2SD143 Search Results

2SD1433

Contextual Info: 2SD1433 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES: . High Voltage : V^go=1500V . Low Saturation Voltage : vCE sat =5V (Max.) (IC=6A, Ib =1.2A) . High Speed : tf=1.0/js (Max.) . Glass Passivated Collector-Base Junction

2SD1430

Contextual Info: 2SD1430 SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATU RES: . High Voltage : VCB0=1500V . Low Saturation Voltage : V C E sat =4V (Typ.) (XC=3A, IB=0.8A) . High Speed : tf=1.0*is (Max.) (IcP=3A, Ijji (end)= 0. 8A) . Glass Passivated Collector-Base Junction

2SD1427

Abstract: S2000A S2000
Contextual Info: 12 T0-3P(H) (BS) —3 O PACKAGE SERIES n; M CD > Application •c HOR. OUT * V CES Typo No. (Built-in Damper) 2SD1425 S2056 2.5 2.5 (V) 1500 *1500 3.5 2SD1426 (Built in Damper) S2054 2SD1431 (Built-in Damper) (Built-in Damper) (Built-in Damper) T G-25°C

2SD1432

Contextual Info: Inchange Semiconductor Product Specification 2SD1432 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in TV and CRT display horizontal output applications

2SD1431

Abstract: NPN Transistor 1500V
Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1431 COLOR TV HORIZONTAL OUTPUT APPLICATIONS No Damper Diode ! ! 2-16D3A High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (TA=25oC) Characteristic Collector-Base Voltage

2sd1439

Abstract: IC2A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1439 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

2SB1031

Abstract: 2SD1435 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1435 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type 2SB1031 APPLICATIONS ·For low frequency power amplifier and high current switching applications

2SB1031

Abstract: 2SD1435
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -8A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1435 APPLICATIONS

Contextual Info: 2SD1436 K Silicon NPN Triple Diffused HITACHI Application Power switching complementary pair with 2SB1032(K) Outline TO -3P 2SD1436ÇK) Absolute Maximum Ratings (Ta = 25 °C) Item Sym bol Rating Unit Collector to base voltage ^G B G 120 V Collector to em itter voltage

Contextual Info: TOSHIBA { DIS CR ET E/ OPT O} 9097250 TOSHIBA ~5t DÎ^jTOTTSSD 0007170 1 |"~ 5òc 07970 DISCRETE/OPTO o r - 3 a-)3 2SD1430 SILICON NPNTRIPLE DIFFUSED M ESA TYPE Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0 Z . 6 ± O .2 la O M A X . FEATURES: . High Voltage : V q b o =^500V

3PH DRIVER IC

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1433 Features • • NPN Silicon Power Transistors With TO-3PH package Horizontal deflection output driver Maximum Ratings Symbol V CEO

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

2SB1033

Abstract: 2SD1437
Contextual Info: 2SB1033 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD1437 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

Contextual Info: 2SD1436 K Silicon NPN Triple Diffused HITACHI Application Power switching complementary pair with 2SB1032(K) Outline TO -3P 2SD1436(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage

Hitachi DSA00276

Contextual Info: 2SD1436 K Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 1.5 kΩ (Typ) 130 Ω (Typ) 3 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol

Hitachi DSA00389

Abstract: 2SB1032 2SD1436 80-W 2sB103 C2540
Contextual Info: 2SD1436 K Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 1.5 kΩ (Typ) 130 Ω (Typ) 3 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol

2SC3482

Abstract: 2SD1432 QQQT172
Contextual Info: ~5fa DEI^DTTaSO□□□7c57a | TOSHIBA-CDISCRETE/OPTO> 9097250 TOSHIBA 5 5t>C CDI S C R E T E /O P T O 0 7 972 OT -3 V 1 3 2SD1432 S IL IC O N NPN T R IP L E D IF F U SE D M E SA TYPE Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 1 6 0 M A X ». ^3.6 ± Q 2

2SB1033

Abstract: 2SD1437
Contextual Info: Inchange Semiconductor Product Specification 2SB1033 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1437 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2sd1431

Contextual Info: Inchange Semiconductor Product Specification 2SD1431 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV and CRT display horizontal output applications

transistor 2A

Abstract: 2SD1439
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1439 DESCRIPTION •High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in horizontal deflection circuits of

2sd1436

Abstract: Hitachi DSA00279
Contextual Info: 2SD1436 K Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline 2SD1436(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120

2SD1437

Abstract: 2SB1033 2sB103
Contextual Info: K ~7> V 7 $ / I ransistors 2SD1437 2SD1437 H M i S f f c 7 ° U - ^ N P N '> U = ]> h 7>'sZ$ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • W F 2 T h ill/D im en s io n s U n it: mm ~ 1) V C E ( s a t ) = 0 . 3 V ( T y p . ) “ “ (at Ic / I b = 2 A /0 .2 A )

2SD1433

Abstract: VCE-800V
Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1433 COLOR TV HORIZONTAL OUTPUT APPLICATIONS No Damper Diode ! High Collector-Base Voltage(VCBO=1500V) ! High Speed Switching 2-16D3A ABSOLUTE MAXIMUM RATINGS (TA=25oC) Characteristic Collector-Base Voltage

2SD1431

Contextual Info: SavantIC Semiconductor Product Specification 2SD1431 Silicon NPN Power Transistors DESCRIPTION •With TO-3PH package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV and CRT display horizontal output applications