2SD11 Search Results

2SB863

Abstract: 2SD1148
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB863 o POWER AMPLIFIER APPLICATIONS. Unit in mm 159 M AX. 0O.2ÌO.2 FEATURES: . Complementary to 2SD1148 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL

MARKING AB

Abstract: 2SD1101
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SD1101 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low Frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

2SD1196

Contextual Info: Inchange Semiconductor Product Specification 2SD1196 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain. ・High current capacity and wide ASO. ・Low saturation voltage ・DARLINGTON APPLICATIONS ・Motor drivers, printer hammer drivers,

2SD1158

Contextual Info: Inchange Semiconductor Product Specification 2SD1158 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High speed switching ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·Solid state relay

2SD1197

Contextual Info: Product Specification www.jmnic.com 2SD1197 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. APPLICATIONS ・Motor drivers, printer hammer drivers, relay

2SD1148

Abstract: 2SB863 equivalent 2sb863 hfe1
Contextual Info: Inchange Semiconductor Product Specification 2SD1148 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SB863 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

vebo

Abstract: 2SD1119
Contextual Info: Transistors SMD Type Silicon NPN epitaxial planar type 2SD1119 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol

transistor Ic 1A datasheet

Abstract: transistor Ic 1A datasheet NPN 2SB857 2SD1133
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION •Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE sat = 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857

2SB886

Abstract: 2SD1196 ITR08
Contextual Info: Ordering number:ENN928C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB886/2SD1196 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2010C [2SB886/2SD1196]

2SB863

Abstract: 2sd1148
Contextual Info: SavantIC Semiconductor Product Specification 2SB863 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SD1148 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

2SD1185

Contextual Info: SavantIC Semiconductor Product Specification 2SD1185 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SD1163

Abstract: 2SD1163A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1163,2SD1163A Silicon NPN Power Transistors DESCRIPTION h TO-220 package •Low collector saturation voltage ·Wit APPLICATIONS ·TV horizontal deflection output, PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SD1159

Contextual Info: SavantIC Semiconductor Product Specification 2SD1159 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package APPLICATIONS ·TV horizontal deflection output, ·High-current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SD1189F

Abstract: 2SB891F
Contextual Info: SavantIC Semiconductor Product Specification 2SB891F Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD1189F ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN

2SB891F

Abstract: 2SD1189F
Contextual Info: Inchange Semiconductor Product Specification 2SB891F Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SD1189F ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN

2SB861

Abstract: transistor 2sD1138 2sB861 transistor TV power transistor datasheet transistor2sb861 2SD1138 low power pnp SILICON PNP POWER TRANSISTOR
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB861 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1138 APPLICATIONS ·Developed for low frequency power amplifier color TV

Contextual Info: TOSHIBA -CDISCRETE/OPTOï 9Q97250 TOSHIBA ~5b Ï>e | TCHTHSO 0007fiñl H 0TÖ8L ' 56C DISCRETE/OPTO r o y T-33-35 SILICON NPN TRIPLE DIFFUSED MESA TYPE _ (DARLINGTON POWER)_ 2SD1166 Unit in ram HIGH POWER SWITCHING APPLICATION AC & DC MOTOR CONTROL APPLICATION

Contextual Info: 2SD1140 TO SHIBA TO SHIBA TRANSISTOR 2 S D 1 140 SILICON NPN EPITAXIAL TYPE PCT PROCESS (D ARLING TO N) MICRO M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS. Unit in mm SW ITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hjTE = 4000 (Min.)

Contextual Info: 2SD1126 K Silicon NPN Triple Diffused HITACHI Application Power switching Outline T O -2 2 0 A B 2SD1126(K) Absolute Maximum Ratings (Ta = 25 °C) Item Sym bol Ratings Unit Collector to base voltage ^G B G 120 V Collector to em itter voltage VCE0 120 V Emitter to base voltage

Contextual Info: 2SD1127 K Silicon NPN Triple Diffused HITACHI Application Power switching Outline T O -2 2 0 A B 2SD1127(K) Absolute Maximum Ratings (Ta = 25 °C) Item Sym bol Ratings Unit Collector to base voltage ^GBG 120 V Collector to em itter voltage VCE0 120 V Emitter to base voltage

Contextual Info: 2SB955 K Silicon PNP Triple Diffused HITACHI Application Power switching complementary pair with 2SD1126(K) Outline TO -220AB 2 Q 1 O1. Base 2. Collector (Flange) 3. Emitter c L ^W V - -W v 1.0 kß 200 Q. (Typ) (Typ) Q l' 2SB955ÇK) Absolute Maximum Ratings (Ta = 25 °C)

2SD118

Abstract: 2SD1187
Contextual Info: 2SD1187 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 187 Unit in mm HIGH POWER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS • SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 100 80 5 10 2 80 150 -5 5 -1 5 0

2sb405

Abstract: 2SD78 2SD67 circuit 2SB405 2SD78A 2SD74 2SB22 2SD88A 2SD82 2Sd92
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD11 25 15 300 150 85 2SD12 75 4 2.5A 60W(Tc=25ºC) 150 2SD13 35 4 10A 100W(Tc=25ºC) 150 2SD14 75 4 10A 100W(Tc=25ºC) 150 2SD15 60 6 6A 80W(Tc=25ºC) 150 2SD16 100

2SD1188

Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150