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    2SD13 Search Results

    2SD13 Result Highlights (5)

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    2SD1306NETR-E Renesas Electronics Corporation Small Signal Bipolar Transistors, MPAK, / Visit Renesas Electronics Corporation
    2SD1306NETL-E Renesas Electronics Corporation Small Signal Bipolar Transistors, MPAK, / Visit Renesas Electronics Corporation
    2SD1306NDTL-E Renesas Electronics Corporation Small Signal Bipolar Transistors, MPAK, / Visit Renesas Electronics Corporation
    2SD1306NDTR-E Renesas Electronics Corporation Small Signal Bipolar Transistors, MPAK, / Visit Renesas Electronics Corporation
    2SD1368CBTL-E Renesas Electronics Corporation Small Signal Bipolar Transistors, UPAK, / Visit Renesas Electronics Corporation
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    2SD13 Price and Stock

    ROHM Semiconductor 2SD1383KT146B

    TRANS NPN DARL 32V 0.3A SMT3
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    DigiKey 2SD1383KT146B Digi-Reel 2,440 1
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    2SD1383KT146B Reel 3,000
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    Mouser Electronics 2SD1383KT146B 3,062
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    Verical 2SD1383KT146B 5,900 348
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    2SD1383KT146B 2,987 216
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    Newark 2SD1383KT146B Cut Tape 2,784 5
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    RS 2SD1383KT146B Bulk 30
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    TME 2SD1383KT146B 2,870 1
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    Ameya Holding Limited 2SD1383KT146B 100 1
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    Chip1Stop 2SD1383KT146B Cut Tape 2,987
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    CoreStaff Co Ltd 2SD1383KT146B 6,000
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    2SD1383KT146B 535
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    New Advantage Corporation 2SD1383KT146B 2,354 1
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    Samtec Inc MTMM-130-02-S-D-130

    2MM TERMINAL STRIP
    Free Sample
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    DigiKey MTMM-130-02-S-D-130 Bulk 64 1
    • 1 $12.38
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    Mouser Electronics MTMM-130-02-S-D-130
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    Newark MTMM-130-02-S-D-130 Bulk 90 1
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    Powell Electronics MTMM-130-02-S-D-130 59 1
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    Master Electronics MTMM-130-02-S-D-130
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    Panasonic Electronic Components 2SD13020RA

    TRANS NPN 20V 0.5A TO92-B1
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    DigiKey 2SD13020RA Ammo Pack 3,000
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    JRH Electronics SMM-111-02-S-D-13-P

    CONN RCPT 22POS 0.079 GOLD SMD
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    DigiKey SMM-111-02-S-D-13-P Tube 1
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    Samtec Inc SMM-111-02-S-D-13-P

    CONN RCPT 22POS 0.079 GOLD SMD
    Free Sample
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    DigiKey SMM-111-02-S-D-13-P Tube 26
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    Newark SMM-111-02-S-D-13-P Bulk 1
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    Powell Electronics SMM-111-02-S-D-13-P 71 1
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    Master Electronics SMM-111-02-S-D-13-P
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    Sager SMM-111-02-S-D-13-P 107 1
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    2SD13 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD13 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD13 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD13 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD13 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD13 Unknown Cross Reference Datasheet Scan PDF
    2SD13 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD13 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD13 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD13 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD13 Unknown Vintage Transistor Datasheets Scan PDF
    2SD13 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD130 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD130 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD130 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD130 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD130 Unknown Transistor Replacements Scan PDF
    2SD130 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD130 Unknown Cross Reference Datasheet Scan PDF
    2SD130 Unknown Transistor Replacements Scan PDF
    2SD130 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    ...

    2SD13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1376

    Abstract: Darlington NPN Silicon Diode npn 100v 1.5a 2SB1012
    Text: Inchange Semiconductor Product Specification 2SD1376 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·DARLINGTON ·Complement to type 2SB1012 APPLICATIONS ·For low frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION


    Original     		PDF 2SD1376 O-126 2SB1012 2SD1376 Darlington NPN Silicon Diode npn 100v 1.5a 2SB1012

    2SB989

    Abstract: 2SD1352 3PF8 tc2530
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1352 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 APPLICATIONS ·Designed for general purpose application


    Original     		PDF 2SD1352 2SB989 2SB989 2SD1352 3PF8 tc2530

    2SD1399

    Abstract: NPN 800V
    Text: Inchange Semiconductor Product Specification 2SD1399 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For horizontal output applications PINNING PIN


    Original     		PDF 2SD1399 2SD1399 NPN 800V

    2sd1314

    Abstract: 2-21F1A 2Sd13
    Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications Unit: mm • High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)


    Original     		PDF 2SD1314 2sd1314 2-21F1A 2Sd13

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SD1366A SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Low frequency power amplifier 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃


    Original     		PDF 2SD1366A OT-89 500mA

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1368 Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO


    Original     		PDF 2SD1368

    2SD1398

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD1398 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For TV and CRT display horizontal output applications


    Original     		PDF 2SD1398 200mA; 2SD1398

    2SB1002

    Abstract: 2SD1368 2SD789 Mark CA DSA003638
    Text: 2SD1368 Silicon NPN Epitaxial ADE-208-1148 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1002 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SD1368 ADE-208-1148 2SB1002 2SB1002 2SD1368 2SD789 Mark CA DSA003638

    2SB1001

    Abstract: 2SD1367 DSA003638
    Text: 2SD1367 Silicon NPN Epitaxial ADE-208-1147 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SD1367 ADE-208-1147 2SB1001 2SB1001 2SD1367 DSA003638

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 25 V Collector-emitter voltage (Base open) VCEO 20 V Peak collector current


    Original     		PDF 2SD1330

    2sb405

    Abstract: 2SD78 2SD67 circuit 2SB405 2SD78A 2SD74 2SB22 2SD88A 2SD82 2Sd92
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD11 25 15 300 150 85 2SD12 75 4 2.5A 60W(Tc=25ºC) 150 2SD13 35 4 10A 100W(Tc=25ºC) 150 2SD14 75 4 10A 100W(Tc=25ºC) 150 2SD15 60 6 6A 80W(Tc=25ºC) 150 2SD16 100


    Original     		PDF 2SD11 2SD12 2SD13 2SD14 2SD15 2SD16 2SD17 2SD18 2SD19 2SD20 2sb405 2SD78 2SD67 circuit 2SB405 2SD78A 2SD74 2SB22 2SD88A 2SD82 2Sd92

    Hitachi DSA001650

    Abstract: No abstract text available
    Text: 2SB1012 K Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 ID 5 kΩ (Typ) 1 kΩ (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25°C) Item


    Original     		PDF 2SB1012 2SD1376 O-126 D-85622 Hitachi DSA001650

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SD1395]


    Original     		PDF EN1221C 2SD1395 2010C 2SD1395]

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon NPN Epitaxial 2SD1367 Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO


    Original     		PDF 2SD1367

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1313 INDUSTRIAL APPLICATIONS Unit in n HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATU R E S : . High Power Dissipation : . High Collector Current : . High Speed Switching : . Low Saturation Voltage :


    OCR Scan     		PDF 2SD1313 20/is

    2SD1353

    Abstract: No abstract text available
    Text: St TOS HIBA { D I S C R E T E /O PT O } DEjTD^SSG 00D7clia □ | 56C 90972 50 TOSH IBA <DI SCRETE/OPTO 07918 D T- 2SD1353 S IL IC O N NPN T R IP L E D IF F U SE D TYPE_ AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: Unit in mm " l a 3 MAX


    OCR Scan     		PDF 00D7clia 2SD1353

    RA5E

    Abstract: 2SD131 2SD1316
    Text: Power Transistors 2SD1316 2SD1316 Package Dim ensions Unit . mm , Silicon NPN Triple-D iffused Planar Darlington Type 3.7max l. lm a x . Medium Speed Power Sw itching j • Features • • • • • 30V Z en er diode built -in b e tw e e n C and B Very sm all fluctuation in breakdow n vo ltag es


    OCR Scan     		PDF 2SD1316 2SD131Ã RA5E 2SD131 2SD1316

    2SD133

    Abstract: 2SD1336 2SD1336A 2sd darlington panasonic 2SD Scans-001793
    Text: Power Transistors 2SP 1336.2SD 1336A bT32fl52 G01b?].2 3bb • g g 2SD1336, 2SD1336A ■ Package Dim ensions Silicon NPN Triple-Diffused Planar Darlington Type Power Switching ■ Features • High speed switching • Good linearity of DC current gain I i f e


    OCR Scan     		PDF d01b7 2spi336, 2sdi33Ã 2SD1336 2SD1336A p2SD1336A 100X2mm 100x100 DDlb713 2SD133 2sd darlington panasonic 2SD Scans-001793

    2SD1318

    Abstract: 30v ZENER DIODE
    Text: Power Transistors 2SD1318 2SD1318 Package Dim ensions Silicon NPN Triple-D iffused Planar D arlington Type M edium Speed Power Sw itching • Features • 30V Z e n e r d iode b uilt-in b e tw e e n C and B • V ery sm all flu ctu atio n in b reak d o w n v o ltag es


    OCR Scan     		PDF 2SD1318 2SD1318 30v ZENER DIODE

    2SD1325

    Abstract: No abstract text available
    Text: Power Transistors 2SD1325 2SD 1325 Package D im ensions Unit ! mm 4.4m ax. 10.2m ax. Silicon NPN Triple-D iffused Planar Darlington Type 2 9max M edium Speed Pow er S w itching • Features 0 3 .1 + 0.1 • 6 0 V Z e n e r d iod e built-in b e tw e e n C and B


    OCR Scan     		PDF 2SD1325 b132fiS5 D01b707 2SD1325

    trf 510 transistor

    Abstract: trf 510 2SD1319
    Text: Power Transistors 2SD1319 ^=332*152 a a i b b T 4 s i o 2SD1319 Package D im ensions Unit : mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max 1. lmax 8.7 max. 6.5 max. M edium Speed Power S w itching I* *1 _D • Features • • • • • 60V Zener diode built-in between C and B


    OCR Scan     		PDF 2SD1319 bT32052 DDltt15 trf 510 transistor trf 510 2SD1319

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)


    OCR Scan     		PDF 2SD1314 VCC-300V

    nec 2sc3157

    Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
    Text: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419


    OCR Scan     		PDF 2SD1660 2SD1198A 2SD1198A 2SD1622 2SD1631 2SC2883 2SD1406 2SC3299 2SD1412 2SD1296 nec 2sc3157 2SD999 2SD1317 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678

    2SD2334

    Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
    Text: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187


    OCR Scan     		PDF 2SD2174 2SD2175 2SD2176 2SD2177 2SD2185 2SD2186 2SD2187 2SD2188 2SD2189 2SD2190 2SD2334 2sc4814 2SD2076 2216y 2SD1546 2SD1930 2SD1755 2sc2562 2SC4062