2SB1019
Abstract: 2SD1412
Text: JMnic Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1412 APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN DESCRIPTION
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2SB1019
O-220Fa
2SD1412
O-220Fa)
2SB1019
2SD1412
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2SD1412A
Abstract: No abstract text available
Text: 2SD1412A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications • Unit: mm Low saturation voltage: VCE sat = 0.4 V (max) at IC = 4 A Absolute Maximum Ratings (Tc = 25°C) Characteristics
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2SD1412A
2-10R1A
2SD1412A
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2SB1019
Abstract: 2SD1412
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1019 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1412 APPLICATIONS ·High current switching applications.
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2SB1019
2SD1412
2SB1019
2SD1412
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2SB1019
Abstract: 2SD1412
Text: SavantIC Semiconductor Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING
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2SB1019
O-220Fa
2SD1412
O-220Fa)
2SB1019
2SD1412
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2SB1019
Abstract: 2sb101 2SD1412
Text: Inchange Semiconductor Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1412 APPLICATIONS ・High current switching applications ・Power amplifier applications
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2SB1019
O-220Fa
2SD1412
O-220Fa)
2SB1019
2sb101
2SD1412
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transistor
Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N
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2SD1160
2SD1140
2SD1224
2SD1508
2SD1631
2SD1784
2SD2481
2SB907
2SD1222
2SD1412A
transistor
power transistor npn to-220
PNP POWER TRANSISTOR TO220
transistor PNP
damper diode
Darlington transistor
2SD2206A
power transistor
npn darlington
transistor TO220
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D1412A
Abstract: 2SD1412A D1412
Text: 2SD1412A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications • Unit: mm Low saturation voltage: VCE sat = 0.4 V (max) at IC = 4 A Maximum Ratings (Tc = 25°C) Characteristics Symbol
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2SD1412A
2-10R1A
D1412A
2SD1412A
D1412
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D1412A
Abstract: 2SD1412A d1412
Text: 2SD1412A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications • Unit: mm Low saturation voltage: VCE sat = 0.4 V (max) at IC = 4 A Absolute Maximum Ratings (Tc = 25°C) Characteristics
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2SD1412A
D1412A
2SD1412A
d1412
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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nec 2sc3157
Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Text: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419
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2SD1660
2SD1198A
2SD1198A
2SD1622
2SD1631
2SC2883
2SD1406
2SC3299
2SD1412
2SD1296
nec 2sc3157
2SD999
2SD1317
2sc3694
2SC3760
2SD2061
2sd2239
nec 1678
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4336
Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
Text: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329
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2SC4324
2SC4325
2SC4326
2SC4327
2SC4328
2SC4329
2SC4330
2SC4095
2SC4871
2SC3142
4336
2SC4846
2SD1634
4339
2SC3303
2SC3346
4327
2SC2735
2SC2847
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2SD1412
Abstract: 2SB1019 nhjt
Text: TOSHIBA { D I S C R E T E / O P T 0> 9097250 TOSHIBA ~SÍ 56C { D ISCRETE/O PTO DE I ^ O T T E S O DOCmSM 07954 2SD1412 SILICON NPN TRIPLE DIFFUSEDTYPE Unit in tnm HIGH CURRENT SWITCHING APPLICATIONS.' POWER AMPLIFIER APPLICATIONS. FEATURES: IQ 3H A X .
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2SD1412
2SB1019
c1Dc17ESD
nhjt
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ic 353
Abstract: IC353
Text: 2SB1019 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS U nit in mm HIGH C U R R E N T SW ITC H IN G A PPLICA TIO N S. P O W E R AMPLIFIER A PP LIC A TIO N S. • • ? Low Collector Saturation Voltage : v CE sat = -0.4V (Max.) at Ic = -4 A Complementary to 2SD1412
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2SB1019
2SD1412
ic 353
IC353
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Untitled
Abstract: No abstract text available
Text: 2SD1412 SILICON NPN TRIPLE DIFFUSED TYP E INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX. POWER AMPLIFIER APPLICATIONS. 03.2±O. 2 FEATURES: . Low Saturation Voltage : VcE sat =0-4V(Max.) U s at Ic=4A . Complementary to 2SB1019
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2SD1412
2SB1019
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2SD1412A
Abstract: No abstract text available
Text: T O S H IB A 2SD1412A T O SH IBA TRANSISTO R SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 4 1 2A HIGH CURRENT SW ITCH ING APPLICATIO NS PO W ER AM PLIFIER APPLICATIO NS Low Saturation Voltage : sat = 0.4V (Max.) at Iq = 4A INDUSTRIAL APPLICATIONS Unit in mm
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2SD1412A
2SD1412A
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2SD1412A
Abstract: No abstract text available
Text: TO SH IBA 2SD1412A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 4 1 2A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS 10 ± 0.3 Low Saturation Voltage * V c e sat = Collector-Base Voltage
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2SD1412A
2SD1412A
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g3je
Abstract: 2SB1019
Text: y 'j 3 >PNP=M fôf$ pcTM o -f 7f 2SB1019 ym > if I - o P ? v m títfjíh 3 3 : IC = - 7 A ? lä io a i± ^ 'ig ;^ 0 : VcE(sat) = - 0 .4 V ( f t *) ( I C = -4A ) 2SD1412 t 3 > 7 " 'J ^ > ? >; (; 4- 19 £ - f 0 ft*Æ :fê (T a = 25°C) Il 3 L' 5 3 •^ - X Psi m a
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2SB1019
2SD14121
2-10L1A
-50mA,
20//s
g3je
2SB1019
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1412A 2 S D 1 4 1 2A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 ^3.2 ±0.2 2.7Ì0.2 Low Saturation Voltage : V^E s a t = 0-4V (Max.) at I0 = 4A
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2SD1412A
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2SB1019
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1019 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1Q.3MAX, POWER AMPLIFIER APPLICATIONS. FEATURES: . Low Collector Saturation Voltage : VCE sat =-0.4V(Max.) at I c =-4A . Complementary to 2SD1412
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2SB1019
2SD1412
2SB1019
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2SD1412
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1412 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1Q3MAX. POWER AMPLIFIER APPLICATIONS. 03.2±Q2 FEATURES: . Low Saturation Voltage : VcE sat = 0 •4 V ( M a x .) at Ic=4A . Complementary to 2SB1019
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2SD1412
2SB1019
Q76-Q
2SD1412
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Untitled
Abstract: No abstract text available
Text: TOSHIBA nnuD A T O SH IBA TRANSISTOR 2SD1412A SILICON PNP TRIPLE DIFFUSED TYPE mm mmr u m m m HIGH CURRENT SW ITCHING APPLICATIONS POW ER AM PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm £Y J'L .2 ±0 .2 10 ± 0.3 Low Saturation Voltage : V ç e §at = 0.4V (Max.) at Iç = 4A
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2SD1412A
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2SD1412A
Abstract: laf 001
Text: TO SH IBA 2SD1412A TOSHIBA TRANSISTOR 2 S SILICON NPN TRIPLE DIFFUSED TYPE D 1 4 1 2 A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS r 10 ±0.3 ^3.2 ± 0.2 -5 y < of ml ÍY^ • 1.1 MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC
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2SD1412A
2SD1412A
laf 001
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b1375
Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39
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2N3713
2N3714
2N3715
2N3716
2N3789
2N3790
2N3791
2N3792
2N4340
2N4340S
b1375
2sk270a
2SK150A
MG15G1AL2
2SA1051b
MG50G2CL1
mg100g1al2
2SA1015
A1265N
MG100G1AL1
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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