER APPLICATIONS. U n it in mm ¿3.3 +0.2 20.5MAX • • O > UNIT V V V A A W °c °c ELECTRICAL CHARACTERISTICS Ta = 25°C 1 J. u + 2.5 1 .0 -0 25 5.45 ±0.15 <C° +i Ö dd <£> o o fJl dto o 3- 1? 5.45 + 0.15

power amplifier 2sc5200 2sa1943 TRANSISTOR

Abstract: 2sC5200, 2SA1943 2sa1943 amplifier 2SC5200 2sc5200 transistor 2-21F1A 2SA1943 2sc5200 toshiba 2SA1943 toshiba
Contextual Info: TO SHIBA 2SC5200 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 Unit in mm PO W ER AM PLIFIER APPLICATIONS , 20.5MAX. t • • ^3.3 ±0.2 ^ - Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

2sC5200, 2SA1943

Abstract: 2sa1943 amplifier 2SA1943 2SC5200 2SA1943 datasheet 2SA1943 2SC5200
Contextual Info: SavantIC Semiconductor Product Specification 2SA1943 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SC5200 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage

2SC5200

Abstract: 2sc5200 amplifier 2sc5200 amplifier circuit 2sC5200, 2SA1943 audio amplifier 2SC5200 100w audio amplifier 2sc5200 2SC5200 DATASHEET DATASHEET 2SC5200 2SA1943 2SA1943 2SC5200
Contextual Info: SavantIC Semiconductor Product Specification 2SC5200 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for 100W high fidelity audio frequency amplifier output stage

2SC5200L

Abstract: 2sc5200 transistor use audio amplifiers amplifier 2sc5200 amplifier circuit 2SC5200 2sc5200 amplifiers 2sc5200 amplifier 2sC5200, 2SA1943 TRANSISTOR 2SC5200 power amplifier 2sc5200 2sa1943 TRANSISTOR transistor npn 100w amplifier
Contextual Info: UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 TO-3PL *Pb-free plating product number: 2SC5200L ABSOLUTE MAXIMUM RATINGS TC = 25℃

Contextual Info: 2SC5207A Silicon NPN Triple Diffused Planar HITACHI Application Character display horizontal deflection output Features • High speed switching tf = 0.2 psec typ • Wide drive current capability Outline TO -3PFM (N) 1. Base 2. Collector 3. Emitter 2SC5207A

Contextual Info: 2SC5206 Silicon NPN Triple Diffused HITACHI Application High power switching Features • High breakdown voltage VCB0 = 500 V • Isolated package TO-22QFM Outline TO -220FM A 1 2 1. Base 2. Collector 3. Emitter 2SC5206 Absolute Maximum Ratings Ta = 25 °C