2SC5295 Search Results

2SC5295J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For 2 GHz band low-noise amplification 0.12+0.03

equivalent 2sc5295

Abstract: 2SC5295 SC-75
Contextual Info: Transistor 2SC5295 Silicon NPN epitaxial planar type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 3 0.3 Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

SS TRANSISTOR

Abstract: ic shelf life Frequency Control Products transistor 2SC5295 SC-75
Contextual Info: Transistor 2SC5295 Silicon NPN epitaxial planar type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 3 Collector current Collector power dissipation Junction temperature Storage temperature Unit 15 V VCEO 10 V VEBO 2 V 0.75±0.15

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Features ■ Package • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For 2 GHz band low-noise amplification • Package • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Package • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob

2SC5295J

Abstract: SC-89 2SC529
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For 2 GHz band low-noise amplification 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)

equivalent 2sc5295

Abstract: 2SC5295 SC-75
Contextual Info: Transistors 2SC5295 Silicon NPN epitaxial planer type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 1° 3 5° Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For 2 GHz band low-noise amplification 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For 2 GHz band low-noise amplification • Package • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob

2SC5295J

Abstract: SC-89
Contextual Info: Transistors 2SC5295J Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification 1.00±0.05 • Features 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage

2SC5295J

Abstract: SC-89
Contextual Info: Transistors 2SC5295J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For 2 GHz band low-noise amplification 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5˚ Symbol Rating Unit Collector-base voltage (Emitter open)

2SC5295

Abstract: SC-75
Contextual Info: Transistor 2SC5295 Silicon NPN epitaxial planar type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 0.8±0.1 1.6±0.15 0.4 Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2SA1323

Abstract: 2SC4716 2SA838 2SC5020 2sc2851
Contextual Info: Transistors Selection Guide by Applications and Functions # High Speed Switch, V C O and High Frequency Equipment Package (No.) Application Functions VcEO lc (mA) V C ES SS-Mini Type (D1) High speed switch VCO and high freq. equipment S-Mini Type(D5) Mini Type (D12)

2sc4973

Abstract: 2SC5020 2SC2671
Contextual Info: Transistors Selection Guide by Applications and Functions # High Speed Switch • V C O and High Frequency Type Application Functions High speed switch Package (No.) SS Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938 2SC3757 2SC4755