250MM2X Search Results

Contextual Info: RN5001 RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER A M PLIFIER APPLICATIONS. P O W ER SW IT C H IN G APPLICATIONS. J53= 1.7MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process

IC JRC circuits

Contextual Info: 2SC4705 No.3484 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications High hpg A p p licatio n s • Low-frequency general-purpose amp, drivers, m uting circuits Features • High DC current gain (hpE = 800 to 3200) • Low collector-to-emitter saturation voltage : Vce (sat)S 0.5V max

ic power 22E

Abstract: power 22E IC 12E MARKING
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : 1.6MAX 4.6 MAX. . Low Noise Figure, High Gain. 0.4±a05 1.7MAX. . N F = 1 .ldB, IS21e l2=9.5dB f=lGHz MAXI M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC

Contextual Info: SILICON NPN EPITAXIAL TYPE RN5003 Unit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. P O W ER SW ITCH IN G APPLICATIONS. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: O r d e rin g n u m b e r : E N 4 4 9 4 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransistors SAXYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PN P transistor and an NPN tran sisto r in one package, facilitating high-density

Contextual Info: 2SK1724 LD L o w D rive S eries 2062 V 0 ss —3 0 V N Channel Power M OSFET E.3BI9 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss Gate to Source Voltage

2097a

Contextual Info: O rdering number :E N 4 5 3 6 SA\YO j No.4536 ¡j_ _ FP209 NPN Epitaxial Planar Silicon Transistor Driver Applications F eatu res • Composite type with 2 transistors NPN contained in one package,facilitating

AX8896

Contextual Info: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage

Contextual Info: SILICON NPN EPITAXIAL TYPE RN5002 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. i f 6 MAX- PO W ER SW IT C H IN G APPLICATIONS. 0 .4 ± 0 .05 1.7 MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process

EN4539

Abstract: SB0703C
Contextual Info: I Ordering number:EN4539 _ FP301 TR : NPN Epitaxial Planar Silicon Transistor No.4539 SMÊYO SBD : Schottky B arrier Diode i DC/DC Converter Applications F eatures • Composite type with 2 devices NPN transistor and Schottky barrier diode contained in one package,

2088a

Contextual Info: Ordering number : EN 3 9 6 1 A N 0 .3 9 6 1 A II_ FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky B arrier Diode SAiYO DC/DC Converter Applications F e a tu re s • Composite type with a PNP transistor and a Schottky barrier diode contained in one package,

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2873 Unit in tmn POWER AMPLIFIER APPLICATIONS. 1.6MAX. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. r a Q4±Û05 - FEATURES: . Low Saturation Voltage : VCE sat =0.5V(Max.) (Ic-IA) + Q08 Q45-Û05 . High Speed Switching Time : tstg=l.Oa s (Typ.)

8897

Contextual Info: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage

Contextual Info: O rd e rin g n u m b e r : EN 3 1 7 5 2SB1325/2SD1999 No.3175 S A \Y O PNP/NPN Epitaxial Planar Silicon Transistors i Compact Motor Driver Applications F e a tu re s • Low saturation voltage •Contains diode between collector and em itter • Contains bias resistance between base and em itter

marking DK

Abstract: 2SD1628
Contextual Info: Ordering number:EN1781A _ 2SD1628 N0.1781A NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drivers. Features . Low saturation voltage.

Contextual Info: Ordering number:EN3509A P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ187] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5

Contextual Info: Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. • Ultrahigh-speed switching. unit: mm 2062A-PCP • Low-voltage drive 2.5V drive . [2SK2316] 1 : Gate 2 : Drain

2SA1969

Contextual Info: Ordering number:EN5O90 N o.5098 SA IVO i 2 S A 1 9 6 9 II PNP Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier, MediumCurrent Ultrahigh-Speed Switching Applications F eatu res • HighÍT{ÍT = l-7G H ztyp . • Large current capacity Ic = —400mA).

2SA1204

Abstract: 2SC2884 SA12
Contextual Info: T O S H IB A 2SA 1204 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 12 0 4 AUDIO FREQUENCY AM PLIFIER APPLICATIONS High DC Current Gain : 1i f = 100~320 e Suitable for Output Stage of 1 W atts Amplifier P q = 1~2W (Mounted on Ceram ic Substrate)

2SA1202

Abstract: 2SC2882
Contextual Info: T O S H IB A 2SA1202 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER AM PLIFIER APPLICATIONS Unit in mm VOLTAGE AM PLIFIER APPLICATIONS 1.6MAX. —I— 4.6MAX. • Suitable for driver of 30~35 Watts Audio Amplifier • P q = 1~2W (Mounted on CeramicSubstrate)

2SD1620

Contextual Info: Ordering num ber:ENÌ719B N0.1719B _ 2SD1620 NPN Epitaxial Planar Silicon Transistor sa u y o i 1.5V, 3V Strobe Applications F e a tu re s •Less power dissipation because of low VcE sat » permitting more flashes of light to be emitted. ■Large current capacity and highly resistant to breakdown.

dg transistor smd

Abstract: 2SD1624 SMD MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR 2SD1624
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1624 Features Low collector-to-emitter saturation voltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage

smd marking DA

Abstract: marking da 2SD1618 DA SMD SMD BR 08 DA marking
Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SD1618 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

2SD1621

Abstract: SMD TRANSISTOR MARKING Dd smd transistor 560
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1621 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity,