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    2SD1620 Search Results

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    2SD1620 Price and Stock

    onsemi 2SD1620-TD-E

    TRANS NPN 10V 3A PCP
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    DigiKey 2SD1620-TD-E Cut Tape 2,194 1
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    Mouser Electronics 2SD1620-TD-E 2,310
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    Rochester Electronics 2SD1620-TD-E 2,700 1
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    2SD1620 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1620 Kexin NPN Epitaxial Planar Silicon Transistor Original PDF
    2SD1620 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF
    2SD1620 TY Semiconductor NPN Epitaxial Planar Silicon Transistor - SOT-89 Original PDF
    2SD1620 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1620 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1620 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1620 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1620 Sanyo Semiconductor PCP (Power Chip Pack) Transistor Scan PDF
    2SD1620 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SD1620 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SD1620-TDD-E On Semiconductor 2SD1620 - Strobe (1.5 V, 3.0 V max) Original PDF
    2SD1620-TD-E On Semiconductor 2SD1620 - Strobe (1.5 V, 3.0 V max) Original PDF

    2SD1620 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SD1620 Ordering number : EN1719C SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features • • • • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted.


    Original
    PDF 2SD1620 EN1719C

    2SD1620

    Abstract: transistor smd br
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1620 Features Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low


    Original
    PDF 2SD1620 2SD1620 transistor smd br

    Untitled

    Abstract: No abstract text available
    Text: 2SD1620 Ordering number : EN1719D SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted Large current capacity and highly resistant to breakdown


    Original
    PDF EN1719D 2SD1620

    2SD1620

    Abstract: No abstract text available
    Text: Ordering number:EN1719B NPN Epitaxial Planar Silicon Transistor 2SD1620 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2038A [2SD1620] 4.5 1.6 2.5 1.5 0.4 0.5 3 1.5 2 4.25max • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted.


    Original
    PDF EN1719B 2SD1620 2SD1620] 25max 2SD1620

    2SD1620

    Abstract: ITR09987 ITR09988 ITR09989
    Text: 2SD1620 Ordering number : EN1719C SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features • • • • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted.


    Original
    PDF 2SD1620 EN1719C 2SD1620 ITR09987 ITR09988 ITR09989

    2SD1620

    Abstract: ITR09987 ITR09988 ITR09989 ITR09990 ITR09991
    Text: Ordering number:ENN1719B NPN Epitaxial Planar Silicon Transistor 2SD1620 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2038A [2SD1620] 4.5 1.6 1.5 2.5 4.25max • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted.


    Original
    PDF ENN1719B 2SD1620 2SD1620] 25max 2SD1620 ITR09987 ITR09988 ITR09989 ITR09990 ITR09991

    Untitled

    Abstract: No abstract text available
    Text: 2SD1620 Ordering number : EN1719C SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features • • • • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted.


    Original
    PDF 2SD1620 EN1719C

    2sd1620

    Abstract: No abstract text available
    Text: Ordering number : EN1719D 2SD1620 Bipolar Transistor 10V, 3A, Low VCE sat , NPN Single PCP http://onsemi.com Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted Large current capacity and highly resistant to breakdown


    Original
    PDF EN1719D 2SD1620 2sd1620

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1620 Features Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low


    Original
    PDF 2SD1620

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    2sc6096

    Abstract: 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S
    Text: Low-Saturation Voltage Transistors Shortform Table Surfacemount Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ■ Packages Quick selection guide Road Map Application Example Lineup according to packages


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    PDF ECSP1208-4-F 12A01M 15C01M 12A01C 15C01C 12A02CH 15C02CH 30A02CH 30C02CH 2sc6096 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S

    BX-1457

    Abstract: k 1457 2SD1620 FP304 SB0703C
    Text: Ordering number:EN4926 FP304 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Features Package Dimensions • Complex type with an NPN transistor and a Schottoky barrier diode facilitating high-density mounting. · The FP304 is composed of 2 chips, one being


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    PDF EN4926 FP304 FP304 2SD1620 SB0703C, FP304] BX-1457 k 1457 SB0703C

    2SD1620

    Abstract: FP304 ITR11110 ITR11111 ITR11112 ITR11113 N4926
    Text: 注文コード No. N 4 9 2 6 FP304 No. N4926 O3000 半導体ニューズ No.3962 とさしかえてください。 FP304 特長 TR : NPN エピタキシァルプレーナ形シリコントランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用


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    PDF FP304 N4926 O3000 FP304 2SD1620 SB07-03C 250mm2 ITR11121 ITR11122 2SD1620 ITR11110 ITR11111 ITR11112 ITR11113 N4926

    CPH3120

    Abstract: LB8632V SSOP20 SSOP-20
    Text: Ordering number : ENN5161C Monolithic Digital IC LB8632V Low-Voltage/Low-Saturation Camera Motor Driver Overview The LB8632V is a general-purpose camera motor driver IC that supports low-saturation output and low-voltage drive and thus can be used in a wide range of applications.


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    PDF ENN5161C LB8632V LB8632V CPH3120 SSOP20 SSOP-20

    2SD1620

    Abstract: No abstract text available
    Text: Ordering num ber:ENÌ719B N0.1719B _ 2SD1620 NPN Epitaxial Planar Silicon Transistor sa u y o i 1.5V, 3V Strobe Applications F e a tu re s •Less power dissipation because of low VcE sat » permitting more flashes of light to be emitted. ■Large current capacity and highly resistant to breakdown.


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    PDF 1719B l719B 2SD1620

    BX-1457

    Abstract: No abstract text available
    Text: Ordering number: EN 4926 No.4926 SAiYO i FP304 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC-DC Converter F eatu res • Complex type w ith an NPN transistor and a Schottky barrier diode facilitating high-density mounting. • The FP304 is composed of 2 chips, one being equivalent to the 2SD1620 and the other the SB07-03C,


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    PDF FP304 FP304 2SD1620 SB07-03C, 250mm2X BX-1457

    Untitled

    Abstract: No abstract text available
    Text: O rd e rin g n u m b er: EN 1719A _ 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features . Less power dissipation because of low vc E s a t ’ light to be emitted. Pe r m itting more flashes of . Large current capacity and highly resistant to breakdown.


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    PDF 2SD1620 5277KI/3045MW

    2SC3444

    Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
    Text: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4


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    PDF 2SD1586 2SD1587 2SD1588 2SD1589 2SD1590 2SD1592 2SD1593 25D1594 2SD1595 2SD1598 2SC3444 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1932 2sd1944

    2SB1205

    Abstract: 2SD1801
    Text: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.


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    PDF T0-126LP MT95C123TR 2SB1205 2SD1801

    transistor b985

    Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
    Text: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.


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    PDF 250mm! 2SA1882/2SC4984 2SB1118/2SD1618 2SB1119/2SD1619 2SB1120 2SD1620 2SB1121/2SD1621 2SB1122/2SD1622 2SB1123/2SD1623 2SB1124/2SD1624 transistor b985 transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892

    2SC3498

    Abstract: 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295
    Text: - tt Type No. E S Manuf. ft SANYO m Ä 3E TOSHIBA NEC B ±L HITACHI Ä ± ü FUJITSU T MATSUSHITA 2SC 3432 B m. 2SC4161 ZSU356Z • ’ SC2739 2SC 3433 a m 2SC4162 2SC3562 2SC3871 2 SC 3434 b m 2SC4423 2SC3306 2SC3210 2SC 3435 / B » 2SC4424 2SC3498 2SC 3436


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    PDF 2SC3432 2SC3433 2SC3434 2SC3435 2SC3436 2SC3437 2SC3438 2SC3439 2SC3440 2SC3441 2SC3498 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


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    PDF TQ220ML T0220ML T03PB 2SB1205 2S81119 2Sk222 2sa128

    mosfet k 2038

    Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
    Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB


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    PDF 2SK2170 2SK1068 2SK1069 2SK1332 2SK2219 2SK303 2SK545 2SK771 mosfet k 2038 TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155