2SD1859 Search Results

2Sb1238

Abstract: 2SB1189 2SD1767 2SD1859 T100 ic T100 bd marking code transistor ROHM
Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5

Contextual Info: Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F 96-618-B13 (96-750-D13) 278

Contextual Info: /Transistors 2SD1226M/2SD1859 2 S D 1226M Xtf^Jr'>7;U7°U-/^NPN '>V□> O C n ifiR Q iO O if 4 , ^ i i [liff l/M e d iu m Pow er A m p. Epitaxial Planar NPN S ilico n Transistors • « * • W B \H ± IS I/D im e n s io n s U n it: mm) 1) P c = 1 W f c * # ( , '„

2SD1659

Abstract: 2SB689F 2sb123b
Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors I Medium Power Transistor —80V, —0.7A 2 S B 1 189 / 2 S B 1 238 / 2 S B 8 8 9 F •F e a tu re s • A b s o lu t e m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage and high current. (—80V, - 0.7A)

transistor 2sb1238

Abstract: 2sb1238
Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5

2SD1859

Abstract: 2SB1189 2SB1238 2SD1767 T100 sc621
Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO

2SD1859

Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO

2SD1859

Abstract: 2SD1767 2SB1189 2SB1238 T100
Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO

SS138

Abstract: 2SB1189 2SB1238 2SB889F 2SB899F 2SD1767 2SD1859 2SB899
Contextual Info: 2SB1189 12SB1238 / 2SB899F 2SD1767 / 2SD1859 12SD1200F T ra n sisto rs I M e d iu m P o w e r T r a n s is t o r — 80V, — 0.7A 2 S B 1 189 / 2S B 1238 / 2S B 889F • A b s o l u t e m a x im u m r a t in g * ( T a — 2 5 ^ ) • F * a tu r* * 1 > H i g h b r e a k d o w n v o t in g o . B V e c o

D1226M

Abstract: D1226 T2721 2SD1226M 2SB1238 2SD1859 251C 2SB910M L0oa 80-V1
Contextual Info: h - 7 > p ' Z £ /Transistors ROHM CO 2SD1226M/2SD1859 LT» MQE D • 7 ö 2 ß ci*:J c] 0 D G S 0 3 Ö 3 H R HM 2SD1226M Xt°^df-vT;U70U-^NPN yU3>h7>y'X^ Power Amp. 2SD1359 Epitaxial Planar NPN Silicon Transistors 7 ^ 2 7 -2 .1 • $ Ä • W F i't'sÉ E i/D im e n sio n s Unit : mm

2sd1226

Abstract: 2SD1859 2SB1238 B1859
Contextual Info: N "7 > v $ /Transistors 2 S D 1 2 2 6 M 2 3 ^ ^ 0 3 0 2SD1226M/2SD1859 '> U 3 > Epitaxial Planar NPN Silicon Transistors /Medium Power Amp. • fl-Jß ^jilS I/D im en sio ns Unit : mm 1) Pc=1W t ± t ^ o 2) ÏB Œ , V Ceo = 80V, lc=700mA 3) 2SB910M /2SB1238<t=l>^'Jc

702 RE

Abstract: transistor 702 2SD1859
Contextual Info: SPICE PARAMETER 2SD1859 by ROHM TR Div. * 2SD1859 NPN BJT model * Date: 2006/11/17 .MODEL 2SD1859 NPN + IS=150.00E-15 + BF=256.16 + VAF=15.861 + IKF=1.3147 + ISE=150.00E-15 + NE=1.3227 + BR=9.2084 + VAR=100 + IKR=.2032 + ISC=16.456E-12 + NC=1.3790 + NK=.77836

2SB1238

Contextual Info: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.5 0.4 1.0 Collector power dissipation

Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)

2sd1767

Abstract: 2SD1859
Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO

2SD1859

Abstract: transistor 2sb1238 2SB1238
Contextual Info: 2SD1859 Transistor, NPN Features Dimensions Units : mm • • • available in ATV TV2 package high power: Pq = 1 W high breakdown voltage and large current capacity: VCEO = 80 V, lc = 700 mA • complementary pair with 2SB1238 Applications • medium power amplifier

2SD1878

Abstract: 2SB1240 2SD1853 2SD1855A 2SD1877 2SD188 2SD1851 2SD1852 2SD1854 2SD1855
Contextual Info: - 270 - <Ta=25"C, *EPÌÌTc=25'C fi <3 & Vq r o V) 2SD1851 2SD1852 2SD1853 2SD1854 2SD1855 2SD1855A 2SD1856 2SD1857 2SD1858 2SD1859 2SD1860 2SD1861 2SD1862 2SD1863 2 SDÌ8 64 2SD1865 2SD1866 2SD1867 2SD1868 2SD1869 2SD1870 2SD1876 2SD1877 2SD1878 2SD1879

2SB1238

Abstract: 2SB1189 2SD1767 2SD1859 T100
Contextual Info: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5 0.4 1.0 VCBO −80 Collector-emitter voltage

B1238

Abstract: 2SB1238 transistor 2sb1238
Contextual Info: 2SB1238 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • high power: Pc = 1 W 2SB1238 (ATVTV2) • high breakdown voltage and large current capacity: V CEO = -80 V, lc = -0.7 A • complementary pair with 2SD1859 Applications

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

2SB909M

Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
Contextual Info: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)