2SC6026MFV Search Results

2SC6026MFV Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723

2SC6026MFV Price and Stock

Filter by Manufacturer


Toshiba America Electronic Components 2SC6026MFV-Y,L3F TRANS NPN 50V 0.15A VESM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	2SC6026MFV-Y,L3F	Cut Tape	21,700		1	1 $0.17 10 $0.102 100 $0.0628 1000 $0.04002 10000 $0.0353	Buy Now
	2SC6026MFV-Y,L3F	Digi-Reel	21,700		1	1 $0.17 10 $0.102 100 $0.0628 1000 $0.04002 10000 $0.0353	Buy Now
	2SC6026MFV-Y,L3F	Reel	8,000		8,000	1 - 10 - 100 - 1000 - 10000 $0.02711	Buy Now
Avnet Americas	2SC6026MFV-Y,L3F	Reel		12 Weeks	8,000	1 - 10 - 100 - 1000 - 10000 $0.01547	Buy Now
Mouser Electronics	2SC6026MFV-Y,L3F		21,516			1 $0.16 10 $0.099 100 $0.061 1000 $0.034 10000 $0.022	Buy Now
Vyrian	2SC6026MFV-Y,L3F		22,345			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SC6026MFVGR,L3F TRANS NPN 50V 0.15A VESM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	2SC6026MFVGR,L3F	Cut Tape	19,058		1	1 $0.18 10 $0.113 100 $0.0697 1000 $0.04457 10000 $0.03937	Buy Now
	2SC6026MFVGR,L3F	Digi-Reel	19,058		1	1 $0.18 10 $0.113 100 $0.0697 1000 $0.04457 10000 $0.03937	Buy Now
	2SC6026MFVGR,L3F	Reel	8,000		8,000	1 - 10 - 100 - 1000 - 10000 $0.03034	Buy Now
Avnet Americas	2SC6026MFVGR,L3F	Reel		12 Weeks	8,000	1 - 10 - 100 - 1000 - 10000 $0.01785	Buy Now
Mouser Electronics	2SC6026MFVGR,L3F					1 $0.18 10 $0.109 100 $0.068 1000 $0.039 10000 $0.025	Get Quote
Toshiba America Electronic Components 2SC6026MFVGR,L3F(T Trans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SC6026MFVGR,L3F(T		8,160		1,954	1 - 10 - 100 - 1000 - 10000 $0.0356	Buy Now
Toshiba America Electronic Components 2SC6026MFV-Y,L3F(B 2SC6026MFV-Y,L3F(B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SC6026MFV-Y,L3F(B		8,000		1,667	1 - 10 - 100 - 1000 - 10000 $0.0414	Buy Now
Quest Components	2SC6026MFV-Y,L3F(B		6,400			1 $0.24 10 $0.24 100 $0.24 1000 $0.072 10000 $0.048	Buy Now
Vyrian	2SC6026MFV-Y,L3F(B		23,944			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SC6026MFVGR,L3F(B 2SC6026MFVGR,L3F(B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SC6026MFVGR,L3F(B		7,674		2,381	1 - 10 - 100 - 1000 - 10000 $0.029	Buy Now
Quest Components	2SC6026MFVGR,L3F(B		6,139			1 $0.17 10 $0.17 100 $0.0765 1000 $0.051 10000 $0.051	Buy Now

Find more 2SC6026MFV price and stock on Findchips.com

2SC6026MFV Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC6026MFV	Toshiba	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	Original	PDF	256.83KB	4
2SC6026MFV-GR	Toshiba	2SC6026 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	146.43KB	4
2SC6026MFVGR,L3F	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 50V 0.15A VESM	Original	PDF	162.23KB
2SC6026MFV-GR(TPL3	Toshiba	2SC6026 - Bipolar Transistors 150mA 50V	Original	PDF	146.43KB	4
2SC6026MFV-Y	Toshiba	2SC6026 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	146.43KB	4
2SC6026MFV-Y,L3F	Toshiba America Electronic Components	NPN TRANSISTOR VCEO50V IC0.15A H	Original	PDF	166.33KB
2SC6026MFV-Y(TPL3)	Toshiba	2SC6026 - Bipolar Transistors 150mA 50V	Original	PDF	146.43KB	4

2SC6026MFV Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2SC6026MFV 2SA2154MFV	PDF
2SA2154MFV Abstract: 2SC6026MFV Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV	PDF
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.4 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 1 0.8 ± 0.05 1.2 ± 0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA2154MFV 2SC6026MFV	PDF
2SA2154MFV Abstract: 2SC6026MFV Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV	PDF
2SA2154MFV Abstract: 2SC6026MFV 2SA21 Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV 2SA21	PDF
transistor marking hy Abstract: 2SA2154MFV 2SC6026MFV PCT 245 Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications High voltage and high current • Complementary to 2SA2154MFV • Lead (Pb) - free 1.2 ± 0.05 : hFE = 120~400 3 Unit Collector-base voltage	Original	2SC6026MFV 2SA2154MFV transistor marking hy 2SA2154MFV 2SC6026MFV PCT 245	PDF
2SA2154MFV Abstract: 2SC6026MFV Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV	PDF
2SA2154MFV Abstract: 2SC6026MFV Contextual Info: 2SC6026MFV シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC6026MFV 単位 : mm 0.22±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) • 電流増幅率が高い。 • hFE リニアリティが優れています。	Original	2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV	PDF
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2SA2154MFV 2SC6026MFV	PDF
2SA2154MFV Abstract: 2SC6026MFV Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV	PDF
2SA2154MFV Abstract: 2SA21 2SC6026MFV 21l1A 2sc602 Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2SA2154MFV 2SC6026MFV 2SA2154MFV 2SA21 2SC6026MFV 21l1A 2sc602	PDF
Contextual Info: Reliability Tests Report Product Name: 2SC6026MFV Package Name: VESM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s	Original	2SC6026MFV	PDF
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983	PDF
SSM3J307T Abstract: SSM3J328R SSM3J334R Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R	PDF

IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2SA2154MFV Abstract: 2SC6026MFV Contextual Info: 2SA2154MFV シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA2154MFV 単位 : mm 0.22±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) • 電流増幅率が高い。 • hFE リニアリティが優れています。	Original	2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV	PDF
TPCA8030 Abstract: lm2804 TPCA8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 Contextual Info: 製品カタログ 2009-9 東芝半導体製品カタログ汎用小信号面実装対応素子（トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S	Original	TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA8030 lm2804 TPCA8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558	PDF
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124	PDF
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram	PDF
45F122 Abstract: GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322 Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 45F122 GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322	PDF

2SC6026MFV Search Results

2SC6026MFV Result Highlights (1)

2SC6026MFV Price and Stock

Toshiba America Electronic Components 2SC6026MFV-Y,L3F

Toshiba America Electronic Components 2SC6026MFVGR,L3F

Toshiba America Electronic Components 2SC6026MFVGR,L3F(T

Toshiba America Electronic Components 2SC6026MFV-Y,L3F(B

Toshiba America Electronic Components 2SC6026MFVGR,L3F(B

2SC6026MFV Datasheets (7)

2SC6026MFV Datasheets Context Search

2SA2154MFV

2SA2154MFV

2SA2154MFV

transistor marking hy

2SA2154MFV

2SA2154MFV

2SA2154MFV

2SA2154MFV

lm2804

SSM3J307T

IGBT GT30F124

GT30F124

transistor bc 245

2SA2154MFV

TPCA*8030

GT45F122

GT30J124

*45F122