2SC529 Search Results

2SC5297

Contextual Info: Product Specification www.jmnic.com 2SC5297 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High breakdown voltage, high reliability. ・High speed APPLICATIONS ・Ultrahigh-definition CRT display ・Horizontal deflection output applications

2sc5299

Abstract: 2SC5299 equivalent DSA00230106 Ultrahigh-Definition CRT Display Horizontal Deflection
Contextual Info: Inchange Semiconductor Product Specification 2SC5299 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High breakdown voltage, high reliability. ・High speed APPLICATIONS ・Ultrahigh-definition CRT display ・Horizontal deflection output applications

Contextual Info: Ordering number : EN5290 2SC5296 No.5290 NPN Triple Diffused Planar Silicon Transistor SAXYO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F e a tu re s • High Speed: tr = 100ns typ. •High breakdown voltage : VcBo = 1500V.

transistor 2sc5299

Abstract: TA-0588 2039C-TO3PML 2SC5299 equivalent 2SC5299 TRANSISTOR NPN 8A 800V EN5293
Contextual Info: Ordering number : EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High Speed : tf=100ns typ. • High Breakdown voltage : VCBO=1500V. • High reliability Adoption of HVP process .

2SC5295J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For 2 GHz band low-noise amplification 0.12+0.03

equivalent 2sc5295

Abstract: 2SC5295 SC-75
Contextual Info: Transistor 2SC5295 Silicon NPN epitaxial planar type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 3 0.3 Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage

transistor 2sc5296

Abstract: 2sc5296 equivalent 2sc5296 SANYO Electric
Contextual Info: Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

SS TRANSISTOR

Abstract: ic shelf life Frequency Control Products transistor 2SC5295 SC-75
Contextual Info: Transistor 2SC5295 Silicon NPN epitaxial planar type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 3 Collector current Collector power dissipation Junction temperature Storage temperature Unit 15 V VCEO 10 V VEBO 2 V 0.75±0.15

2sc5296

Abstract: transistor 2sc5296 TA-0585
Contextual Info: O rd e rin g n u m b e r :E N 5290 _ 2SC5296 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatu re s • High Speed : 1^-= 100ns typ. • High breakdown voltage : Vcbo = 1500V.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Features ■ Package • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob

2SC5299

Abstract: 2SC5299 equivalent 2SC5299 DATASHEET
Contextual Info: SavantIC Semiconductor Product Specification 2SC5299 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications

transistor 2sc5299

Abstract: 2SC5299 equivalent 2SC5299
Contextual Info: Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .

TA0587

Abstract: TA-0587 2SC5298 52923
Contextual Info: Ordering number:EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Package • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob

transistor 2sc5296

Abstract: 2sc5296
Contextual Info: Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .

2SC5296

Abstract: 2SC5296 equivalent equivalent of 2sc5296 equivalent 2sc5296
Contextual Info: SavantIC Semiconductor Product Specification 2SC5296 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications

2SC5297

Abstract: 2SC5297 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SC5297 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications

2SC5297

Contextual Info: Inchange Semiconductor Product Specification 2SC5297 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High breakdown voltage, high reliability. ・High speed APPLICATIONS ・Ultrahigh-definition CRT display ・Horizontal deflection output applications

GDED417

Contextual Info: I Ordering num ber: EN 5291 2SC5297 No.5291 NPN Triple Diffused Planar Silicon Transistor SA iYO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications i F e a tu re s • High S peed: t,. = 100ns typ. • High breakdown voltage : V cbo = 1500V.

2039C-TO3PML

Abstract: 2SC5298 TRANSISTOR NPN 8A 800V
Contextual Info: Ordering number : EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High Speed : tf=100ns typ. • High Breakdown voltage : VCBO=1500V. • High reliability Adoption of HVP process .

transistor 2sc5297

Abstract: 2SC5297 52914
Contextual Info: Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .

2SC5295J

Abstract: SC-89 2SC529
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For 2 GHz band low-noise amplification 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)

2SC5291

Abstract: ITR08045 ITR08046 ITR08047 ITR08048 ITR08049
Contextual Info: Ordering number : ENN5282A 2SC5291 NPN Epitaxial Planar Silicon Transistor 2SC5291 High-Voltage Switching Applications Features • • • • Package Dimensions Adoption of FBET, MBIT processes. Large current capacity. Can be provided in taping. 9.5mm onboard mounting height.